Patent US5365102A successfully refreshed from Google Patents.
US5365102A
Expired / Lapsed
US
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Schottky barrier rectifier with MOS trench
Assignee: North Carolina State University
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Filing: 1993-07-06
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Granted: 1994-11-15
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Expires: 2013-07-06
Abstract
Abstract A trench MOS Schottky barrier rectifier includes a semiconductor substrate having first and second faces, a cathode region of first conductivity type at the first face and a drift region of first conductivity type on the cathode region, extending to the second face. First and second trenches are formed in the drift region at the second face and define a mesa of first conductivity type therebetween. The mesa can be rectangular or circular in shape or of stripe geometry. Insulating regions are defined on the sidewalls of the trenches, adjacent the mesa, and an anode electrode is formed on the insulating regions, and on the top of the mesa at the second face. The anode electrode forms a Schottky rectifying contact with the mesa. The magnitude of reverse-biased leakage currents in the mesa and the susceptibility to reverse breakdown are limited not only by the potential barrier formed by the rectifying contact but also by the potential difference between the mesa and the portion of anode electrode extending along the insulating regions. Moreover, by properly choosing the width of the mesa, and by doping the mesa to a concentration greater than about 1×10 16 per cubic centimeters, reverse blocking voltages greater than those of a corresponding parallel-plane P-N junction rectifier can be achieved.
Inventors
- 👤 Manoj Mehrotra
- 👤 Bantval J. Baliga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:48
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/60; H10D8/605
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
116 words
A semiconductor rectifier comprising: a semiconductor substrate having first and second opposing faces, said substrate having a cathode region of first conductivity type extending to said first face and a drift region of said first conductivity type extending to said second face, said drift region having a predetermined drift region doping concentration; a cathode electrode on said first face, ohmically contacting said cathode region; an anode electrode on said second face, said anode electrode forming a Schottky rectifying junction with said drift region at said second face; and means, in said drift region, for increasing the reverse blocking voltage of said Schottky rectifying junction above the reverse blocking voltage of an ideal parallel-plane abrupt P-N junction
Claim 2
Dependent Claim
116 words
A semiconductor rectifier comprising: a semiconductor substrate having first and second opposing faces, said substrate having a cathode region of first conductivity type extending to said first face and a drift region of said first conductivity type extending to said second face, said drift region having a predetermined drift region doping concentration; a cathode electrode on said first face, ohmically contacting said cathode region; an anode electrode on said second face, said anode electrode forming a Schottky rectifying junction with said drift region at said second face; and means, in said drift region, for increasing the reverse blocking voltage of said Schottky rectifying junction above the reverse blocking voltage of an ideal parallel-plane abrupt P-N junction
Claim 3
Dependent Claim
130 words
The semiconductor rectifier of claim 1, wherein said means for increasing the reverse blocking voltage of the Schottky rectifying junction comprises: a first trench in said drift region at said second face, said first trench having a first sidewall; and a second trench in said drift region adjacent said first trench, said second trench having a second sidewall, adjacent said first sidewall, said first and second sidewalls defining a mesa in said drift region, having a predetermined mesa width from said first sidewall to said second sidewall; wherein said predetermined drift region doping concentration is greater than 1×10 16 dopants per cubic centimeter; and wherein the product of said predetermined drift region doping concentration and said predetermined mesa width is less than or equal to 5×10 12 per square centimeter.
Claim 4
Dependent Claim
32 words
The semiconductor rectifier of claim 2, wherein said cathode region has a predetermined cathode region doping concentration and wherein said drift region doping concentration is less than said cathode region doping concentration.
Claim 5
Dependent Claim
91 words
The semiconductor rectifier of claim 1, wherein said means for increasing the reverse blocking voltage of said Schottky rectifying junction comprises: a first trench in said drift region at said second face, said first trench having a first sidewall; and a second trench in said drift region adjacent said first trench, said second trench having a second sidewall, adjacent said first sidewall, said first and second sidewalls defining a mesa in said drift region; and wherein said predetermined drift region doping concentration is greater than 1×10 16 dopants per cubic centimeter.
Claim 6
Dependent Claim
220 words
A semiconductor rectifier comprising: a semiconductor substrate having first and second opposing faces, said substrate having a cathode region of first conductivity type extending to said first face and a drift region of said first conductivity type extending to said second face; a cathode electrode on said first face, ohmically contacting said cathode region; a first trench in said drift region at said second face, said first trench having a first sidewall in said drift region; a second trench in said drift region adjacent said first trench, said second trench having a second sidewall in said drift region, adjacent said first sidewall, said first and second sidewalls defining a mesa in said drift region, having a predetermined mesa width from said first sidewall to said second sidewall and having a predetermined mesa doping concentration; first and second insulating regions on said first sidewall and said second sidewall, respectively; and an anode electrode on said second face and on said first and said second insulating regions, said anode electrode forming a rectifying contact with said mesa at said second face; wherein said predetermined mesa doping concentration is greater than 1×10 16 dopants per cubic centimeter; and wherein the product of said predetermined mesa doping concentration and said predetermined mesa width is less than or equal to 5×10 12 per square centimeter.
Claim 7
Dependent Claim
220 words
A semiconductor rectifier comprising: a semiconductor substrate having first and second opposing faces, said substrate having a cathode region of first conductivity type extending to said first face and a drift region of said first conductivity type extending to said second face; a cathode electrode on said first face, ohmically contacting said cathode region; a first trench in said drift region at said second face, said first trench having a first sidewall in said drift region; a second trench in said drift region adjacent said first trench, said second trench having a second sidewall in said drift region, adjacent said first sidewall, said first and second sidewalls defining a mesa in said drift region, having a predetermined mesa width from said first sidewall to said second sidewall and having a predetermined mesa doping concentration; first and second insulating regions on said first sidewall and said second sidewall, respectively; and an anode electrode on said second face and on said first and said second insulating regions, said anode electrode forming a rectifying contact with said mesa at said second face; wherein said predetermined mesa doping concentration is greater than 1×10 16 dopants per cubic centimeter; and wherein the product of said predetermined mesa doping concentration and said predetermined mesa width is less than or equal to 5×10 12 per square centimeter.
Claim 8
Dependent Claim
26 words
The semiconductor rectifier of claim 5, wherein said semiconductor substrate comprises silicon and wherein said first insulating region and said second insulating region comprise silicon dioxide.
Claim 9
Dependent Claim
16 words
The semiconductor rectifier of claim 6, wherein said first sidewall extends parallel to said second sidewall.
Claim 10
Dependent Claim
35 words
The semiconductor rectifier of claim 7, wherein said first trench has a first width equal to said predetermined mesa width and wherein said second trench has a second width equal to said predetermined mesa width.
Claim 11
Dependent Claim
26 words
The semiconductor rectifier of claim 6, wherein the distance between the center of said first trench and said second trench is twice said predetermined mesa width.
Claim 12
Dependent Claim
242 words
A semiconductor rectifier comprising: a semiconductor substrate having first and second opposing faces, said substrate having a cathode region of first conductivity type extending to said first face; a cathode electrode on said first face, ohmically contacting said cathode region; a first trench in said substrate at said second face, said first trench having a first sidewall in said substrate; a second trench in said substrate adjacent said first trench, said second trench having a second sidewall in said substrate, adjacent said first sidewall, said first and second sidewalls defining a mesa in said substrate, said mesa extending to said second face and having a predetermined mesa width from said first sidewall to said second sidewall; a drift region of said first conductivity type in said substrate, extending between said cathode region and said second face and between said first and said second sidewalls, said drift region having a predetermined drift region doping concentration; first and second insulating regions on said first sidewall and said second sidewall, respectively; and an anode electrode on said second face and on said first and said second insulating regions, said anode electrode forming a rectifying contact with said mesa at said second face; wherein said predetermined drift region doping concentration is greater than 1×10 16 dopants per cubic centimeter; and wherein the product of said predetermined drift region doping concentration and said predetermined mesa width is less than or equal to 5×10 12 per square centimeter.
Claim 13
Dependent Claim
242 words
A semiconductor rectifier comprising: a semiconductor substrate having first and second opposing faces, said substrate having a cathode region of first conductivity type extending to said first face; a cathode electrode on said first face, ohmically contacting said cathode region; a first trench in said substrate at said second face, said first trench having a first sidewall in said substrate; a second trench in said substrate adjacent said first trench, said second trench having a second sidewall in said substrate, adjacent said first sidewall, said first and second sidewalls defining a mesa in said substrate, said mesa extending to said second face and having a predetermined mesa width from said first sidewall to said second sidewall; a drift region of said first conductivity type in said substrate, extending between said cathode region and said second face and between said first and said second sidewalls, said drift region having a predetermined drift region doping concentration; first and second insulating regions on said first sidewall and said second sidewall, respectively; and an anode electrode on said second face and on said first and said second insulating regions, said anode electrode forming a rectifying contact with said mesa at said second face; wherein said predetermined drift region doping concentration is greater than 1×10 16 dopants per cubic centimeter; and wherein the product of said predetermined drift region doping concentration and said predetermined mesa width is less than or equal to 5×10 12 per square centimeter.
Claim 14
Dependent Claim
26 words
The semiconductor rectifier of claim 10, wherein said semiconductor substrate comprises silicon and wherein said first insulating region and said second insulating region comprise silicon dioxide.
Claim 15
Dependent Claim
16 words
The semiconductor rectifier of claim 11, wherein said first sidewall extends parallel to said second sidewall.
Claim 16
Dependent Claim
35 words
The semiconductor rectifier of claim 12, wherein said first trench has a first width equal to said predetermined mesa width and wherein said second trench has a second width equal to said predetermined mesa width.
Claim 17
Dependent Claim
32 words
The semiconductor rectifier of claim 11, wherein said cathode region has a predetermined cathode region doping concentration and wherein said drift region doping concentration is less than said cathode region doping concentration.
Claim 18
Dependent Claim
169 words
A semiconductor rectifier comprising: a semiconductor substrate of first conductivity type having first and second opposing faces; a first trench in said substrate at said second face, said first trench having a first sidewall; a second trench in said substrate adjacent said first trench, said second trench having a second sidewall, adjacent said first sidewall, said first and second sidewalls defining a mesa having a predetermined mesa width from said first sidewall to said second sidewall and having a predetermined mesa doping concentration; first and second insulating regions on said first sidewall and said second sidewall, respectively; and an anode electrode on said second face and on said first and said second insulating regions, said anode electrode forming a rectifying contact with said mesa at said second face; wherein said predetermined mesa doping concentration is greater than 1×10 16 dopants per cubic centimeter; and wherein the product of said predetermined mesa doping concentration and said predetermined mesa width is less than or equal to 5×10 12 per square centimeter.
Claim 19
Dependent Claim
169 words
A semiconductor rectifier comprising: a semiconductor substrate of first conductivity type having first and second opposing faces; a first trench in said substrate at said second face, said first trench having a first sidewall; a second trench in said substrate adjacent said first trench, said second trench having a second sidewall, adjacent said first sidewall, said first and second sidewalls defining a mesa having a predetermined mesa width from said first sidewall to said second sidewall and having a predetermined mesa doping concentration; first and second insulating regions on said first sidewall and said second sidewall, respectively; and an anode electrode on said second face and on said first and said second insulating regions, said anode electrode forming a rectifying contact with said mesa at said second face; wherein said predetermined mesa doping concentration is greater than 1×10 16 dopants per cubic centimeter; and wherein the product of said predetermined mesa doping concentration and said predetermined mesa width is less than or equal to 5×10 12 per square centimeter.
Claim 20
Dependent Claim
26 words
The semiconductor rectifier of claim 15 wherein said semiconductor substrate comprises silicon and wherein said first insulating region and said second insulating region comprise silicon dioxide.
Claim 21
Dependent Claim
16 words
The semiconductor rectifier of claim 16, wherein said first sidewall extends parallel to said second sidewall.
Claim 22
Dependent Claim
35 words
The semiconductor rectifier of claim 17, wherein said first trench has a first width equal to said predetermined mesa width and wherein said second trench has a second width equal to said predetermined mesa width.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-14 | 1998-05-16 | 1998-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-14 | 2002-05-16 | 2002-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-14 | 2006-05-16 | 2006-11-15 | $7700.00 | Window Closed / Lapsed |