Abstract A method of forming a planarized or smoothed dielectric or other material layer upon a partially fabricated integrated circuit is disclosed. Conventional planarization techniques involve deposition of a dielectric or other material layer followed by anisotropic etchback. Unfortunately, some commercial equipment tends to etch the center of the wafer faster than the edges. The disclosed process forms a layer which is thicker in the central region than the edge region. Thus, when the disclosed process is followed by a conventional etchback, a planar dielectric or other material layer over the entire wafer is formed. Other aspects of the invention include processes and apparatus for producing smooth deposition and etching by control of the impedance of the etching and/or chemical precursor gases.
An apparatus for forming a material layer upon a substrate comprising a shower head positioned generally above a susceptor; said shower head enclosing a baffle plate, said baffle plate having a plurality of radial grooves, the width of said grooves being less near the center of said plate than at the edge.
Claim 2
Independent Claim
52 words
An apparatus for forming a material layer upon a substrate comprising a shower head positioned generally above a susceptor; said shower head enclosing a baffle plate, said baffle plate having a plurality of radial grooves, the width of said grooves being less near the center of said plate than at the edge.