US5371046A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method to solve sog non-uniformity in the VLSI process
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1993-07-22
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Granted: 1994-12-06
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Expires: 2013-07-22
Abstract
Abstract A new method of planarizing an integrated circuit is described. A first coating of a silicate spin-on-glass material is applied to the surface of a patterned conductor layer to be planarized. The spin-on-glass material is applied under low relative humidity, filling the valleys of the irregular structure of the conductor layer. The first spin-on-glass layer is covered with a second coating of the spin-on-glass material also applied under low relative humidity. Then, both first and second spin-on-glass layers are cured. This method provides a uniform spin-on-glass dielectric layer upon which a second conductor layer may now be successfully applied.
Inventors
- 👤 Yung-Haw Liaw
- 👤 Hsin-Chieh Huang
- 👤 Pao-Ling Kuo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 10:22
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0448; H10P95/00; H10P95/06; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
143 words
The method of planarizing the dielectric layers between conductor layers in submicron integrated circuits comprising: providing semiconductor device structures in and on a semiconductor substrate; providing at least one patterned conductive layer for contacting the active elements of said device structures; wherein the surface of said patterned conductive layer structure is irregular with horizontal and vertical components; covering said patterned conductor layer with a first coating of a spin-on-glass material applied under relative humidity of less than about 35% wherein said spin-on-glass material fills the valleys of said irregular structure; covering said first spin-on-glass layer with a second coating of said spin-on-glass material applied under relative humidity of less than about 35%; simultaneously curing both said first and second spin-on-glass layers wherein said spin-on-glass layers provide and even coating; and depositing a second conductor layer over said spin-on-glass layers to complete said planarization.
Claim 2
Independent Claim
143 words
The method of planarizing the dielectric layers between conductor layers in submicron integrated circuits comprising: providing semiconductor device structures in and on a semiconductor substrate; providing at least one patterned conductive layer for contacting the active elements of said device structures; wherein the surface of said patterned conductive layer structure is irregular with horizontal and vertical components; covering said patterned conductor layer with a first coating of a spin-on-glass material applied under relative humidity of less than about 35% wherein said spin-on-glass material fills the valleys of said irregular structure; covering said first spin-on-glass layer with a second coating of said spin-on-glass material applied under relative humidity of less than about 35%; simultaneously curing both said first and second spin-on-glass layers wherein said spin-on-glass layers provide and even coating; and depositing a second conductor layer over said spin-on-glass layers to complete said planarization.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein said spin-on-glass material is a silicate.
Claim 4
Dependent Claim
22 words
The method of claim 2 wherein each of said first and second spin-on-glass layers are less than about 2800 Angstroms in thickness.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein said low relative humidity is less than or equal to 30%.
Claim 6
Dependent Claim
19 words
The method of claim 1 wherein said first and second spin-on-glass coatings are applied within a humidity controller chamber.
Claim 7
Independent Claim
167 words
The method of planarizing the dielectric layers between conductor layers in submicron integrated circuits by using silicate spin-on-glass material comprising: providing semiconductor device structures in and on a semiconductor substrate; providing at least one patterned conductive layer for contacting the active elements of said device structures; wherein the surface of said patterned conductive layer structure is irregular with horizontal and vertical components; covering said patterned conductor layer with a first coating of a silicate type spin-on-glass material applied under relative humidity of less than about 35% wherein said spin-on-glass material fills the valleys of said irregular structure; covering said first spin-on-glass layer with a second coating of said spin-on-glass material applied under relative humidity of less than about 35%; wherein each of said first and second spin-on-glass layers are less than about 2800 Angstroms in thickness; simultaneously curing both said first and second spin-on-glass layers wherein said spin-on-glass layers provide and even coating; and depositing a second conductor layer over said spin-on-glass layers to complete said planarization.
Claim 8
Independent Claim
167 words
The method of planarizing the dielectric layers between conductor layers in submicron integrated circuits by using silicate spin-on-glass material comprising: providing semiconductor device structures in and on a semiconductor substrate; providing at least one patterned conductive layer for contacting the active elements of said device structures; wherein the surface of said patterned conductive layer structure is irregular with horizontal and vertical components; covering said patterned conductor layer with a first coating of a silicate type spin-on-glass material applied under relative humidity of less than about 35% wherein said spin-on-glass material fills the valleys of said irregular structure; covering said first spin-on-glass layer with a second coating of said spin-on-glass material applied under relative humidity of less than about 35%; wherein each of said first and second spin-on-glass layers are less than about 2800 Angstroms in thickness; simultaneously curing both said first and second spin-on-glass layers wherein said spin-on-glass layers provide and even coating; and depositing a second conductor layer over said spin-on-glass layers to complete said planarization.
Claim 9
Dependent Claim
17 words
The method of claim 6 wherein said low relative humidity is less than or equal to 30%.
Claim 10
Dependent Claim
22 words
The method of claim 6 wherein said first and second spin-on-glass coatings are applied within a humidity controller chamber with dehumidified air.
Claim 11
Dependent Claim
27 words
The method of claim 8 wherein the dehumidified air is flowed laminarly from the top of said chamber to the location where said spin-on-glass coating are applied.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-05 | 1998-06-06 | 1998-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-05 | 2002-06-06 | 2002-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-05 | 2006-06-06 | 2006-12-06 | $7700.00 | Window Closed / Lapsed |