Patent US4549092A successfully refreshed from Google Patents.
Patent US5370975A successfully refreshed from Google Patents.
US5370975A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming resist pattern
Assignee: Mitsubishi Electric Corp
•
Filing: 1993-11-12
•
Granted: 1994-12-06
•
Expires: 2013-11-12
Abstract
Abstract A phase shift mask having a phase shifter with an edge angle ranging from 70° to 85° or 95° to 110° is used as a reticle in forming a resist pattern so that the exposure pattern applied to the resist has a light intensity distribution with constant light intensity contrast. A fine resist pattern having a predetermined width no more than the wavelength of the light used to form the pattern is produced precisely and reproducibly under constant developing conditions. In addition, there is provided on the side wall of the phase shifter of the phase shift mask a light shielding film which, due to its width, cannot be resolved as an exposure pattern itself. A region in which the light intensity is reduced from the constant level corresponding to the width of the light shielding film in the exposure pattern is formed by the projection lens. Therefore, a fine resist pattern having a predetermined width no more than the wavelength of the light used to form the pattern is produced precisely and reproducibly using constant developing conditions. As a result, semiconductor devices with good performance can be manufactured with high yield.
Inventors
- 👤 Mitsunori Nakatani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 23:45
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/34; G03F1/28; G03F7/00; G03F7/20; G03F7/2002; G03F7/70; G03F7/70216; G03F7/70283
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
122 words
A method for forming a resist pattern comprising: irradiating a phase shift mask, including a phase shifter disposed on a transparent substrate, the phase shifter having an edge forming an angle with the substrate in a range from about 70° to 85° and 95° to 110°, with light having a wavelength, the light being diffracted by the edge of the phase shifter; forming an image by focusing the diffracted light with a lens, thereby producing an exposure pattern having a region corresponding to the edge in which light intensity is reduced; applying the exposure pattern to a resist film on a wafer; and developing the resist film to form a resist pattern corresponding to the light intensity distribution of the exposure pattern.
Claim 2
Independent Claim
122 words
A method for forming a resist pattern comprising: irradiating a phase shift mask, including a phase shifter disposed on a transparent substrate, the phase shifter having an edge forming an angle with the substrate in a range from about 70° to 85° and 95° to 110°, with light having a wavelength, the light being diffracted by the edge of the phase shifter; forming an image by focusing the diffracted light with a lens, thereby producing an exposure pattern having a region corresponding to the edge in which light intensity is reduced; applying the exposure pattern to a resist film on a wafer; and developing the resist film to form a resist pattern corresponding to the light intensity distribution of the exposure pattern.
Claim 3
Dependent Claim
25 words
The method for forming a resist pattern according to claim 1 including forming a pattern having dimensions no larger than the wavelength of the light.
Claim 4
Dependent Claim
19 words
The method for forming a resist pattern according to claim 1 wherein focus depth is at least 1.5 microns.
Claim 5
Dependent Claim
18 words
The method for forming a resist pattern according to claim 1 wherein the resist is a negative resist.
Claim 6
Independent Claim
141 words
A method for forming a resist pattern comprising: irradiating a phase shift mask, including a phase shifter disposed on a transparent substrate, the phase shifter including a side wall and a light shielding film disposed at the side wall on the substrate and having a width, with light having a wavelength, the light being diffracted by the edge of the phase shifter; forming an image by focusing the diffracted light with a lens, thereby producing an exposure pattern having a region corresponding to the edge in which light intensity is reduced; applying the exposure pattern to a resist film on a wafer; and developing the resist film to form a resist pattern corresponding to the light intensity distribution of the exposure pattern wherein the light shielding film, due to its width, is not resolved as a pattern on the resist film;
Claim 7
Independent Claim
141 words
A method for forming a resist pattern comprising: irradiating a phase shift mask, including a phase shifter disposed on a transparent substrate, the phase shifter including a side wall and a light shielding film disposed at the side wall on the substrate and having a width, with light having a wavelength, the light being diffracted by the edge of the phase shifter; forming an image by focusing the diffracted light with a lens, thereby producing an exposure pattern having a region corresponding to the edge in which light intensity is reduced; applying the exposure pattern to a resist film on a wafer; and developing the resist film to form a resist pattern corresponding to the light intensity distribution of the exposure pattern wherein the light shielding film, due to its width, is not resolved as a pattern on the resist film;
Claim 8
Dependent Claim
24 words
The method for forming a resist pattern according to claim 5 including forming a pattern having dimensions no larger than the wavelength of light.
Claim 9
Dependent Claim
19 words
The method for forming a resist pattern according to claim 5 wherein focus depth is at least 1.5 microns.
Claim 10
Dependent Claim
18 words
The method for forming a resist pattern according to claim 5 wherein the resist is a negative resist.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-05 | 1998-06-06 | 1998-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-05 | 2002-06-06 | 2002-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-05 | 2006-06-06 | 2006-12-06 | $7700.00 | Window Closed / Lapsed |