Patent US5369658A successfully refreshed from Google Patents.
US5369658A
Expired / Lapsed
US
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Semiconductor laser
Assignee: Rohm Co Ltd
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Filing: 1993-06-25
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Granted: 1994-11-29
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Expires: 2013-06-25
Abstract
Abstract A self-aligned type, high-power semiconductor laser is provided which exhibits multi-longitudinal mode oscillation in the low-power operation (at a light power output of, for example, 3 mW) through it is of a refractive index guiding structure capable of single transverse mode oscillation in up to the high-power operation. Specifically, the semiconductor laser is of an AlGaAs system and has a waveguide mechanism resulting from complex refractive index, and wherein a current-blocking layer is 2000 to 6000 Å thick.
Inventors
- 👤 Katsuhiko Ikawa
- 👤 Hiroshi Mataki
- 👤 Satoshi Uchida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 16:25
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/204; H01S5/2205; H01S5/2206; H01S5/30; H01S5/32; H01S5/323; H01S5/32308
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
67 words
In a self-aligned type semiconductor laser of AlGaAs system having a waveguide mechanism resulting from a complex refractive index profile, which comprises: an active layer; a clad layer on the active layer; and a current-blocking layer formed on the clad layer, the current-blocking layer being 2000 to 6000 Å thick, and wherein a distance between the active layer and the current-blocking layer is 2500 to 3500 Å.
Claim 2
Dependent Claim
67 words
In a self-aligned type semiconductor laser of AlGaAs system having a waveguide mechanism resulting from a complex refractive index profile, which comprises: an active layer; a clad layer on the active layer; and a current-blocking layer formed on the clad layer, the current-blocking layer being 2000 to 6000 Å thick, and wherein a distance between the active layer and the current-blocking layer is 2500 to 3500 Å.
Claim 3
Dependent Claim
12 words
The semiconductor laser of claim 1, which is of a double heterostructure.
Claim 4
Dependent Claim
39 words
The semiconductor laser of claim 2, wherein said clad layer is composed of Al x Ga 1-x As (0.35≦x≦0.7), said active layer is composed of Al y Ga 1-y As (0≦y≦0.15), and said current-blocking layer is composed of GaAs.
Claim 5
Dependent Claim
46 words
The semiconductor laser of claim 3, further comprising a beam-expanding layer of Al z Ga 1-z As (0.2≦z≦0.7) which is sandwiched, together with a portion of said clad layer, between said active layer and said current-blocking layer, while the Al content z satisfies the relation y<z<x.
Claim 6
Dependent Claim
76 words
The semiconductor laser of claim 1, which is coated at a light-emitting face thereof with an Al 1 O 3 film having a thickness of λ/4 where λ is a wavelength of laser light in a waveguide medium, and at a rear end face thereof with a four layers film in which an Al 2 O 3 layer having a thickness of λ/4 and an amorphous silicon layer having a thickness of λ/4 are alternately stacked.
Claim 7
Dependent Claim
17 words
The semiconductor laser of claim 1, wherein said active layer is of a multiple quantum well structure.
Claim 8
Dependent Claim
33 words
The semiconductor laser of claim 6, wherein said multiple quantum well structure is of a stacked structure in which an Al p Ga 1-p As layer and a GaAs layer are alternately stacked.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-28 | 1998-05-30 | 1998-11-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-28 | 2002-05-30 | 2002-11-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-28 | 2006-05-30 | 2006-11-29 | $7700.00 | Window Closed / Lapsed |