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US5366815A
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Magnetic multilayer and magnetoresistance effect element
Assignee: TDK Corp
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Filing: 1993-05-24
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Granted: 1994-11-22
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Expires: 2013-05-24
Abstract
Abstract A magnetic multilayer is an alternate stack of a plurality of magnetic thin films containing Fe, Co or Ni and a plurality of Ag thin film. Both the films are formed by molecular beam epitaxy to a thickness of 2 to 60 Å. The multilayer has an axis of easy magnetization in a plane parallel to the surface and an in-plane squareness ratio of 0.5 or lower and exhibits antiferromagnetism. The multilayer shows giant magnetoresistance change in low magnetic fields, for example, a magnetoresistance change of 1 to 40% in a magnetic field of 0.01 to 20 kOe.
Inventors
- 👤 Satoru Araki
- 👤 Kiyomi Yasui
- 👤 Yoshikazu Narumiya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 12:44
CPC Classifications
G; G01; G01R; G01R33/00; G01R33/02; G01R33/06; G01R33/09; G01R33/093; B; B82; B82Y; B82Y25/00; H; H01; H01F; H01F10/00; H01F10/32; H01F10/324; H01F10/325; H10; H10N; H10N50/00; H10N50/80; H10N50/85; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9265; Y10S428/928; Y10T; Y10T428/00; Y10T428/12; Y10T428/12465; Y10T428/12493; Y10T428/12632
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
107 words
A magnetoresistance effect element comprising a magnetic multilayer having a surface comprising alternating layers of at least one magnetic thin film containing at least one member selected from the group consisting of Fe, Co, and Ni, and at least one Ag thin film deposited by a molecular beam epitaxial method, wherein the particles deposited by the molecular beam epitaxial method had a kinetic energy of 0.01 to 5 eV and a center energy of 0.05 to 0.5 eV during deposition, said multilayer having an axis of easy magnetization in a plane parallel to the surface and a squareness ratio Br/Bs in the plane of up to 0.5.
Claim 2
Dependent Claim
107 words
A magnetoresistance effect element comprising a magnetic multilayer having a surface comprising alternating layers of at least one magnetic thin film containing at least one member selected from the group consisting of Fe, Co, and Ni, and at least one Ag thin film deposited by a molecular beam epitaxial method, wherein the particles deposited by the molecular beam epitaxial method had a kinetic energy of 0.01 to 5 eV and a center energy of 0.05 to 0.5 eV during deposition, said multilayer having an axis of easy magnetization in a plane parallel to the surface and a squareness ratio Br/Bs in the plane of up to 0.5.
Claim 3
Dependent Claim
39 words
The magneto-resistance effect element as claimed in claim 1, wherein said particles deposited by the molecular beam epitaxial method had a kinetic energy of 0.01 to 1.0 eV and a center energy of 0.05 to 0.5 eV during deposition.
Claim 4
Dependent Claim
31 words
The magnetic multilayer of claim 1 wherein the films are deposited under a pressure of about 10 -11 to 10 -7 Torr at a rate of about 0.01 to 10 Å/sec.
Claim 5
Dependent Claim
31 words
The magnetic multilayer of claim 3 wherein the films are deposited under a pressure at about 10 -10 to 10 -7 Torr at a rate of about 0.1 to 1.0 Å/sec.
Claim 6
Dependent Claim
81 words
A magnetoresistance effect element comprising a magnetic multilayer comprising alternating layers of at least one magnetic thin film containing at least one member selected from the group consisting of Fe, Co, and Ni, and at least one Ag thin film deposited by a molecular beam epitaxial method, wherein the particles deposited by the molecular beam epitaxial method had a kinetic energy of 0.01 to 5 eV, and a center energy of from 0.05 to 0.5 eV during deposition, and exhibiting antiferromagnetism.
Claim 7
Dependent Claim
81 words
A magnetoresistance effect element comprising a magnetic multilayer comprising alternating layers of at least one magnetic thin film containing at least one member selected from the group consisting of Fe, Co, and Ni, and at least one Ag thin film deposited by a molecular beam epitaxial method, wherein the particles deposited by the molecular beam epitaxial method had a kinetic energy of 0.01 to 5 eV, and a center energy of from 0.05 to 0.5 eV during deposition, and exhibiting antiferromagnetism.
Claim 8
Dependent Claim
40 words
The magneto-resistance effect element as claimed in claim 5, wherein said particles deposited by the molecular beam epitaxial method had a kinetic energy of 0.01 to 1.0 eV and a center energy of from 0.05 to 0.5 eV during deposition.
Claim 9
Dependent Claim
94 words
A magnetoresistance effect element comprising a magnetic multilayer comprising alternating layers of at least one magnetic thin film containing at least one member selected from the group consisting of Fe, Co, and Ni having a thickness of 2 to 60 Å, and at least one Ag thin film having a thickness of 2 to 60 Å deposited by a molecular beam epitaxial method, wherein the particles deposited by the molecular beam epitaxial method had a kinetic energy of 0.01 to 5 eV and a center energy of from 0.05 to 0.5 eV during deposition.
Claim 10
Dependent Claim
94 words
A magnetoresistance effect element comprising a magnetic multilayer comprising alternating layers of at least one magnetic thin film containing at least one member selected from the group consisting of Fe, Co, and Ni having a thickness of 2 to 60 Å, and at least one Ag thin film having a thickness of 2 to 60 Å deposited by a molecular beam epitaxial method, wherein the particles deposited by the molecular beam epitaxial method had a kinetic energy of 0.01 to 5 eV and a center energy of from 0.05 to 0.5 eV during deposition.
Claim 11
Dependent Claim
40 words
The magneto-resistance effect element as claimed in claim 7, wherein said particles deposited by the molecular beam epitaxial method had a kinetic energy of 0.01 to 1.0 eV and a center energy of from 0.05 to 0.5 eV during deposition.
Claim 12
Dependent Claim
36 words
The magnetic multilayer of claim 7 having a surface, said multilayer having an axis of easy magnetization in a plane parallel to the surface and a squareness ratio Br/Bs in the plane of up to 0.5.
References Cited (Backward Citations)
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