US5363798A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Large area semiconductor wafers
Assignee: United States Department of the Navy
•
Filing: 1993-09-29
•
Granted: 1994-11-15
•
Expires: 2013-09-29
Abstract
Abstract A method of synthesizing a large area, single crystalline, semiconductor wafer in which the semiconductor is grown on a substrate having a lower melting temperature and higher specific gravity than the overlying semiconductor. The substrate is disposed within an open container or holder having a drain plug. First, a very thin layer of semiconductor is grown on the substrate. Then, the temperature is raised to melt the substrate and anneal the very thin layer of semiconductor. Next, growth of the semiconductor film now floating on the molten substrate is resumed until the desired thickness is obtained. Then, the molten substrate is drained from the holder, the temperature lowered to room temperature, and the nascent large area semiconductor wafer removed from the holder. In an alternate procedure, the molten substrate is not drained from the holder, but the semiconductor is grown to a thickness sufficient to force misfit defects in the underlying substrate as the temperature is lowered and the substrate resolidifies.
Inventors
- 👤 Max N. Yoder
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:28
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; C30B29/00; C30B29/10; C30B29/36; Y; Y10; Y10S; Y10S117/00; Y10S117/915; Y10S148/00; Y10S148/135
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
325 words
A method of synthesizing a large area wafer of single crystalline semiconductor material, which comprises the steps of: (a) selecting a foreign substrate for said semiconductor material, said substrate having (1) a lower melting temperature than does the semiconductor material to be synthesized, (2) a higher specific gravity than does the semiconductor material to be synthesized, (3) immunity to etching under the conditions typical for growth of the semiconducting material to be synthesized, and (4) low diffusivity in the semiconductor material to be synthesized; (b) disposing said substrate in a substrate holder which (1) melts at a temperature higher than does the substrate and also higher than the expected growth temperature of the semiconductor material, (2) has a recessed region having bottom planar dimensions greater than the substrate and a depth greater than the combined thickness of the substrate and the thickest film of semiconductor material to be synthesized, and (3) is positioned horizontally with the recess upward facing; (c) growing an epitaxial layer of the semiconductor material onto the substrate to a thickness of nominally three times that of the pseudomorphic limit of the semiconductor material; (d) raising the temperature of the substrate to a first selected temperature within a temperature range exceeding the melting temperature of the substrate, but below the boiling temperature of the substrate, the melting temperature of the substrate holder, and the melting temperature of the semiconductor material, for a sufficient time to melt the substrate and anneal the synthesized solid nascent layer of the semiconductor material floating on the molten substrate; (e) maintaining the molten substrate at a second selected temperature within said temperature range while resuming the growth of said epitaxial layer of the semiconductor material floating on the molten substrate until the desired thickness of semiconductor material is reached; and (f) reducing the temperature of the substrate holder and material disposed therein to room temperature and removing the wafer comprising said semiconductor material from the substrate holder.
Claim 2
Independent Claim
325 words
A method of synthesizing a large area wafer of single crystalline semiconductor material, which comprises the steps of: (a) selecting a foreign substrate for said semiconductor material, said substrate having (1) a lower melting temperature than does the semiconductor material to be synthesized, (2) a higher specific gravity than does the semiconductor material to be synthesized, (3) immunity to etching under the conditions typical for growth of the semiconducting material to be synthesized, and (4) low diffusivity in the semiconductor material to be synthesized; (b) disposing said substrate in a substrate holder which (1) melts at a temperature higher than does the substrate and also higher than the expected growth temperature of the semiconductor material, (2) has a recessed region having bottom planar dimensions greater than the substrate and a depth greater than the combined thickness of the substrate and the thickest film of semiconductor material to be synthesized, and (3) is positioned horizontally with the recess upward facing; (c) growing an epitaxial layer of the semiconductor material onto the substrate to a thickness of nominally three times that of the pseudomorphic limit of the semiconductor material; (d) raising the temperature of the substrate to a first selected temperature within a temperature range exceeding the melting temperature of the substrate, but below the boiling temperature of the substrate, the melting temperature of the substrate holder, and the melting temperature of the semiconductor material, for a sufficient time to melt the substrate and anneal the synthesized solid nascent layer of the semiconductor material floating on the molten substrate; (e) maintaining the molten substrate at a second selected temperature within said temperature range while resuming the growth of said epitaxial layer of the semiconductor material floating on the molten substrate until the desired thickness of semiconductor material is reached; and (f) reducing the temperature of the substrate holder and material disposed therein to room temperature and removing the wafer comprising said semiconductor material from the substrate holder.
Claim 3
Dependent Claim
37 words
A method of synthesizing a large area wafer of semiconductor material, as described in claim 1, wherein in step (e), said second selected temperature is the temperature within said temperature range to best grow the semiconductor material.
Claim 4
Dependent Claim
35 words
A method of synthesizing a large area wafer of semiconductor material, as described in claim 1, wherein the depth of the recessed region of the substrate holder is at least three times the substrate thickness.
Claim 5
Dependent Claim
92 words
A method of synthesizing a large area wafer of semiconductor material, as described in claim 1, wherein in step (e), the desired thickness of semiconductor to be reached is at least one micrometer, and said method further comprises, between step (e) and step (f), the steps of: lowering the temperature of the substrate to a third temperature below its melting temperature to cause the substrate to solidify; and maintaining the substrate at said third temperature while resuming the growth of the layer of semiconductor material until the final desired thickness is reached.
Claim 6
Dependent Claim
54 words
A method of synthesizing a large area wafer of semiconductor material, as described in claim 1, wherein the substrate holder comprises drain means for draining any molten substance from the holder cavity, and said method further comprises, between step (e) and step (f), the step of draining the molten substrate from the holder cavity.
Claim 7
Dependent Claim
28 words
A method of synthesizing a large area wafer of semiconductor material, as described in claim 1, wherein said semiconductor material is silicon carbide and said substrate is silicon.
Claim 8
Dependent Claim
22 words
A method of synthesizing a large area wafer of semiconductor material, as described in claim 4, wherein said substrate holder is carbon.
Claim 9
Dependent Claim
26 words
A method of synthesizing a large area wafer of semiconductor material, as described in claim 5, wherein said carbon substrate holder is coated with silicon carbide.
Claim 10
Independent Claim
213 words
A method of synthesizing a large area, single crystalline, silicon carbide wafer, which comprises the steps of: (a) disposing a silicon substrate in a substrate holder which (1) melts at a temperature higher than 1850 Celsius, (2) has a recessed region having bottom planar dimensions greater than the substrate and a depth greater than three times the thickness of the substrate, and (3) is positioned horizontally with the recess upward facing within the reaction chamber of a known semiconductor deposition apparatus; (b) growing an n-type epitaxial 3C SiC layer onto the substrate to a thickness between 40 and 50 nanometers; (c) introducing ammonia into the chamber to provide nitrogen as as to maintain the 3C polytype configuration of the SiC layer; (d) raising the temperature to 1675 Celsius to melt the silicon substrate and anneal the synthesized solid nascent 3C SiC layer floating on the molten substrate; (e) securing the ammonia; (f) maintaining the molten substrate at 1675 Celsius while resuming the growth of said 3C SiC layer floating on the molten substrate until the thickness of the 3C SiC layer reaches at least one micrometer; and (g) reducing the temperature of the substrate holder and material disposed therein to room temperature and removing the wafer comprising silicon carbide from the substrate holder.
Claim 11
Independent Claim
213 words
A method of synthesizing a large area, single crystalline, silicon carbide wafer, which comprises the steps of: (a) disposing a silicon substrate in a substrate holder which (1) melts at a temperature higher than 1850 Celsius, (2) has a recessed region having bottom planar dimensions greater than the substrate and a depth greater than three times the thickness of the substrate, and (3) is positioned horizontally with the recess upward facing within the reaction chamber of a known semiconductor deposition apparatus; (b) growing an n-type epitaxial 3C SiC layer onto the substrate to a thickness between 40 and 50 nanometers; (c) introducing ammonia into the chamber to provide nitrogen as as to maintain the 3C polytype configuration of the SiC layer; (d) raising the temperature to 1675 Celsius to melt the silicon substrate and anneal the synthesized solid nascent 3C SiC layer floating on the molten substrate; (e) securing the ammonia; (f) maintaining the molten substrate at 1675 Celsius while resuming the growth of said 3C SiC layer floating on the molten substrate until the thickness of the 3C SiC layer reaches at least one micrometer; and (g) reducing the temperature of the substrate holder and material disposed therein to room temperature and removing the wafer comprising silicon carbide from the substrate holder.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-14 | 1998-05-16 | 1998-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-14 | 2002-05-16 | 2002-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-14 | 2006-05-16 | 2006-11-15 | $7700.00 | Window Closed / Lapsed |