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US5369048A
Expired / Lapsed
US
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Stack capacitor DRAM cell with buried bit-line and method of manufacture
Assignee: United Microelectronics Corp
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Filing: 1993-08-26
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Granted: 1994-11-29
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Expires: 2013-08-26
Abstract
Abstract A DRAM cell of transistors with a stack capacitor includes a gate comprising a word line formed over the gate oxide layer. The cell is made by depositing a first dielectric layer over the gate, etching through the first dielectric layer to form a bit-line contact opening therein exposing a portion of the surface of the drain, deposition of a bit-line layer over the product of etching the first dielectric layer and into the bit-line opening, forming a mask and etching the bit-line from the bit-line layer, deposition of second dielectric layer, deposition of a first lower capacitor plate, node contact etching a trench down to expose the source, deposition of dielectric spacer material into the node contact region, masking and etching to form spacers on the side wall of the trench into which node contact is to be made, deposition of a lower capacitor plate layer forming the top portion of a two layer capacitor plate with the first lower capacitor plate layer, the second lower capacitor plate layer extending down into the node contact trench to contact the surface of source, depositing a capacitor dielectric layer over the lower capacitor plate and depositing an upper capacitor plate layer over the capacitor dielectric.
Inventors
- 👤 Chen-Chiu Hsue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 03:15
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
313 words
A method of manufacture of an integrated circuit DRAM cell with a stack capacitor on a semiconductor substrate comprising a source region, a drain region, a gate oxide layer formed over said source and drain region and a gate comprising a word line formed over said gate oxide layer, comprising the steps of (a) deposition of a first dielectric layer over said gate layer, (b) forming a mask and etching through said first dielectric layer to form a bit-line contact opening therein exposing a portion of the surface of said drain region, (c) formation of a bit-line conductor layer over the product of (b) and into said bit-line contact opening, (d) forming a mask and etching a bit-line pattern from said bit-line conductor layer, (e) deposition of a second dielectric layer composed of silicon dioxide, (f) deposition of a lower capacitor plate layer, wherein said bit-line pattern, said silicon dioxide layer, and said lower capacitor plate layer are intermediate layers, (g) node contact etching a trench through said intermediate layers including said lower capacitor plate layer, said silicon dioxide layer and said bit-line pattern to form a node contact opening exposing the surface of said source region, (h) deposition of a dielectric spacer layer to form material for dielectric spacers in said trench comprising said node contact opening, (i) forming a mask and etching said dielectric spacer layer leaving spacer structures on the side wall of the trench comprising said node contact opening into which node contact is made, (j) deposition of a second lower capacitor plate layer forming the top portion of the two layer capacitor plate extending down into said trench forming said node contact opening to make electrical contact to the top surface of source region, (k) depositing a capacitor dielectric layer over said lower capacitor plate structure, and (l) depositing an upper capacitor plate layer over said capacitor dielectric.
Claim 2
Independent Claim
313 words
A method of manufacture of an integrated circuit DRAM cell with a stack capacitor on a semiconductor substrate comprising a source region, a drain region, a gate oxide layer formed over said source and drain region and a gate comprising a word line formed over said gate oxide layer, comprising the steps of (a) deposition of a first dielectric layer over said gate layer, (b) forming a mask and etching through said first dielectric layer to form a bit-line contact opening therein exposing a portion of the surface of said drain region, (c) formation of a bit-line conductor layer over the product of (b) and into said bit-line contact opening, (d) forming a mask and etching a bit-line pattern from said bit-line conductor layer, (e) deposition of a second dielectric layer composed of silicon dioxide, (f) deposition of a lower capacitor plate layer, wherein said bit-line pattern, said silicon dioxide layer, and said lower capacitor plate layer are intermediate layers, (g) node contact etching a trench through said intermediate layers including said lower capacitor plate layer, said silicon dioxide layer and said bit-line pattern to form a node contact opening exposing the surface of said source region, (h) deposition of a dielectric spacer layer to form material for dielectric spacers in said trench comprising said node contact opening, (i) forming a mask and etching said dielectric spacer layer leaving spacer structures on the side wall of the trench comprising said node contact opening into which node contact is made, (j) deposition of a second lower capacitor plate layer forming the top portion of the two layer capacitor plate extending down into said trench forming said node contact opening to make electrical contact to the top surface of source region, (k) depositing a capacitor dielectric layer over said lower capacitor plate structure, and (l) depositing an upper capacitor plate layer over said capacitor dielectric.
Claim 3
Dependent Claim
52 words
A method of manufacture of a DRAM cell with an integrated circuit stack capacitor in accordance with claim 1 wherein said first dielectric layer is formed by CVD deposition of silicon dioxide at a low temperature of about 450° C. to a thickness of between about 1500 Å and about 3000 Å.
Claim 4
Dependent Claim
51 words
A method of manufacture of a DRAM cell with an integrated circuit stack capacitor in accordance with claim 1 wherein a mask is formed and bit-line contact etching with buffered HF or dry etching is performed opening a bit-line contact opening through said first dielectric layer down to said drain region.
Claim 5
Dependent Claim
37 words
A method of manufacture of a DRAM cell with an integrated circuit stack capacitor in accordance with claim 3 wherein a polysilicon bit-line layer is deposited over said first dielectric layer and into said bit-line contact opening.
Claim 6
Dependent Claim
38 words
A method of manufacture of a DRAM cell with an integrated circuit stack capacitor in accordance with claim 4 wherein a mask is formed and said bit-line layer is etched with dry etching to form said bit-line pattern.
Claim 7
Dependent Claim
44 words
A method of manufacture of a DRAM cell with an integrated circuit stack capacitor in accordance with claim 5 wherein said second dielectric layer of silicon dioxide layer is deposited by CVD to a thickness of between about 1500 Å and about 2000 Å.
Claim 8
Dependent Claim
40 words
A method of manufacture of a DRAM cell with an integrated circuit stack capacitor in accordance with claim 6 wherein said lower capacitor plate is deposited by LPCVD to a thickness of between about 500 Å and about 5000 Å.
Claim 9
Dependent Claim
44 words
A method of manufacture of a DRAM cell with an integrated circuit stack capacitor in accordance with claim 7 wherein said node contact trench is formed by a stacked dry etch sequence employing dry etchants down to the top surface of said source region.
Claim 10
Dependent Claim
47 words
A method of manufacture of a DRAM cell with an integrated circuit stack capacitor in accordance with claim 8 wherein deposition of said spacer layer provides silicon dioxide to a thickness of between about 1500 Å and about 2500 Å to form material for silicon dioxide spacers.
Claim 11
Dependent Claim
64 words
A method of manufacture of a DRAM cell with an integrated circuit stack capacitor in accordance with claim 9 wherein said spacer layer is shaped by dry etching in the node contact area exposing the top surface of region of said source region, but leaving said silicon dioxide spacer structures on said side walls of said trench into which said node contact is etched.
Claim 12
Dependent Claim
60 words
A method of manufacture of a DRAM cell with an integrated circuit stack capacitor in accordance with claim 10 wherein said second lower capacitor plate layer comprises polysilicon deposited to a thickness of between about 800 Å and about 2500 Å extending down into said node contact trench to make electrical contact to the top surface of said source region.
Claim 13
Dependent Claim
82 words
A method of manufacture of a DRAM call with an integrated circuit stack capacitor in accordance with claim 11 wherein said capacitor dielectric layer is formed by the steps of deposition of a layer of nitride with a thin layer of oxide about 30 Å thick to form the dielectric layer of the storage capacitor and deposition of a polysilicon layer to a thickness of between about 800 Å and about 2500 Å to form said upper layer of said capacitor plate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-28 | 1998-05-30 | 1998-11-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-28 | 2002-05-30 | 2002-11-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-28 | 2006-05-30 | 2006-11-29 | $7700.00 | Window Closed / Lapsed |