Patent US5368915A successfully refreshed from Google Patents.
US5368915A
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Active matrix substrate
Assignee: Sharp Corp
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Filing: 1992-02-18
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Granted: 1994-11-29
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Expires: 2012-02-18
Abstract
Abstract An active matrix substrate comprising storage capacitors each having an insulating film formed of a single perovskite oxide or a solid solution composed of a plurality of the perovskite oxides. Since the perovskite oxide has a significantly high relative dielectric constant, the area of storage capacitor can be reduced while keeping or increasing the capacitance thereof. Further, the insulating film can be thickened as far as the insulation property thereof is not affected without the capacitance thereof being reduced, thereby preventing leakage current.
Inventors
- 👤 Tohru Ueda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:06
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136213; H01; H01B; H01B3/00; H01B3/02; H01B3/12; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917; Y10T428/24926
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
107 words
An active matrix substrate comprising thin film transistors and storage capacitors arranged in a matrix, wherein each of the storage capacitors includes a pair of electrodes facing each other and an insulating film interposed therebetween, one of the pair of electrodes being connected to one of said thin film transistors, and wherein the insulating film is a perovskite oxide expressed by a formula ABO 3 where A is selected from a group of Sr, Ba, Pb, Ca, La and Nd, B is selected from a group of Ti, Zr, V. Bi, Co and Ir, and O is oxygen, and said insulating film is a thin film deposit.
Claim 2
Dependent Claim
107 words
An active matrix substrate comprising thin film transistors and storage capacitors arranged in a matrix, wherein each of the storage capacitors includes a pair of electrodes facing each other and an insulating film interposed therebetween, one of the pair of electrodes being connected to one of said thin film transistors, and wherein the insulating film is a perovskite oxide expressed by a formula ABO 3 where A is selected from a group of Sr, Ba, Pb, Ca, La and Nd, B is selected from a group of Ti, Zr, V. Bi, Co and Ir, and O is oxygen, and said insulating film is a thin film deposit.
Claim 3
Dependent Claim
23 words
An active matrix substrate according to claim 1, wherein the insulating film is formed by a radio-frequency magnetron sputtering, evaporation or CVD method.
Claim 4
Dependent Claim
26 words
An active matrix substrate according to claim 1, wherein one of the pair of electrodes is a pixel electrode and the other is a gate bus.
Claim 5
Dependent Claim
104 words
An active matrix substrate comprising thin film transistors and storage capacitors arranged in a matrix, wherein each of the storage capacitors includes a pair of electrodes facing each other and an insulating film interposed therebetween, one of the pair of electrodes being connected to one of said thin film transistors, and wherein the insulating film is a solid solution deposit composed of a perovskite oxide expressed by a formula ABO 3 where A is selected from a group of Sr, Ba, Pb, Ca, La and Nd, B is selected from a group of Ti, Zr, V, Bi, Co and Ir, and O is oxygen.
Claim 6
Dependent Claim
104 words
An active matrix substrate comprising thin film transistors and storage capacitors arranged in a matrix, wherein each of the storage capacitors includes a pair of electrodes facing each other and an insulating film interposed therebetween, one of the pair of electrodes being connected to one of said thin film transistors, and wherein the insulating film is a solid solution deposit composed of a perovskite oxide expressed by a formula ABO 3 where A is selected from a group of Sr, Ba, Pb, Ca, La and Nd, B is selected from a group of Ti, Zr, V, Bi, Co and Ir, and O is oxygen.
Claim 7
Dependent Claim
31 words
An active matrix substrate according to claim 4, wherein the solid solution is a composition expressed by a formula Ba.sub.(1-X) Sr X TiO 3 where X is 0.3 to 0.6 inclusive.
Claim 8
Dependent Claim
23 words
An active matrix substrate according to claim 4, wherein the insulating film is formed by a radio-frequency magnetron sputtering, evaporation or CVD method.
Claim 9
Dependent Claim
26 words
An active matrix substrate according to claim 4, wherein one of the pair of electrodes is a pixel electrode and the other is a gate bus.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-28 | 1998-05-30 | 1998-11-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-28 | 2002-05-30 | 2002-11-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-28 | 2006-05-30 | 2006-11-29 | $7700.00 | Window Closed / Lapsed |