US5365081A
Expired / Lapsed
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Semiconductor device incorporating thermally contracted film
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1992-03-27
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Granted: 1994-11-15
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Expires: 2012-03-27
Abstract
Abstract A semiconductor device and a method for forming the same. The semiconductor device comprises an insulating or semiconductor substrate, a thermally-contractive insulating film which is formed on said substrate and provided with grooves, and a semiconductor film which is formed on the thermally-contractive insulating film and divided in an islandish form through the grooves. The thermally-contractive insulating film is contracted in a heat process after the semiconductor film is formed.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:44
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/856; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0227; H10D86/0229; H10D88/00; Y; Y10; Y10S; Y10S438/00; Y10S438/967
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
57 words
A semiconductor device comprising: an insulating and thermally contracted film provided on a surface; and a semiconductor film island provided on said insulating and thermally contracted film, functioning at least as a channel region of said device, wherein said insulating and thermally contracted film is contracted by heating after the formation of said semiconductor film island thereon.
Claim 2
Dependent Claim
57 words
A semiconductor device comprising: an insulating and thermally contracted film provided on a surface; and a semiconductor film island provided on said insulating and thermally contracted film, functioning at least as a channel region of said device, wherein said insulating and thermally contracted film is contracted by heating after the formation of said semiconductor film island thereon.
Claim 3
Dependent Claim
24 words
The device of claim 1 wherein said semiconductor film island is forced to contract by the contraction of said insulating and thermally contracted film.
Claim 4
Dependent Claim
22 words
The device of claim 1 wherein said contraction of said insulating and thermally contracted film is in the range of 0-500 ppm.
Claim 5
Dependent Claim
17 words
The device of claim 1 wherein a groove is formed within said insulating and thermally contracted film.
Claim 6
Dependent Claim
31 words
The device of claim 4 wherein said groove is formed by removing a part of said film in order that a surface of said substrate is not exposed to said groove.
Claim 7
Dependent Claim
44 words
A semiconductor device comprising: a heat-contracted insulating film formed on a surface, having a thickness of 50-1000 nm; and a semiconductor film formed on said insulating film, having a thickness of 10-500 nm and functioning as at least a channel region of said device.
Claim 8
Dependent Claim
44 words
A semiconductor device comprising: a heat-contracted insulating film formed on a surface, having a thickness of 50-1000 nm; and a semiconductor film formed on said insulating film, having a thickness of 10-500 nm and functioning as at least a channel region of said device.
Claim 9
Dependent Claim
22 words
The device of claim 6 wherein said glass is selected from the group consisting of phosphosilicate glass, borosilicate glass and a quartz.
Claim 10
Dependent Claim
14 words
The device of claim 6 wherein a groove is formed within said insulating film.
Claim 11
Dependent Claim
77 words
A semiconductor device comprising: a heat-contracted insulating film formed on a surface, having a thickness of 50-1000 nm and having a groove formed therein; and a semiconductor film formed on said insulating film having a thickness of 10-500 nm and functioning at least as an active region of said device; wherein said groove is formed by removing a part of said insulating film in order that a surface of said substrate is not exposed to said groove.
Claim 12
Dependent Claim
77 words
A semiconductor device comprising: a heat-contracted insulating film formed on a surface, having a thickness of 50-1000 nm and having a groove formed therein; and a semiconductor film formed on said insulating film having a thickness of 10-500 nm and functioning at least as an active region of said device; wherein said groove is formed by removing a part of said insulating film in order that a surface of said substrate is not exposed to said groove.
Claim 13
Dependent Claim
58 words
A semiconductor device comprising: a substrate having thereon a plurality of insulating islands separated from one another and comprising a heat-contracted insulating film, respectively: a semiconductor layer formed on said insulating islands, functioning as at least a channel region of said device, wherein said heat-contracted insulating film is contracted by heating after the formation of said semiconductor layer.
Claim 14
Dependent Claim
58 words
A semiconductor device comprising: a substrate having thereon a plurality of insulating islands separated from one another and comprising a heat-contracted insulating film, respectively: a semiconductor layer formed on said insulating islands, functioning as at least a channel region of said device, wherein said heat-contracted insulating film is contracted by heating after the formation of said semiconductor layer.
Claim 15
Dependent Claim
34 words
The device of claim 10 wherein said semiconductor layer extends over some of said islands so that said semiconductor layer directly contacts with said substrate at a gap between adjacent ones of said islands.
Claim 16
Dependent Claim
25 words
The device of claim 10 wherein said semiconductor layer has a thickness of 10-500 nm and said insulating layer has a thickness of 50-1000 nm.
Claim 17
Dependent Claim
19 words
The device of claim 10 wherein a thickness "T" and a width "L" of said insulating islands satisfies L/T<1000.
Claim 18
Dependent Claim
54 words
A semiconductor device comprising: a substrate having thereon a plurality of insulating islands separated from one another and comprising a heat-contracted insulating film having a heat contraction in the range of 30-500 ppm, respectively; and a semiconductor layer formed on said insulating islands and functioning as at least a channel region of said device.
Claim 19
Dependent Claim
54 words
A semiconductor device comprising: a substrate having thereon a plurality of insulating islands separated from one another and comprising a heat-contracted insulating film having a heat contraction in the range of 30-500 ppm, respectively; and a semiconductor layer formed on said insulating islands and functioning as at least a channel region of said device.
Claim 20
Dependent Claim
22 words
The device of claim 14 wherein said glass is selected from the group consisting of phosphosilicate glass, borosilicate glass and a quartz.
Claim 21
Dependent Claim
71 words
A semiconductor device comprising: a substrate having thereon a plurality of insulating islands separated from one another and comprising a heat-contracted insulating film, respectively; a plurality of semiconductor islands separated from one another and formed on said insulating islands, respectively, where each of said semiconductor islands function as at least a channel of said device, wherein said heat-contracted insulating film is contracted by heating after the formation of said semiconductor layer.
Claim 22
Dependent Claim
71 words
A semiconductor device comprising: a substrate having thereon a plurality of insulating islands separated from one another and comprising a heat-contracted insulating film, respectively; a plurality of semiconductor islands separated from one another and formed on said insulating islands, respectively, where each of said semiconductor islands function as at least a channel of said device, wherein said heat-contracted insulating film is contracted by heating after the formation of said semiconductor layer.
Claim 23
Dependent Claim
27 words
The device of claim 16 wherein said heat contracted insulating film comprises a glass selected from the group consisting of phosphosilicate glass, borosilicate glass and a quartz.
Claim 24
Dependent Claim
83 words
A semiconductor device comprising: an insulating and thermally contracted film provided on a surface; and a semiconductor film island provided on said insulating and thermally contracted film with a groove formed therein, wherein said insulating and thermally contracted film is contracted by heating after the formation of said semiconductor film island thereon, and wherein said groove is formed by removing a part of said insulating and thermally contracted film in order that a surface of said substrate is not exposed to said groove.
Claim 25
Dependent Claim
83 words
A semiconductor device comprising: an insulating and thermally contracted film provided on a surface; and a semiconductor film island provided on said insulating and thermally contracted film with a groove formed therein, wherein said insulating and thermally contracted film is contracted by heating after the formation of said semiconductor film island thereon, and wherein said groove is formed by removing a part of said insulating and thermally contracted film in order that a surface of said substrate is not exposed to said groove.
Claim 26
Dependent Claim
56 words
A semiconductor device comprising: a heat-contracted insulating film comprising glass and formed on a surface having a groove formed therein; and a semiconductor film formed on said insulating film, wherein said groove is formed by removing a part of said insulating film in order that a surface of said substrate is not exposed to said groove.
Claim 27
Dependent Claim
56 words
A semiconductor device comprising: a heat-contracted insulating film comprising glass and formed on a surface having a groove formed therein; and a semiconductor film formed on said insulating film, wherein said groove is formed by removing a part of said insulating film in order that a surface of said substrate is not exposed to said groove.
Claim 28
Dependent Claim
24 words
The device of claim 1 wherein said insulating and thermally-contracted film contains 10 to 30 atom % hydrogen prior to the heat contraction thereof.
Claim 29
Dependent Claim
22 words
The device of claim 6 wherein said heat-contracted film contains 10 to 30 atom % hydrogen prior to the heat contraction thereof.
Claim 30
Dependent Claim
22 words
The device of claim 16 wherein said heat-contracted film contains 10 to 30 atom % hydrogen prior to the heat contraction thereof.
Claim 31
Dependent Claim
13 words
The device of claim 6 wherein said heat contracted insulating layer comprises glass.
Claim 32
Dependent Claim
13 words
The device of claim 9 wherein said heat contracted insulating layer comprises glass.
Claim 33
Dependent Claim
13 words
The device of claim 14 wherein said heat contracted insulating layer comprises glass.
References Cited (Backward Citations)
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