Patent US5369040A successfully refreshed from Google Patents.
US5369040A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making transparent polysilicon gate for imaging arrays
Assignee: Micron Technology Inc
•
Filing: 1993-04-12
•
Granted: 1994-11-29
•
Expires: 2013-04-12
Abstract
Abstract An improved MOS photodetector having polysilicon gate material which is made more transparent to visible light by the addition of up to 50% carbon, and preferably about 10% carbon. The surfaces of the polysilicon-carbon gates are oxidized to form a silicon dioxide dielectric layer, thus eliminating the need to deposit a separate dielectric layer for isolation of adjacent gates in an overlapping gate array. The elimination of a separate dielectric layer permits all gates to be formed directly on the substrate dielectric layer, thus providing a uniform drive voltage requirement across the array.
Inventors
- 👤 James Halvis
- 👤 Nathan Bluzer
- 👤 Robert R. Shiskowski
- 👤 Li-Shu Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:52
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0198; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
158 words
A method of making a transparent polysilicon gate, comprising the steps of: forming an active photon absorber from a semiconductor substrate; forming a gate dielectric layer on said active photon absorber; depositing a first layer of polysilicon-carbon over said gate dielectric layer; defining a first array of gates by placing a first resist pattern over said first layer of polysilicon-carbon whereby portions of said first layer of polysilicon-carbon are exposed; forming said first array of gates by removing said exposed polysilicon-carbon in said first resist pattern; removing said first resist pattern; forming an insulating layer on said first array of gates; depositing a second layer of polysilicon-carbon ever said first array of gates; defining a second array of gates by placing a second resist pattern over said second layer of polysilicon-carbon whereby portions of said second layer of polysilicon-carbon are exposed; and forming said second array of gates by removing said exposed polysilicon-carbon in said second resist pattern.
Claim 2
Independent Claim
158 words
A method of making a transparent polysilicon gate, comprising the steps of: forming an active photon absorber from a semiconductor substrate; forming a gate dielectric layer on said active photon absorber; depositing a first layer of polysilicon-carbon over said gate dielectric layer; defining a first array of gates by placing a first resist pattern over said first layer of polysilicon-carbon whereby portions of said first layer of polysilicon-carbon are exposed; forming said first array of gates by removing said exposed polysilicon-carbon in said first resist pattern; removing said first resist pattern; forming an insulating layer on said first array of gates; depositing a second layer of polysilicon-carbon ever said first array of gates; defining a second array of gates by placing a second resist pattern over said second layer of polysilicon-carbon whereby portions of said second layer of polysilicon-carbon are exposed; and forming said second array of gates by removing said exposed polysilicon-carbon in said second resist pattern.
Claim 3
Dependent Claim
29 words
The method as recited in claim 1, wherein said first layer of polysilicon-carbon comprises S 1-x C x , where x is greater than 0.0 and less than 0.5.
Claim 4
Dependent Claim
29 words
The method as recited in claim 2, wherein said second layer of polysilicon-carbon comprises S 1-x C x , where x is greater than 0.0 and less than 0.5.
Claim 5
Dependent Claim
13 words
The method as recited in claim 3, wherein said semiconductor substrate comprises silicon.
Claim 6
Dependent Claim
15 words
The method as recited in claim 4, wherein said gate dielectric layer comprises silicon dioxide.
Claim 7
Dependent Claim
20 words
The method as recited in claim 4, wherein said gate dielectric layer comprises silicon dioxide and silicon nitride in combination.
Claim 8
Dependent Claim
23 words
The method as recited in claim 4, wherein said insulating layer is formed by oxidizing the surface of said first array of gates.
References Cited (Backward Citations)
US4113515A
Cited
JPS5350981A
Cited
US4189826A
Cited
US4352237A
Cited
JPS57204165A
Cited
US4780394A
Cited
JPS61296361A
Cited
EP0220120A1
Cited
US4963953A
Cited
JPH0260542A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-28 | 1998-05-30 | 1998-11-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-28 | 2002-05-30 | 2002-11-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-28 | 2006-05-30 | 2006-11-29 | $7700.00 | Window Closed / Lapsed |