Quantum interference semiconductor device

Claim 2

A quantum interference semiconductor device for producing an output in response to interference of electron waves, comprising: a source region (214) for injecting electrons, a drain region (216) for collecting electrons, passage means (217c) for flowing the injected electrons from the source region to the drain region, and passage dividing means (218, 220, 222) provided in the passage means for dividing the passage means into a first region in contact with the source region and a second region in contact with the drain region by inducing depletion regions (218e, 220e, 222a) in the passage means so as to prohibit the electrons flowing therethrough; characterized in that said passage dividing means having a longitudinal size (L) measured in the direction of flow of electrons from the source region to the drain region to be approximately equal to or smaller than the inelastic and elastic scattering length of electrons, said passage dividing means being constructed such that there are formed a plurality of channels (224, 226) between the depletion regions induced by passage dividing means for passing the electrons from the first region to the second region by dividing each of the electrons into a plurality of electron waves (227) respectively passing through the plurality of channels, said passage dividing means being further constructed such that at least one spot-like channel region (224, 226) is formed in each of the plurality of channels so as to be isolated from each other for passing the electron wave with a predetermined phase shift, each of said spot-like channel regions being bounded by a pair of depletion regions defining the channels with a lateral width (W) measured perpendicularly to the general direction of movement of electrons from the source region to the drain region such that the lateral width is confined approximately equal to or smaller than the de Broglie wavelength of the electrons passing therethrough, and control means (218, 220) for controlling the phase of electron waves passing through at least one of the plurality of spot-like channel regions.

Claim 3

A device as claimed in claim 1 characterized in that each of the spot-like channel regions (224, 226) has a lateral width (W) confined such that a quantum well structure is formed in the spot-like channel region with an energetical separation (ΔE) between adjacent quantum levels (E₀₁, E₀₂) larger than the thermal energy of electrons.

Claim 4

A device as claimed in claim 1 characterized in that said passage means (217c) has a modulation doped structure inducing a two-dimensional electron gas (111a), so that the electrons flow through the passage means in a form of two-dimensional electron gas.

Claim 5

A device as claimed in claim 1 characterized in that said passage dividing means comprises a pair of gate electrodes (218, 220) provided on the passage means so as to face each other in a direction generally perpendicularly to the direction of flow of electrons from the source region to the drain region for inducing the depletion regions (218e, 220e) in the passage means (217c) underneath by making a Schottky contact therewith, and a spot-like surface region (222) provided on the surface of the passage means between the pair of gate electrodes so as to induce another depletion region in the passage means underneath.

Claim 6

A device as claimed in claim 4 characterized in that one of the spot-like channel regions (224) is formed in coincidence to a first channel defined between the depletion region (218e) induced by one of the gate electrodes (218) and the depletion region (222a) induced by the spot-like surface region, and the other of the spot-like regions (226) is formed in coincidence to a second channel defined between the depletion region (220e) induced by the other of the gate electrodes (220) and the depletion region (222a) induced by the spot-like surface region (222).

Claim 7

A device as claimed in claim 4 characterized in that each of the gate electrodes (218, 220) has a sharp-pointed end facing with each other separated by the spot-like surface region (222).

Claim 8

A device as claimed in claim 6 characterized in that said spot-like surface region (222) is located substantially on the line connecting the sharp-pointed ends of the gate electrodes (218, 220).

Claim 9

A device as claimed in claim 6 characterized in that said spot-like surface region (222) is provided at a position offset from the line connecting the sharp-pointed ends of the gate electrodes (316, 318).

Claim 10

A device as claimed in claim 8 characterized in that an additional spot-like channel region (322) is provided between the pair of sharp-pointed ends of the gate electrodes (316, 318).

Claim 11

A device as claimed in claim 4 characterized in that said spot-like surface region (222) on the passage means (217c) is formed by doping.

Claim 12

A device as claimed in claim 7 characterized in that said spot-like surface region (222) has a size of about 0.1 µm or less.

Claim 13

A device as claimed in claim 4 characterized in that one or more of said gate electrodes (218, 220) act also as the control means for controlling the phase of electron waves by controlling the extension of depletion regions (218e, 220e) in the passage means in response to a gate voltage applied thereto.

Claim 14

A device as claimed in claim 12 characterized in that each of said spot-like channel regions (224, 226) induces a phase shift of an even integer multiple of π including zero to the electron wave passing therethrough in response to a first gate voltage applied to the gate electrode (218, 220) and a phase shift of an odd integer multiple of π in response to a second gate voltage.

Claim 15

A device as claimed in claim 1 characterized in that said passage dividing means comprises a region (246) formed on the surface of the passage means by modifying the surface for inducing the depletion regions in the passage means (217c) underneath.

Claim 16

A device as claimed in claim 14 characterized in that said region (246) inducing the depletion regions comprises a groove (246a, 246b, 246c) formed on the surface of the passage means (217c) so as to traverse the passage means with respect to the general direction of movement of electrons from the source region (214) to the drain region (216), with at least a pair of ungrooved regions (254, 256) remained in correspondence to the spot-like channel regions (254a, 256a).

Claim 17

A device as claimed in claim 15 characterized in that a gate electrode (258) is provided as the control means on the groove (246) such that the gate electrode at least covers one of the ungrooved regions (254, 256).

Claim 18

A device as claimed in claim 1 characterized in that said control means comprises magnetic means (268, 270) for applying a magnetic field (B) across the passage means such that the magnetic field passes through the passage means at least at the passage dividing means.

Claim 19

A device as claimed in claim 1 characterized in that the device further comprises an additional passage dividing means (244, 248) for inducing additional depletion regions at at least one of the upstream side and the downstream side of the first passage dividing means with respect to the general direction of flow of electrons from the source region (214) to the drain region (216) so as to prohibit the electrons passing therethrough, said additional passage dividing means defining an additional spot-like channel region (250a, 252a) having a size approximately identical to that of the spot-like channel regions in the plurality of channels with such a relation that the distance from the additional spot-like channel region to one of the plurality of spot-like channel regions (254a, 256a) is identical to the distance from the additional spot-like channel region to the other of the plurality of spot-like channel regions (254a, 256a).

Claim 20

A device as claimed in claim 18 characterized in that said additional spot-like channel region (250a, 252a) is formed in coincidence to an additional channel defined by a pair of depletion regions induced by the additional passage dividing means (244, 248).

Claim 21

A device as claimed in claim 19 characterized in that said additional passage dividing means comprises a pair of gate electrodes (316b, 318b; 316c, 318c) making Schottky contact with the passage means for inducing the additional depletion regions defining the additional spot-like channel region (322, 323).

Claim 22

A device as claimed in claim 19 characterized in that said additional passage dividing means comprises a pair of grooves (244, 248) provided on the surface of the passage means (217c) in correspondence to the pair of depletion regions (250, 252) so as to induce the additional depletion regions in the passage means.

Claim 23

A device as claimed in claim 1 characterized in that said passage dividing means comprises a first gate electrode (408) provided on the passage means at a first lateral side with respect to the flow of electrons from the source region (214) to the drain region (216) and a plurality of other gate electrodes (410, 412) provided on the common passage means at a second lateral side opposite from the first side with respect to the flow of electrons in a manner aligned along the flow of electrons so as to face the first gate electrode, said first gate electrode and said other gate electrodes inducing the depletion regions in the passage means (217c) underneath by making a Schottky contact therewith, said passage dividing means further comprises a surface region (222) provided on the passage means between the first gate electrode and the other gate electrodes for inducing another depletion region in the passage means underneath, said depletion regions induced by the first and other gate electrodes defining the plurality of spot-like channel regions such that one of the spot-like channel regions (416) is formed at the first side with respect to the surface region so as to be defined by the depletion region induced underneath the first gate electrode and the depletion region induced underneath the surface region, and that the other spot-like channel regions (418, 420) are formed at the second side with respect to the surface region consecutively along the flow of electrons between the depletion region induced underneath the surface region and respective depletion regions induced underneath the other gate electrodes.

Claim 24

A device as claimed in claim 22 characterized in that said surface region (222) comprises a spot-like doped region having a diameter of about 0.1 µm or less.

Claim 25

A device as claimed in claim 23 characterized in that said other gate electrodes comprise second and third gate electrodes (410, 412), and said first through third gate electrodes are disposed so as to surround the spot-like doped region (222) with an equal separation.

Claim 26

A device as claimed in claim 24 characterized in that said first through third gate electrodes (408, 410, 412) have a sharp-pointed tip at the end facing the spot-like doped region (222).

Claim 27

A device as claimed in claim 24 in which each of the gate electrodes (408, 410, 412) induces a relative phase shift of zero in the electron wave passing though the corresponding spot-like channel region (416, 418, 420) in response to a first gate voltage while induces a phase shift of an odd integer multiple of π in response to a second gate voltage.

Claim 28

A quantum interference semiconductor device for supplying a current of electrons to selected one of a plurality of outputs as a result of interference of electron waves, characterized by a source region (214) for injecting electrons, a plurality of drain regions (216a, 216b), respectively adapted to be connected to the plurality of outputs and separated from each other, for collecting the electrons injected by the source region, passage means (217c) having a modulation doped structure for passing the electrons from the source region to the plurality of drain regions in a form of two-dimensional electron gas, said passage means having a branched construction comprising a plurality of arms in which one of the arms is connected to the source region and the other arms connected to the plurality of drain regions respectively, passage dividing means (222, 510, 512, 514) provided on the passage means between the arm connected to the source region and the other arms connected to the drain regions, for prohibiting passage of electrons therethrough, said passage dividing means being constructed such that channel means (X1, X2, Y1, Y2) is provided in the passage dividing means for passing the electrons from the arm connected to the source region to the other arms connected to the drain regions, said channel means comprising a plurality of spot-like channel regions (518, 520, 522) for passing the electrons in a form of electron waves with controlled phase shifts, said plurality of spot-like channel regions being disposed in the channel means such that each electron passes through the channel means from the arm connected to the source region to the arm connected to any one of the plurality of drain regions in a form of at least two electron waves travelling along respective paths each including one or more of the spot-like channel regions, and means (510, 512, 514) for controlling the phase shift of the electrons passing through the plurality of spot-like channel regions.

Claim 29

A quantum interference semiconductor device for supplying a current of electrons to selected one of a plurality of outputs as a result of interference of electron waves, characterized by a source region (214) for injecting electrons, a plurality of drain regions (216a, 216b), respectively adapted to be connected to the plurality of outputs and separated from each other, for collecting the electrons injected by the source region, passage means (217c) having a modulation doped structure for passing the electrons from the source region to the plurality of drain regions in a form of two-dimensional electron gas, said passage means having a branched construction comprising a plurality of arms in which one of the arms is connected to the source region and the other arms connected to the plurality of drain regions respectively, passage dividing means (222, 510, 512, 514) provided on the passage means between the arm connected to the source region and the other arms connected to the drain regions, for prohibiting passage of electrons therethrough, said passage dividing means being constructed such that channel means (X1, X2, Y1, Y2) is provided in the passage dividing means for passing the electrons from the arm connected to the source region to the other arms connected to the drain regions, said channel means comprising a plurality of spot-like channel regions (518, 520, 522) for passing the electrons in a form of electron waves with controlled phase shifts, said plurality of spot-like channel regions being disposed in the channel means such that each electron passes through the channel means from the arm connected to the source region to the arm connected to any one of the plurality of drain regions in a form of at least two electron waves travelling along respective paths each including one or more of the spot-like channel regions, and means (510, 512, 514) for controlling the phase shift of the electrons passing through the plurality of spot-like channel regions.

Claim 30

A device as claimed in claim 27 characterized in that said passage dividing means comprises a plurality of gate electrodes (510, 512, 514) provided on the passage means such that two gate electrodes invade into respective arms from both sides thereof at the portion of the passage means where it is branched into the plurality of arms, with such a configuration that hypothetical extensions of the plurality of gate electrodes intersect with each other at a point in the part of the passage means where the passage means is branched, said plurality of gate electrodes inducing depletion regions in the passage means by making a Schottky contact therewith, and a spot-like surface region (222) provided on the passage means in correspondence to the point where the hypothetical extension of the gate electrodes intersect each other, for inducing a depletion region in the passage means underneath, each of said plurality of channel regions (518, 520, 522) being defined by one of the depletion regions induced by the corresponding gate electrode and the depletion region induced by the spot-like surface region.

Claim 31

A device as claimed in claim 28 characterized in that said means for controlling the phase shift comprises the gate electrodes (510, 512, 514) which control the extension of the depletion regions induced underneath in response to gate voltages applied thereon.

Claim 32

A device as claimed in claim 28 characterized in that the number of drain regions (216a, 216b) is two, the number of arms connected to the plurality of drain regions is two, one of the paths (X2, Y2) of the electron wave through the channel means includes two spot-like channel regions, and the other path (X1, Y1) includes one spot-like channel region.

Claim 33

A device as claimed in claim 30 characterized in that each of the spot-like channel regions (518, 520, 522) in the channel means (X1, X2, Y1, Y2) induces a phase shift of zero in the electron wave passing therethrough in a first state and an odd integer multiple of π to the electron waves passing therethrough in a second state.

Claim 34

A device as claimed in claim 27 characterized in that the number of drain regions (216a, 216b, 216c) is three, the number of arms connected to the plurality of drain regions is three, one of the paths (X2, Y2) of the electron wave through the channel means includes three spot-like channel regions, and the other path (X1, Y1) includes one spot-like channel region.

Claim 35

A device as claimed in claim 32 characterized in that each of the spot-like channel regions (618, 620, 622, 623) in the channel means induces a phase shift of zero in the electron wave passing therethrough in a first state and an odd integer multiple of π /2 to the electron waves passing therethrough in a second state.

Claim 36

A quantum interference semiconductor device for supplying current of electrons from a plurality of input terminals to a plurality of output terminals along respective and selected paths by establishing the selected paths as a result of interference of electron waves, characterized by a plurality of source regions (214a, 214b) separated from each other and adapted to be connected to input terminals for injecting electrons, a plurality of drain regions (216a, 216b) separated from each other and adapted to be connected to the plurality of outputs for collecting the electrons injected by the source region, passage means (217c) having a modulation doped structure for passing the electrons from the plurality of source region to the plurality of drain regions in a form of two-dimensional electron gas, said passage means having a branched construction comprising a plurality of arms in which a first group of arms are connected to the source region and second group of arms connected to the plurality of drain regions respectively, passage dividing means (222, 610, 612, 614, 615) provided on the passage means between the arms connected to the source region and the arms connected to the drain regions, for prohibiting passage of electrons therethrough, said passage dividing means being constructed such that channel means (X1, X2, Y1, Y2, Z1, Z2, W1, W2) is provided in the passage dividing means for passing the electrons from the arms connected to the plurality of source region to the arms connected to the drain regions, said channel means comprising a plurality of spot-like channel regions (618, 620, 622, 623) for passing the electrons in a form of electron waves with controlled phase shifts, said plurality of spot-like channel regions being disposed in the channel means such that each electron passes through the channel means from one of the arms connected to one of the source regions to the arm connected to any one of the plurality of drain regions in a form of at least two electron waves travelling along respective paths each including one or more of the spot-like channel regions, and means (610, 612, 614, 615) for controlling the phase shift of the electrons passing through the plurality of spot-like channel regions.

Claim 37

A quantum interference semiconductor device for supplying current of electrons from a plurality of input terminals to a plurality of output terminals along respective and selected paths by establishing the selected paths as a result of interference of electron waves, characterized by a plurality of source regions (214a, 214b) separated from each other and adapted to be connected to input terminals for injecting electrons, a plurality of drain regions (216a, 216b) separated from each other and adapted to be connected to the plurality of outputs for collecting the electrons injected by the source region, passage means (217c) having a modulation doped structure for passing the electrons from the plurality of source region to the plurality of drain regions in a form of two-dimensional electron gas, said passage means having a branched construction comprising a plurality of arms in which a first group of arms are connected to the source region and second group of arms connected to the plurality of drain regions respectively, passage dividing means (222, 610, 612, 614, 615) provided on the passage means between the arms connected to the source region and the arms connected to the drain regions, for prohibiting passage of electrons therethrough, said passage dividing means being constructed such that channel means (X1, X2, Y1, Y2, Z1, Z2, W1, W2) is provided in the passage dividing means for passing the electrons from the arms connected to the plurality of source region to the arms connected to the drain regions, said channel means comprising a plurality of spot-like channel regions (618, 620, 622, 623) for passing the electrons in a form of electron waves with controlled phase shifts, said plurality of spot-like channel regions being disposed in the channel means such that each electron passes through the channel means from one of the arms connected to one of the source regions to the arm connected to any one of the plurality of drain regions in a form of at least two electron waves travelling along respective paths each including one or more of the spot-like channel regions, and means (610, 612, 614, 615) for controlling the phase shift of the electrons passing through the plurality of spot-like channel regions.

Claim 38

A half-adder for adding binary input data, characterized by first and second quantum interference semiconductor devices (400a, 400b), each comprising a source electrode (214, 214′) adapted to be connected to a voltage source, a drain electrode (216, 216′) adapted to be connected to an output terminal, passage means (217c, 217c′) provided between the source electrode and the drain electrode for passing a flow of electrons from the source electrode to the drain electrode, elongated passage dividing means (414, 414′) provided on the passage means at an intermediate position between the source electrode and the drain electrode so as to extend along the flow of electrons for a length comparable to or smaller than the elastic and inelastic scattering length of electrons in the passage means, said passage dividing means inducing a correspondingly elongated central depletion region in the passage means for dividing each of the electrons flowing through the passage means into a first electron wave propagating along a first path (X1, Y1) at a first side of the passage dividing means and a second electron wave propagating along a second path (X2, Y2) at a second side opposite from the first side of the passage dividing means, a first gate electrode (408, 408′) provided on the passage means at the first side with respect to the passage dividing means for inducing a first depletion region in the passage means as a result of Schottky contact such that a first spot-like channel region (416, 416′) is defined between the depletion region and the elongated central depletion region with a size approximately equal to or smaller than the de Broglie wavelength of the electrons passing therethrough, second and third gate electrodes (410, 412) provided on the passage means at the second side with respect to the passage dividing means consecutively along the direction of flow of electrons for inducing respective depletion regions in the passage means as a result of Schottky contact, said second and third gate electrodes defining second and third spot-like channel regions (418, 420, 418′, 420′) between the depletion regions corresponding to the second and third gate electrodes and the depletion region induced underneath the elongated passage dividing means such that the second and third spot-like channel regions are aligned consecutively along the second path of the electron wave, each of said second and third gate electrodes being adapted to be supplied with the input data and changes the extension of the depletion region in response thereto, wherein each of the second and third gate electrodes of the first quantum interference semiconductor device is connected electrically to corresponding second and third gate electrodes of the second quantum interference semiconductor device, and wherein the first through third gate electrodes of the first and second quantum interference semiconductor devices are configured such that the spot-like channel regions formed in the first quantum interference semiconductor device have a longitudinal length, measured in the direction of flow of electrons from the source region to the drain region, twice as large as that of the spot-like channel regions formed in the second quantum interference semiconductor device and such that the electron wave passing through each of the second and third spot-like channel regions in the first quantum interference semiconductor device experiences a relative phase shift of zero with respect to the electron wave passing through the first spot-like channel region of the same first quantum interference semiconductor device when the binary input data at the second and third gate electrodes is in a first state while experiences a relative phase shift of π when the binary input data is in a second state, and that the electron wave passing through each of the second and third spot-like channel regions in the second quantum interference semiconductor device experiences a phase shift of zero with respect to the electron wave passing through the first spot-like channel region of the same second quantum interference semiconductor device when the binary input data at the second and third gate electrode is in the first state while experiences a relative phase shift of π /2 in response to the second state of the binary input data, whereby a result of sum of the input data at the second and third gate electrodes is obtained at the drain of the first quantum interference semiconductor device and a carry produced by the sum operation is obtained at the drain of the second quantum interference semiconductor device.

Claim 39

A half-adder for adding binary input data, characterized by first and second quantum interference semiconductor devices (400a, 400b), each comprising a source electrode (214, 214′) adapted to be connected to a voltage source, a drain electrode (216, 216′) adapted to be connected to an output terminal, passage means (217c, 217c′) provided between the source electrode and the drain electrode for passing a flow of electrons from the source electrode to the drain electrode, elongated passage dividing means (414, 414′) provided on the passage means at an intermediate position between the source electrode and the drain electrode so as to extend along the flow of electrons for a length comparable to or smaller than the elastic and inelastic scattering length of electrons in the passage means, said passage dividing means inducing a correspondingly elongated central depletion region in the passage means for dividing each of the electrons flowing through the passage means into a first electron wave propagating along a first path (X1, Y1) at a first side of the passage dividing means and a second electron wave propagating along a second path (X2, Y2) at a second side opposite from the first side of the passage dividing means, a first gate electrode (408, 408′) provided on the passage means at the first side with respect to the passage dividing means for inducing a first depletion region in the passage means as a result of Schottky contact such that a first spot-like channel region (416, 416′) is defined between the depletion region and the elongated central depletion region with a size approximately equal to or smaller than the de Broglie wavelength of the electrons passing therethrough, second and third gate electrodes (410, 412) provided on the passage means at the second side with respect to the passage dividing means consecutively along the direction of flow of electrons for inducing respective depletion regions in the passage means as a result of Schottky contact, said second and third gate electrodes defining second and third spot-like channel regions (418, 420, 418′, 420′) between the depletion regions corresponding to the second and third gate electrodes and the depletion region induced underneath the elongated passage dividing means such that the second and third spot-like channel regions are aligned consecutively along the second path of the electron wave, each of said second and third gate electrodes being adapted to be supplied with the input data and changes the extension of the depletion region in response thereto, wherein each of the second and third gate electrodes of the first quantum interference semiconductor device is connected electrically to corresponding second and third gate electrodes of the second quantum interference semiconductor device, and wherein the first through third gate electrodes of the first and second quantum interference semiconductor devices are configured such that the spot-like channel regions formed in the first quantum interference semiconductor device have a longitudinal length, measured in the direction of flow of electrons from the source region to the drain region, twice as large as that of the spot-like channel regions formed in the second quantum interference semiconductor device and such that the electron wave passing through each of the second and third spot-like channel regions in the first quantum interference semiconductor device experiences a relative phase shift of zero with respect to the electron wave passing through the first spot-like channel region of the same first quantum interference semiconductor device when the binary input data at the second and third gate electrodes is in a first state while experiences a relative phase shift of π when the binary input data is in a second state, and that the electron wave passing through each of the second and third spot-like channel regions in the second quantum interference semiconductor device experiences a phase shift of zero with respect to the electron wave passing through the first spot-like channel region of the same second quantum interference semiconductor device when the binary input data at the second and third gate electrode is in the first state while experiences a relative phase shift of π /2 in response to the second state of the binary input data, whereby a result of sum of the input data at the second and third gate electrodes is obtained at the drain of the first quantum interference semiconductor device and a carry produced by the sum operation is obtained at the drain of the second quantum interference semiconductor device.

Claim 40

A half-adder as claimed in claim 35 characterized in that each of the second and third gate electrodes (410, 412) has an edge facing the second and third spot-like channel regions (418′, 420′) in the first quantum interference semiconductor device (400b) which is twice as large as an edge of the second and third gate electrodes of the second quantum interference semiconductor device (400a) facing the second and third spot-like channel regions (418, 420) formed therein.

Claim 41

A full-adder for adding binary input data, characterized by first and second quantum interference semiconductor devices (400c, 400d), each comprising a source electrode (214, 214′) adapted to be connected to a voltage source, a drain electrode (216, 216′) adapted to be connected to an output terminal, passage means (217c, 217c′) provided between the source electrode and the drain electrode for passing a flow of electrons from the source electrode to the drain electrode, elongated passage dividing means (414) provided on the passage means at an intermediate position between the source electrode and the drain electrode so as to extend along the flow of electrons for a length comparable to or smaller than the elastic and inelastic scattering length of electrons in the passage means, said passage dividing means inducing a correspondingly elongated central depletion region in the passage means for dividing each of the electrons flowing through the passage means into a first electron wave propagating along a first path at a first side of the passage dividing means and a second electron wave propagating along a second path at a second side opposite from the first side of the passage dividing means, a first gate electrode (408, 408′) provided on the passage means at the first side with respect to the passage dividing means for inducing a first depletion region in the passage means as a result of Schottky contact such that a first spot-like channel region (416, 416′) is defined between the depletion region and the elongated central depletion region with a size approximately equal to or smaller than the de Broglie wavelength of the electrons passing therethrough, second through fourth gate electrodes (410, 412, 462) provided on the passage means at the second side with respect to the passage dividing means consecutively along the direction of flow of electrons for inducing respective depletion regions in the passage means as a result of Schottky contact, said second through fourth gate electrodes defining second through fourth spot-like channel regions (418, 420, 464, 418′, 420′, 464′) between the depletion regions corresponding to the second through fourth gate electrodes and the depletion region induced underneath the elongated passage dividing means such that the second through fourth spot-like channel regions are aligned consecutively along the second path of the electron wave, each of said second through fourth gate electrodes being adapted to be supplied with the binary input data and changes the extension of the depletion region in response thereto, wherein each of the second through fourth gate electrodes of the first quantum interference semiconductor device is connected electrically to corresponding second through fourth gate electrodes of the second quantum interference semiconductor device, and wherein the first through fourth gate electrodes of the first and second quantum interference semiconductor devices are configured such that the spot-like channel regions formed in the first quantum interference semiconductor device have a longitudinal length, measured in the direction of flow of electrons from the source region to the drain region, three times as large as that of the spot-like channel regions formed in the second quantum interference semiconductor device and such that the electron wave passing through each of the second through fourth spot-like channel regions in the first quantum interference semiconductor device experiences a relative phase shift of zero with respect to the electron wave passing through the first spot-like channel region in the same first quantum interference semiconductor device when the binary input data at the second through third gate electrodes is in a first state while experiences a relative phase shift of π /3 when the binary input data is in a second state, and that the electron wave passing through each of the second through fourth spot-like channel regions in the second quantum interference semiconductor device experiences a phase shift of zero with respect to the electron wave passing through the first spot-like channel region of the same second quantum interference semiconductor device when the binary input data at the second through fourth gate electrode is in the first state while experiences a relative phase shift of π /3 in response to the second state of the binary input data, whereby a result of sum of the input data at the second and third gate electrodes is obtained at the drain of the first quantum interference semiconductor device and a carry produced by the sum operation is obtained at the drain of the second quantum interference semiconductor device.

Claim 42

A full-adder for adding binary input data, characterized by first and second quantum interference semiconductor devices (400c, 400d), each comprising a source electrode (214, 214′) adapted to be connected to a voltage source, a drain electrode (216, 216′) adapted to be connected to an output terminal, passage means (217c, 217c′) provided between the source electrode and the drain electrode for passing a flow of electrons from the source electrode to the drain electrode, elongated passage dividing means (414) provided on the passage means at an intermediate position between the source electrode and the drain electrode so as to extend along the flow of electrons for a length comparable to or smaller than the elastic and inelastic scattering length of electrons in the passage means, said passage dividing means inducing a correspondingly elongated central depletion region in the passage means for dividing each of the electrons flowing through the passage means into a first electron wave propagating along a first path at a first side of the passage dividing means and a second electron wave propagating along a second path at a second side opposite from the first side of the passage dividing means, a first gate electrode (408, 408′) provided on the passage means at the first side with respect to the passage dividing means for inducing a first depletion region in the passage means as a result of Schottky contact such that a first spot-like channel region (416, 416′) is defined between the depletion region and the elongated central depletion region with a size approximately equal to or smaller than the de Broglie wavelength of the electrons passing therethrough, second through fourth gate electrodes (410, 412, 462) provided on the passage means at the second side with respect to the passage dividing means consecutively along the direction of flow of electrons for inducing respective depletion regions in the passage means as a result of Schottky contact, said second through fourth gate electrodes defining second through fourth spot-like channel regions (418, 420, 464, 418′, 420′, 464′) between the depletion regions corresponding to the second through fourth gate electrodes and the depletion region induced underneath the elongated passage dividing means such that the second through fourth spot-like channel regions are aligned consecutively along the second path of the electron wave, each of said second through fourth gate electrodes being adapted to be supplied with the binary input data and changes the extension of the depletion region in response thereto, wherein each of the second through fourth gate electrodes of the first quantum interference semiconductor device is connected electrically to corresponding second through fourth gate electrodes of the second quantum interference semiconductor device, and wherein the first through fourth gate electrodes of the first and second quantum interference semiconductor devices are configured such that the spot-like channel regions formed in the first quantum interference semiconductor device have a longitudinal length, measured in the direction of flow of electrons from the source region to the drain region, three times as large as that of the spot-like channel regions formed in the second quantum interference semiconductor device and such that the electron wave passing through each of the second through fourth spot-like channel regions in the first quantum interference semiconductor device experiences a relative phase shift of zero with respect to the electron wave passing through the first spot-like channel region in the same first quantum interference semiconductor device when the binary input data at the second through third gate electrodes is in a first state while experiences a relative phase shift of π /3 when the binary input data is in a second state, and that the electron wave passing through each of the second through fourth spot-like channel regions in the second quantum interference semiconductor device experiences a phase shift of zero with respect to the electron wave passing through the first spot-like channel region of the same second quantum interference semiconductor device when the binary input data at the second through fourth gate electrode is in the first state while experiences a relative phase shift of π /3 in response to the second state of the binary input data, whereby a result of sum of the input data at the second and third gate electrodes is obtained at the drain of the first quantum interference semiconductor device and a carry produced by the sum operation is obtained at the drain of the second quantum interference semiconductor device.

Claim 43

A full-adder as claimed in claim 37 chacaterized in that each of the second through fourth gate electrodes (410, 412, 462) has an edge facing the second and third spot-like channel regions in the first quantum interference semiconductor device (400d) which is three as large as an edge of the second and third gate electrodes of the second quantum interference semiconductor device (400c) facing the second and third spot-like channel regions formed therein.

Claim 44

An inverter, characterized by a quantum interference semiconductor device, which in turn comprises a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in a correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of splitted electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the gate electrode is connected to an input terminal for receiving an input signal, the first drain connected to a voltage source via a first resistor, the second drain connected to the voltage source via a second resistor, and the first and second drains connected to respective output terminals providing the input signal with inversion and without inversion.

Claim 45

An inverter, characterized by a quantum interference semiconductor device, which in turn comprises a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in a correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of splitted electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the gate electrode is connected to an input terminal for receiving an input signal, the first drain connected to a voltage source via a first resistor, the second drain connected to the voltage source via a second resistor, and the first and second drains connected to respective output terminals providing the input signal with inversion and without inversion.

Claim 46

A logic device for a logic operation of input signals, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of split electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the gate electrode of a first device is connected to a first input terminal for receiving an input signal, the source of the first device connected to the ground, the first drain of the first device connected to a voltage source via a first resistor, the second drain of the first device connected to the source of a second device, the first drain of the second device connected to the voltage source via the first resistor, the second drain of the second device connected to the voltage source via the second resister, the gate electrode of the second device connected to a second input terminal for receiving another input signal, the first drains of the first and second devices are connected to a first output terminal providing an AND output of the input signals to the first an second input terminals, and the second drain connected to a second output terminal providing a NAND output of the input signals.

Claim 47

A logic device for a logic operation of input signals, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of split electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the gate electrode of a first device is connected to a first input terminal for receiving an input signal, the source of the first device connected to the ground, the first drain of the first device connected to a voltage source via a first resistor, the second drain of the first device connected to the source of a second device, the first drain of the second device connected to the voltage source via the first resistor, the second drain of the second device connected to the voltage source via the second resister, the gate electrode of the second device connected to a second input terminal for receiving another input signal, the first drains of the first and second devices are connected to a first output terminal providing an AND output of the input signals to the first an second input terminals, and the second drain connected to a second output terminal providing a NAND output of the input signals.

Claim 48

A logic device for performing a logic operation of input signals, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of splitted electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the gate electrode of the first device connected to a first input terminal for receiving an input signal, the first drain of the first device connected to the source of a second device, the second drain of the first device connected to a voltage source via a first resister, the second drain of the second device connected to the voltage source commonly to the second drain of the first device via the first resistor, the gate electrode of the second device connected to a second input terminal for receiving another input signal, the first drain of the second device connected the voltage source via a second resister, and the first and second drains of the second device respectively connected to a first output terminal providing a NOR output of the input signals and a second output terminal providing an OR output of the input signals.

Claim 49

A logic device for performing a logic operation of input signals, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of splitted electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the gate electrode of the first device connected to a first input terminal for receiving an input signal, the first drain of the first device connected to the source of a second device, the second drain of the first device connected to a voltage source via a first resister, the second drain of the second device connected to the voltage source commonly to the second drain of the first device via the first resistor, the gate electrode of the second device connected to a second input terminal for receiving another input signal, the first drain of the second device connected the voltage source via a second resister, and the first and second drains of the second device respectively connected to a first output terminal providing a NOR output of the input signals and a second output terminal providing an OR output of the input signals.

Claim 50

A logic device for performing a logic operation of input signals, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of splitted electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the gate electrode of the first device connected to a first input terminal for receiving an input signal, the first drain of the first device connected to the first drain of a second device, the second drain of the first device connected to the second drain of the second device, the gate electrode of the second device connected to a second input terminal for receiving another input signal, the source of the second device connected to a voltage source and further to an output terminal providing an exclusive OR output of the input signals.

Claim 51

A logic device for performing a logic operation of input signals, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of splitted electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the gate electrode of the first device connected to a first input terminal for receiving an input signal, the first drain of the first device connected to the first drain of a second device, the second drain of the first device connected to the second drain of the second device, the gate electrode of the second device connected to a second input terminal for receiving another input signal, the source of the second device connected to a voltage source and further to an output terminal providing an exclusive OR output of the input signals.

Claim 52

A logic device for performing a logic operation of input signals, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of splitted electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the gate electrode of the first device connected to a first input terminal for receiving an input signal, the first drain of the first device connected to the first drain of a second device, the second drain of the first device connected to the second drain of the second device, the gate electrode of the second device connected to a second input terminal for receiving another input signal, the source of the second device connected to a voltage source and further to an output terminal providing an exclusive NOR output of the input signals.

Claim 53

A logic device for performing a logic operation of input signals, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of splitted electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the gate electrode of the first device connected to a first input terminal for receiving an input signal, the first drain of the first device connected to the first drain of a second device, the second drain of the first device connected to the second drain of the second device, the gate electrode of the second device connected to a second input terminal for receiving another input signal, the source of the second device connected to a voltage source and further to an output terminal providing an exclusive NOR output of the input signals.

Claim 54

A logic device for performing a logic operation of input signals, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of split electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the gate electrode of the first device connected to a first input terminal for receiving an input signal, the first drain of the first device connected to the second drain of a second device, the second drain of the first device connected to the first drain of the second device, the gate electrode of the second device connected to a second input terminal for receiving another input signal, the source of the second device connected to a voltage source and further to an output terminal providing an exclusive OR output of the input signals.

Claim 55

A logic device for performing a logic operation of input signals, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of split electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the gate electrode of the first device connected to a first input terminal for receiving an input signal, the first drain of the first device connected to the second drain of a second device, the second drain of the first device connected to the first drain of the second device, the gate electrode of the second device connected to a second input terminal for receiving another input signal, the source of the second device connected to a voltage source and further to an output terminal providing an exclusive OR output of the input signals.

Claim 56

A comparator for comparing first and second input signals and producing a result of comparison selectively at one of three output terminals, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of split electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the gate electrode of the first device connected to a first input terminal for receiving the first input signal, the second drain connected to the source of a second device, the first drain connected to the source of a third device, the first drain of the second device connected to a voltage source via a first resister, the second drain of the second device connected to the first drain of the third device and further to the voltage source via a second resistor, the second drain of the third device connected to the voltage source via a third resister, the gate electrodes of the second and third devices connected commonly to another input terminal for receiving the second input signal, and in which the three output terminals are connected such that the first of the output terminals connected to the first drain of the second device, the second of the output terminals connected to the second drain of the second device, and the third of the output terminals connected to the second drain of the third device.

Claim 57

A comparator for comparing first and second input signals and producing a result of comparison selectively at one of three output terminals, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of split electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the gate electrode of the first device connected to a first input terminal for receiving the first input signal, the second drain connected to the source of a second device, the first drain connected to the source of a third device, the first drain of the second device connected to a voltage source via a first resister, the second drain of the second device connected to the first drain of the third device and further to the voltage source via a second resistor, the second drain of the third device connected to the voltage source via a third resister, the gate electrodes of the second and third devices connected commonly to another input terminal for receiving the second input signal, and in which the three output terminals are connected such that the first of the output terminals connected to the first drain of the second device, the second of the output terminals connected to the second drain of the second device, and the third of the output terminals connected to the second drain of the third device.

Claim 58

A four-level priority encoder for producing first through third output signals at first through third output terminals in response to a combination of input data supplied at first through four input terminals such that a first output data appears at the first and second output terminals in response to a first input data to the first input terminal, the first output data appears only at the first output terminal in response to a second input data to the first input terminal and the first input data to the second input terminal, the first output data appears only at the second output terminal in response to the second input data to the first and second input terminals while the first input data to the third input terminal, a second output data appears to all of the first through third output terminals in response to the first input data to the fourth input terminal while the second input data to the first through third input terminals, and that the first output data appears at the third output terminal in response to the second input data to the first through fourth input terminals, characterized in that the four-level priority encoder comprises a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of split electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the gate electrode of the first device connected to the first input terminal, the second drain of the first device connected to a voltage source via a first resistor, the first drain of the first device connected to the source of a second device, the second drain of the second device connected, commonly to the second drain of the first device, to the voltage source via the first resister, the first drain of the second device connected to the source of a third device, the gate electrode of the second device connected to the second input terminal, the first drain of the third device connected to the source of a fourth device, the second drain of the third device connected to the first drain of a fifth device, the gate electrode of the third device connected to the third input terminal, the source of the fifth device connected to the voltage source via a second resistor, the second drain of the fifth device connected to the voltage source, commonly to the second drains of the first and second devices, via the first resister, the gate electrode of the fifth device connected, commonly to the gate electrode of the first device, to the first input terminal, the first drain of the fourth device connected to the voltage source via a third resistor, the second drain of the fourth device connected to the voltage source via a fourth resister, and the gate electrode of the fourth device connected to the fourth input terminal.

Claim 59

A four-level priority encoder for producing first through third output signals at first through third output terminals in response to a combination of input data supplied at first through four input terminals such that a first output data appears at the first and second output terminals in response to a first input data to the first input terminal, the first output data appears only at the first output terminal in response to a second input data to the first input terminal and the first input data to the second input terminal, the first output data appears only at the second output terminal in response to the second input data to the first and second input terminals while the first input data to the third input terminal, a second output data appears to all of the first through third output terminals in response to the first input data to the fourth input terminal while the second input data to the first through third input terminals, and that the first output data appears at the third output terminal in response to the second input data to the first through fourth input terminals, characterized in that the four-level priority encoder comprises a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of split electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the gate electrode of the first device connected to the first input terminal, the second drain of the first device connected to a voltage source via a first resistor, the first drain of the first device connected to the source of a second device, the second drain of the second device connected, commonly to the second drain of the first device, to the voltage source via the first resister, the first drain of the second device connected to the source of a third device, the gate electrode of the second device connected to the second input terminal, the first drain of the third device connected to the source of a fourth device, the second drain of the third device connected to the first drain of a fifth device, the gate electrode of the third device connected to the third input terminal, the source of the fifth device connected to the voltage source via a second resistor, the second drain of the fifth device connected to the voltage source, commonly to the second drains of the first and second devices, via the first resister, the gate electrode of the fifth device connected, commonly to the gate electrode of the first device, to the first input terminal, the first drain of the fourth device connected to the voltage source via a third resistor, the second drain of the fourth device connected to the voltage source via a fourth resister, and the gate electrode of the fourth device connected to the fourth input terminal.

Claim 60

A half-adder for adding input binary data applied to first and second input terminals, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of split electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the gate electrode of the first device connected to the first input terminal, the second drain of the first device connected to a source of the second device, the first drain of the first device connected to the source of the third device, the second drain of a second device connected to a voltage source via a first resister, the first drain of the second device connected to the voltage source via a second resister, the second drain of a third device connected, commonly to the first drain of the second device, to the voltage source via a second resistor, the first drain of the third device connected to the voltage source via a third resistor, the gate electrodes of the second and third devices connected commonly to the second input terminal, the second drain of the third device connected to a first output terminal providing a result of addition of input data applied to the first and second input terminals, and the second drain of the second device connected to a second output terminal providing the carry produced as a result of the addition.

Claim 61

A half-adder for adding input binary data applied to first and second input terminals, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of split electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the gate electrode of the first device connected to the first input terminal, the second drain of the first device connected to a source of the second device, the first drain of the first device connected to the source of the third device, the second drain of a second device connected to a voltage source via a first resister, the first drain of the second device connected to the voltage source via a second resister, the second drain of a third device connected, commonly to the first drain of the second device, to the voltage source via a second resistor, the first drain of the third device connected to the voltage source via a third resistor, the gate electrodes of the second and third devices connected commonly to the second input terminal, the second drain of the third device connected to a first output terminal providing a result of addition of input data applied to the first and second input terminals, and the second drain of the second device connected to a second output terminal providing the carry produced as a result of the addition.

Claim 62

A full-adder for adding input binary data applied to first through third input terminals, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of splitted electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the source of a second device is connected to the ground, the gate electrodes of the first and second devices are connected commonly to a first input terminal, the first drain of the first device connected to the source of the second device, the second drain of the first device connected to the source of a fourth device, the first drain of the second device connected to the source of a fifth device, the second drain of the second device connected to the source of a sixth device, the gate electrodes of the third through sixth devices connected commonly to a second input terminal, the first drain of the third device connected to a voltage source via a first resistor, the second drain of the third device connected to the source of a seventh device, the first drain of the fourth device connected, commonly to the second drain of the third device, to the source of the seventh device, the second drain of the fourth device connected to the voltage source via a second resistor, the first drain of the fifth device connected to the source of the eighth device, the second drain of the fifth device connected to the source of the ninth device, the second drain of the sixth device connected, commonly to the first drain of the fifth device, to the source of the eighth device, the first drain of the sixth device connected to the source of the ninth device, the gate electrodes of the seventh through ninth devices connected commonly to a third input terminal, the first drain of the seventh device connected to the voltage source via the first resistor, the second drain of the seventh device connected, commonly to the second drain of the fourth device, to the voltage source via the second resister, the first drain of the eighth device connected, commonly to the first drain of the seventh device, to the voltage source via the first resistor, the second drain of the eighth device connected to the voltage source via a third resistor, the first drain of the ninth device connected, commonly to the second drain of the eighth device, to the voltage source via the third resistor, the second drain of the ninth device connected, commonly to the first drain of the seventh device, to the voltage source via the first resistor, and wherein a first output terminal providing the sum of the addition is connected to the first drain of the ninth device, and a second output terminal providing the carry produced as a result of addition is connected to the second drain of the seventh device.

Claim 63

A full-adder for adding input binary data applied to first through third input terminals, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of splitted electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the source of a second device is connected to the ground, the gate electrodes of the first and second devices are connected commonly to a first input terminal, the first drain of the first device connected to the source of the second device, the second drain of the first device connected to the source of a fourth device, the first drain of the second device connected to the source of a fifth device, the second drain of the second device connected to the source of a sixth device, the gate electrodes of the third through sixth devices connected commonly to a second input terminal, the first drain of the third device connected to a voltage source via a first resistor, the second drain of the third device connected to the source of a seventh device, the first drain of the fourth device connected, commonly to the second drain of the third device, to the source of the seventh device, the second drain of the fourth device connected to the voltage source via a second resistor, the first drain of the fifth device connected to the source of the eighth device, the second drain of the fifth device connected to the source of the ninth device, the second drain of the sixth device connected, commonly to the first drain of the fifth device, to the source of the eighth device, the first drain of the sixth device connected to the source of the ninth device, the gate electrodes of the seventh through ninth devices connected commonly to a third input terminal, the first drain of the seventh device connected to the voltage source via the first resistor, the second drain of the seventh device connected, commonly to the second drain of the fourth device, to the voltage source via the second resister, the first drain of the eighth device connected, commonly to the first drain of the seventh device, to the voltage source via the first resistor, the second drain of the eighth device connected to the voltage source via a third resistor, the first drain of the ninth device connected, commonly to the second drain of the eighth device, to the voltage source via the third resistor, the second drain of the ninth device connected, commonly to the first drain of the seventh device, to the voltage source via the first resistor, and wherein a first output terminal providing the sum of the addition is connected to the first drain of the ninth device, and a second output terminal providing the carry produced as a result of addition is connected to the second drain of the seventh device.

Claim 64

A decoder for producing an output selectively at a plurality of output terminals in response to a combination of input data applied to a plurality of input terminals, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of splitted electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the gate electrode of the first device is connected to a first input terminal, the first drain of the first device connected to the source of a second device, the second drain of the first device connected to the source of the third device, the gate electrodes of the second and third devices connected commonly to a second input terminal, the first drain of the second device connected to the source of a fourth device, the second drain of the second device connected to the source of a fifth device, the first drain of the third device connected to the source of the sixth device, the second drain of the third device connected to the source of the sixth device, the first drain of the fourth device connected to a voltage source via a first resister, the second drain of the fourth device connected to the voltage source via a second resister, the first drain of the fifth device connected to the voltage source via a third resistor, the second drain of the fifth device connected to the voltage source via a fourth resistor, the first drain of the sixth device connected to the voltage source via a fifth resistor, the second drain of the sixth device connected to the voltage source via a sixth resistor, the first drain of the seventh device connected to the voltage source via a seventh resistor, and the second drain of the seventh device connected to the voltage source via an eighth resistor, the first drain of the fourth device connected to a first output terminal, the second drain of the fourth device connected to a second output terminal, the first drain of the fifth device connected to a third output terminal, the second drain of the fifth device connected to a fourth output terminal, the first drain of the sixth device connected to a fifth output terminal, the second drain of the sixth device connected to a sixth output terminal, the first drain of the seventh device connected to a seventh output terminal, and the second drain of the seventh device connected to an eighth output terminal.

Claim 65

A decoder for producing an output selectively at a plurality of output terminals in response to a combination of input data applied to a plurality of input terminals, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of splitted electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the gate electrode of the first device is connected to a first input terminal, the first drain of the first device connected to the source of a second device, the second drain of the first device connected to the source of the third device, the gate electrodes of the second and third devices connected commonly to a second input terminal, the first drain of the second device connected to the source of a fourth device, the second drain of the second device connected to the source of a fifth device, the first drain of the third device connected to the source of the sixth device, the second drain of the third device connected to the source of the sixth device, the first drain of the fourth device connected to a voltage source via a first resister, the second drain of the fourth device connected to the voltage source via a second resister, the first drain of the fifth device connected to the voltage source via a third resistor, the second drain of the fifth device connected to the voltage source via a fourth resistor, the first drain of the sixth device connected to the voltage source via a fifth resistor, the second drain of the sixth device connected to the voltage source via a sixth resistor, the first drain of the seventh device connected to the voltage source via a seventh resistor, and the second drain of the seventh device connected to the voltage source via an eighth resistor, the first drain of the fourth device connected to a first output terminal, the second drain of the fourth device connected to a second output terminal, the first drain of the fifth device connected to a third output terminal, the second drain of the fifth device connected to a fourth output terminal, the first drain of the sixth device connected to a fifth output terminal, the second drain of the sixth device connected to a sixth output terminal, the first drain of the seventh device connected to a seventh output terminal, and the second drain of the seventh device connected to an eighth output terminal.

Claim 66

A two-bit comparator for comparing a two-bit data supplied to first and second input terminals with another two-bit data supplied to third and fourth input terminals for producing a three-bit output data indicative of the result of comparison, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of splitted electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the second drain of the first device connected to the source of a second device, the first drain of the first device connected to the source of the third device, the gate electrode of the first device connected to the first input terminal, the gate electrodes of the second and third devices connected commonly to a second input terminal, the first drain of the second device connected to a voltage source via a first resister, the second drain of the second device connected to the source of a fourth device, the first drain of the third device connected, commonly to the second drain of the second device, to the source of the fourth device, the second drain of the third device connected to the voltage source via a second resister, the gate electrode of the fourth device connected to a third input terminal, the second drain of the fourth device connected to the source of a fifth device, the first drain of the fourth device connected to the source of a sixth device, the first drain of the fifth device connected to the voltage source, commonly to the first drain of the second device, to the voltage source via the first resister, the second drain of the fifth device connected to the voltage source via a third resistor, the first drain of the sixth device connected, commonly to the second drain of the fifth device, to the voltage source via the third resistor, the second drain of the sixth device connected to the voltage source via the second resistor, the gate electrodes of the fifth and sixth devices are connected commonly to a fourth input terminal, and wherein a first output terminal is connected to the first drain of the fifth device, a second output terminal is connected to the second drain of the fifth device, and a third output terminal is connected to the second drain of the sixth device.

Claim 67

A two-bit comparator for comparing a two-bit data supplied to first and second input terminals with another two-bit data supplied to third and fourth input terminals for producing a three-bit output data indicative of the result of comparison, characterized by a plurality of quantum interference semiconductor devices, each comprising a single source, first and second drains, passage means having a branched construction and branched into first through third arm portions respectively connected to the source and first and second drains, for passing electrons from the single source to the first and second drains, a spot-like surface region provided on the passage means in correspondence to a junction part where the first through third arm portions merge each other for inducing a spot-like depletion region in the junction part, first and second Schottky electrodes provided on the passage means in correspondence to the junction part so as to extend towards the spot-like surface region from both sides of the first arm for inducing first and second depletion regions in the junction part respectively such that the first depletion region defines a first spot-like channel region between the first depletion region and the spot-like depletion region and such that the second depletion region defines a second spot-like channel region between the second depletion region and the spot-like depletion region, said first and second spot-like channel regions passing each of the electrons flowing from the source region in a form of splitted electron waves and having a lateral size measured perpendicularly to the direction of propagation of electron waves such that the lateral size is approximately equal to or smaller than the de Broglie wavelength of electron waves incident thereto, said first and second Schottky electrodes being biased such that a relative phase shift of π /2 is induced in the electron wave passing through the first spot-like channel region with respect to the electron wave passing through the second spot-like region, and a gate electrode provided on the passage means in correspondence to the junction part between the second and third arms along a boundary between the second and third arms so as to extend towards the spot-like surface region, said gate electrode making Schottky contact with the passage means and inducing a third depletion region in the junction part such that the third depletion region extend towards the spot-like depletion region induced underneath the spot-like surface region for defining a third spot-like channel region between the third depletion region and the spot-like depletion region for passing the electron waves, said spot-like depletion region having the lateral size approximately equal to or smaller than the de Broglie wavelength of the electron waves incident thereto and induces a phase shift of π /2 in the electron wave passing therethrough in a first state corresponding to a first gate voltage applied to the gate electrode and a phase shift of - π /2 in a second state corresponding to a second gate voltage at the gate electrode, whereby the electrons flow from the source to the first drain in response to the first gate voltage while flow to the second drain in response to the second gate voltage; wherein the source of a first device is connected to the ground, the second drain of the first device connected to the source of a second device, the first drain of the first device connected to the source of the third device, the gate electrode of the first device connected to the first input terminal, the gate electrodes of the second and third devices connected commonly to a second input terminal, the first drain of the second device connected to a voltage source via a first resister, the second drain of the second device connected to the source of a fourth device, the first drain of the third device connected, commonly to the second drain of the second device, to the source of the fourth device, the second drain of the third device connected to the voltage source via a second resister, the gate electrode of the fourth device connected to a third input terminal, the second drain of the fourth device connected to the source of a fifth device, the first drain of the fourth device connected to the source of a sixth device, the first drain of the fifth device connected to the voltage source, commonly to the first drain of the second device, to the voltage source via the first resister, the second drain of the fifth device connected to the voltage source via a third resistor, the first drain of the sixth device connected, commonly to the second drain of the fifth device, to the voltage source via the third resistor, the second drain of the sixth device connected to the voltage source via the second resistor, the gate electrodes of the fifth and sixth devices are connected commonly to a fourth input terminal, and wherein a first output terminal is connected to the first drain of the fifth device, a second output terminal is connected to the second drain of the fifth device, and a third output terminal is connected to the second drain of the sixth device.

Claim 70

A method as claimed in claim 1 characterized in that said region (222) of high resistance is formed by irradiation of focused ion beam to the cap layer.

Claim 73

A method as claimed in claim 53 characterized in that the method further comprises a step of forming a region (216b) having a high resistance by selective ion implantation such that the channel is formed between the region of high resistance formed by ion implantation and the groove formed by selective etching.