Semiconductor wafer processing apparatus having a Bernoulli chuck

Claim 2

A semiconductor processing apparatus comprising: a containing unit; a suction plate provided in said containing unit, having a blowing port for blowing gas, and sucking a semiconductor substrate thereto by gas blown from said blowing port; first introducing means, communicated with said blowing port, for introducing carrier gas into said blowing port, said first introducing means including a first pipe communicated with said blowing port in said suction plate for introducing said carrier gas; second introducing means, communicated with said first introducing means, for introducing a reactant gas into said first introducing means, said second introducing means including a second pipe connected in the vicinity of said blowing port, for introducing said reactant gas, and for mixing said reactant gas with said carrier gas; transferring means for transferring the semiconductor substrate to a portion in the vicinity of said suction plate; heating means, arranged around said first introducing means, for heating the carrier gas introduced into said first introducing means; detecting means for detecting the temperature of said suction plate; and control means for controlling said heating means in accordance with the temperature detected by said detecting means.

Claim 3

The apparatus according to claim 1, wherein said suction plate has a plurality of blowing ports.

Claim 4

The apparatus according to claim 1, wherein said first introducing means has a cavity which is formed in an intermediate portion of said first introducing means, and a heating means for heating said carrier gas is formed around said cavity.

Claim 5

The apparatus according to claim 1, wherein a peripheral surface of said suction plate is inclined relative to a central portion of said suction plate.

Claim 6

A semiconductor processing apparatus comprising: a containing unit; a suction plate provided in said containing unit, having a blowing port for blowing gas, and sucking a semiconductor substrate thereto by gas blown from said blowing port; first heating means provided in said suction plate, for heating the suction plate and the semiconductor substrate; first introducing means, communicated with said blowing port, for introducing a carrier gas into said blowing port, said first introducing means including a first pipe communicated with said blowing port in said suction plate for introducing said carrier gas; second introducing means, communicated with said first introducing means, for introducing a reactant gas into said first introducing means, said second introducing means including a second pipe connected in the vicinity of said blowing port, for introducing said reactant gas, and for mixing said reactant gas with said carrier gas; and second heating means, arranged around said first introducing means, for heating the carrier gas introduced into the first introducing means.

Claim 7

A semiconductor processing apparatus comprising: a containing unit; a suction plate provided in said containing unit, having a blowing port for blowing gas, and sucking a semiconductor substrate thereto by gas blown from said blowing port; first heating means provided in said suction plate, for heating the suction plate and the semiconductor substrate; first introducing means, communicated with said blowing port, for introducing a carrier gas into said blowing port, said first introducing means including a first pipe communicated with said blowing port in said suction plate for introducing said carrier gas; second introducing means, communicated with said first introducing means, for introducing a reactant gas into said first introducing means, said second introducing means including a second pipe connected in the vicinity of said blowing port, for introducing said reactant gas, and for mixing said reactant gas with said carrier gas; and second heating means, arranged around said first introducing means, for heating the carrier gas introduced into the first introducing means.

Claim 8

A semiconductor processing apparatus comprising: a containing unit; a suction plate provided in said containing unit, having a blowing port for blowing gas, and sucking a semiconductor substrate thereto by gas blown from said blowing port, wherein said suction plate has a plurality of grooves formed around said blowing port for rotating gas to be blown from said blowing port; first introducing means, communicated with said blowing port, for introducing carrier gas into said blowing port, said first introducing means including a first pipe communicated with said blowing port in said suction plate for introducing said carrier gas; second introducing means, communicated with said first introducing means, for introducing a reactant gas into said first introducing means, said second introducing means including a second pipe connected in the vicinity of said blowing port, for introducing said reactant gas, and for mixing said reactant gas with said carrier gas; transferring means for transferring the semiconductor substrate to a portion in the vicinity of said suction plate; heating means, arranged around said first introducing means, for heating the carrier gas introduced into said first introducing means; detecting means for detecting the temperature of said suction plate; and control means for controlling said heating means in accordance with the temperature detected by said detecting means.

Claim 9

A semiconductor processing apparatus comprising: a containing unit; a suction plate provided in said containing unit, having a blowing port for blowing gas, and sucking a semiconductor substrate thereto by gas blown from said blowing port, wherein said suction plate has a plurality of grooves formed around said blowing port for rotating gas to be blown from said blowing port; first introducing means, communicated with said blowing port, for introducing carrier gas into said blowing port, said first introducing means including a first pipe communicated with said blowing port in said suction plate for introducing said carrier gas; second introducing means, communicated with said first introducing means, for introducing a reactant gas into said first introducing means, said second introducing means including a second pipe connected in the vicinity of said blowing port, for introducing said reactant gas, and for mixing said reactant gas with said carrier gas; transferring means for transferring the semiconductor substrate to a portion in the vicinity of said suction plate; heating means, arranged around said first introducing means, for heating the carrier gas introduced into said first introducing means; detecting means for detecting the temperature of said suction plate; and control means for controlling said heating means in accordance with the temperature detected by said detecting means.