US5369657A
Expired / Lapsed
US
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Silicon-based microlaser by doped thin films
Assignee: Texas Instruments Inc
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Filing: 1992-09-15
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Granted: 1994-11-29
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Expires: 2012-09-15
Abstract
Abstract A silicon-based microlaser formed of rare-earth-doped CaF 2 thin films has a semiconductor substrate material (240) and a CaF 2 film layers (234) grown on semiconductor substrate material (240), The CaF 2 film layer (234) is doped with a predetermined amount of rare-earth-dopant that is sufficient to cause a spectral emission from the CaF 2 film layer (234) having a narrow linewidth when the CaF 2 film layer (234) is optically or electrically pumped.
Inventors
- 👤 Chih-Chen Cho
- 👤 Walter M. Duncan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:46
CPC Classifications
H; H01; H01S; H01S3/00; H01S3/05; H01S3/06; H01S3/0627; H01S3/14; H01S3/16; H01S3/0602; H01S3/0604; H01S3/063; H01S3/0632; H01S3/0635; H01S3/1601; H01S3/1603; H01S3/1611; H01S3/163; H01S3/1645; H01S3/165; H01S5/00; H01S5/02; H01S5/026; H01S5/04; H01S5/041; H01S5/10; H01S5/18; H01S5/183; H01S5/30; H01S5/32; H01S5/3223; H01S5/3224; H01S5/3227
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
89 words
A silicon-based microlaser formed of doped thin material films, comprising: a semiconductor substrate material comprising silicon; at least one layer of CaF 2 grown on said semiconductor substrate material comprising a predetermined amount of dopant sufficient to cause spectral emissions on said layer when pumped; said spectral emissions having a high intensity an narrow emission linewidths; said layer further having a thickness within an order of magnitude of the wavelength of said spectral emission such that intensities of said spectral emissions are insensitive to crystal quality of the layer.
Claim 2
Dependent Claim
89 words
A silicon-based microlaser formed of doped thin material films, comprising: a semiconductor substrate material comprising silicon; at least one layer of CaF 2 grown on said semiconductor substrate material comprising a predetermined amount of dopant sufficient to cause spectral emissions on said layer when pumped; said spectral emissions having a high intensity an narrow emission linewidths; said layer further having a thickness within an order of magnitude of the wavelength of said spectral emission such that intensities of said spectral emissions are insensitive to crystal quality of the layer.
Claim 3
Dependent Claim
12 words
The apparatus of claim 1, wherein said dopant comprises a transition metal.
Claim 4
Dependent Claim
12 words
The apparatus of claim 1, wherein said dopant comprises a rare-earth element.
Claim 5
Dependent Claim
11 words
The apparatus of claim 3, wherein said rare-earth element comprises Nd.
Claim 6
Dependent Claim
11 words
The apparatus of claim 3, wherein said rare-earth element comprises Eu.
Claim 7
Dependent Claim
15 words
The apparatus of claim 1, wherein said dopant comprises a combination of Nd and Eu.
Claim 8
Dependent Claim
15 words
The apparatus of claim 1, wherein said dopant comprises a combination of Nd and Er.
Claim 9
Dependent Claim
11 words
The apparatus of claim 1, wherein said layer is optically pumped.
Claim 10
Dependent Claim
11 words
The apparatus of claim 1, wherein said layer is electrically pumped.
Claim 11
Dependent Claim
17 words
The apparatus of claim 1, further comprising a distributed Bragg reflector set for reflecting said spectral emission.
Claim 12
Dependent Claim
18 words
The apparatus of claim 1, further comprising a distributed feedback laser for reflecting and amplifying said spectral emission.
Claim 13
Dependent Claim
11 words
The apparatus of claim 1 wherein said film quality of epitaxial.
Claim 14
Dependent Claim
12 words
The apparatus of claim 12, wherein said dopant comprises a rare-earth element.
Claim 15
Dependent Claim
10 words
The apparatus of claim 13, wherein said dopant comprises Nd.
Claim 16
Dependent Claim
11 words
The apparatus of claim 1 wherein said film quality is polycrystalline.
Claim 17
Independent Claim
92 words
A method for producing a spectral emission comprising the steps of: forming a thin film layer of CaF 2 over a semiconductor substrate material comprising silicon, said thin film layer comprising a predetermined amount of dopant; and pumping said thin film layer to produce a spectral emission having a narrow linewidth wherein said thin film layer has a thickness within an order of magnitude of the wavelength of said spectral emission, and wherein the intensity of said spectral emission is generally insensitive to whether said thin film layer is epitaxial or polycrystalline.
Claim 18
Independent Claim
92 words
A method for producing a spectral emission comprising the steps of: forming a thin film layer of CaF 2 over a semiconductor substrate material comprising silicon, said thin film layer comprising a predetermined amount of dopant; and pumping said thin film layer to produce a spectral emission having a narrow linewidth wherein said thin film layer has a thickness within an order of magnitude of the wavelength of said spectral emission, and wherein the intensity of said spectral emission is generally insensitive to whether said thin film layer is epitaxial or polycrystalline.
Claim 19
Dependent Claim
27 words
The method of claim 16, wherein said step of pumping said thin film layer comprises pumping a thin film layer having a dopant comprising a transition metal.
Claim 20
Dependent Claim
27 words
The method of claim 16, wherein said step of pumping said thin film layer comprises pumping a thin film layer having a dopant comprising a rare-earth element.
Claim 21
Dependent Claim
25 words
The method of claim 18, wherein said step of pumping said thin film layer comprises pumping a thin film layer having a dopant comprising Nd.
Claim 22
Dependent Claim
25 words
The method of claim 18, wherein said step of pumping said thin film layer comprises pumping a thin film layer comprising a dopant of Eu.
Claim 23
Dependent Claim
25 words
The method of claim 18, wherein said step of pumping said thin film layer comprises pumping a thin film layer comprising a dopant of Er.
Claim 24
Dependent Claim
30 words
The method of claim 16, wherein said step of pumping said thin film layer comprises pumping a thin film layer having a dopant comprising a combination of Nd and Eu.
Claim 25
Dependent Claim
30 words
The method of claim 16, wherein said step of pumping said thin film layer comprises pumping a thin film layer having a dopant comprising a combination of Nd and Er.
Claim 26
Dependent Claim
21 words
The method of claim 16, wherein said step of pumping said thin film layer comprises optically pumping said thin film layer.
Claim 27
Dependent Claim
21 words
The method of claim 16, wherein said step of pumping said thin film layer comprises electrically pumping said thin film layer.
Claim 28
Dependent Claim
25 words
The method of claim 16, further comprising the step of forming a distributed Bragg reflector adjacent said thin film layer for reflecting said spectral emission.
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