Patent US5361002A successfully refreshed from Google Patents.
US5361002A
Expired / Lapsed
US
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Voltage compensating CMOS input buffer
Assignee: Micron Technology Inc
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Filing: 1993-10-12
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Granted: 1994-11-01
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Expires: 2013-10-12
Abstract
Abstract The CMOS voltage compensating input buffer circuit of the present invention provides a means to stabilize input level trip points and is comprised of a voltage compensating circuit having an input node and an output drive node coupled to an input buffer. The voltage compensating circuit receives its input from a voltage adjusting circuit that follows changes in V CC while its output drive node is coupled to the series connected CMOS input buffer circuit having an input node and an output node. The buffer's input node receives a signal that VIH/VIL trip points will determine if the output is to be a high or a low and the buffer's output node then couples the resultant level to an output buffer circuit comprised of a CMOS inverter which provides the final output drive. The present invention provides trip point levels corresponding to industry standard VIH/VIL levels to accurately determine the corresponding output with operating voltage supplies (regulated or unregulated) operating between 2 V to 7.5 V.
Inventors
- 👤 Stephen L. Casper
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:05
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/003; H03K19/00369; H03K19/00384
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
161 words
A memory device comprising a voltage compensating CMOS input buffer circuit, said voltage compensating CMOS input buffer circuit comprising: first, second and third voltage potentials; a voltage adjusting circuit providing a voltage adjusting output node, said voltage adjusting circuit comprising a plurality of voltage adjusting transistors connected serially and coupled between said first and third voltage potentials, said plurality of voltage adjusting transistors providing said voltage adjusting output node by a common connection between two transistors; a voltage compensating circuit providing a voltage compensating drive node, said voltage compensating circuit coupled to said voltage adjusting output node and said second voltage potential; and an input buffer circuit providing an output node, said input buffer circuit comprising a plurality of input transistors connected serially between said second and third potential sources, each transistor having an input terminal for receiving input signals, said plurality of input transistors providing said output node by a common connection between at least two of the input transistors.
Claim 2
Dependent Claim
161 words
A memory device comprising a voltage compensating CMOS input buffer circuit, said voltage compensating CMOS input buffer circuit comprising: first, second and third voltage potentials; a voltage adjusting circuit providing a voltage adjusting output node, said voltage adjusting circuit comprising a plurality of voltage adjusting transistors connected serially and coupled between said first and third voltage potentials, said plurality of voltage adjusting transistors providing said voltage adjusting output node by a common connection between two transistors; a voltage compensating circuit providing a voltage compensating drive node, said voltage compensating circuit coupled to said voltage adjusting output node and said second voltage potential; and an input buffer circuit providing an output node, said input buffer circuit comprising a plurality of input transistors connected serially between said second and third potential sources, each transistor having an input terminal for receiving input signals, said plurality of input transistors providing said output node by a common connection between at least two of the input transistors.
Claim 3
Dependent Claim
107 words
The circuit as recited in claim 1, wherein said voltage adjusting circuit further comprises: first, second and third transistors, each transistor having an input terminal and first and second output terminals, said first transistor having its first output terminal coupled to said first potential source, its input and second output terminals coupled to said second transistor's first output terminal, said second transistor having its input terminal and second output terminal coupled to said third transistor's first output terminal thereby forming said voltage adjusting output node, said third transistor's input terminal coupled to said first voltage potential and its second output terminal coupled to said third voltage potential.
Claim 4
Dependent Claim
58 words
The circuit as recited in claim 1, wherein said voltage compensating circuit comprises: a transistor having an input terminal and first and second output terminals, said transistor's input terminal coupled to said voltage adjusting output node, its first output terminal coupled to said second voltage potential and its second output terminal coupled to said voltage compensating drive node.
Claim 5
Dependent Claim
118 words
The circuit as recited in claim 1, wherein said input buffer circuit further comprises: first, second and third transistors each transistor having an input terminal and first and second output terminals, said input terminals of all four transistors are coupled together thereby forming an input node, said first transistor's first output terminal coupled to said voltage compensating drive node and its second output terminal coupled to said second transistor's first output terminal, said second transistor's second output terminal coupled to said third transistor's first output terminal thereby forming said output node, said third transistor's second output terminal coupled to said fourth transistor's first output terminal and said fourth transistor's second output terminal coupled to said third voltage potential.
Claim 6
Dependent Claim
42 words
The circuit as recited in claim 1, further comprising and output buffer, wherein said output buffer circuit comprises a logic inverter having an input terminal coupled to said input buffer output node and an output terminal forming said output buffer output node.
Claim 7
Dependent Claim
26 words
The voltage adjusting circuit as recited in claim 2, wherein said first and second transistors are PMOS transistors and said third transistor is an NMOS transistor.
Claim 8
Dependent Claim
16 words
The voltage compensating circuit as recited in claim 3, wherein said transistor is a PMOS transistor.
Claim 9
Dependent Claim
27 words
The input buffer circuit as recited in claim 4, wherein said first and second transistors are PMOS transistors and said third and fourth transistors are NMOS transistors.
Claim 10
Dependent Claim
19 words
The circuit as recited in claim 1, wherein said first voltage potential is equal to said second voltage potential.
Claim 11
Dependent Claim
19 words
The circuit as recited in claim 1, wherein said first voltage potential is greater than said second voltage potential.
Claim 12
Dependent Claim
27 words
The circuit as recited in claim 1, wherein said first voltage potential and said second voltage potential provide a voltage potential between 2 V to 7.5 V.
Claim 13
Dependent Claim
24 words
The circuit as recited in claim 1, wherein said first voltage potential and said second voltage potential provide a voltage potential below 2 V.
Claim 14
Dependent Claim
24 words
The circuit as recited in claim 1, wherein said first voltage potential and said second voltage potential provide a voltage potential above 7.5 V.
Claim 15
Dependent Claim
174 words
A dynamic random access memory device comprising a voltage compensating CMOS input buffer circuit, said voltage compensating CMOS input buffer circuit comprising: first, second and third voltage potentials; a voltage adjusting circuit providing a voltage adjusting output node, said voltage adjusting circuit comprising a plurality of voltage adjusting PMOS and NMOS transistors connected serially and coupled between said first and third voltage potentials, said plurality of serially connected PMOS and NMOS transistors providing said voltage adjusting output node by a common connection between series PMOS and NMOS transistors; a voltage compensating circuit providing a voltage compensating drive node, said voltage compensating circuit coupled to said voltage adjusting output node and said second voltage potential; and an input buffer circuit providing an output node, said input buffer circuit comprising a plurality of input PMOS and NMOS transistors connected serially between said second and third voltage potentials, each transistor having an input terminal for receiving input signals, said plurality of input transistors providing said output node that is common between series PMOS and NMOS input transistors.
Claim 16
Dependent Claim
174 words
A dynamic random access memory device comprising a voltage compensating CMOS input buffer circuit, said voltage compensating CMOS input buffer circuit comprising: first, second and third voltage potentials; a voltage adjusting circuit providing a voltage adjusting output node, said voltage adjusting circuit comprising a plurality of voltage adjusting PMOS and NMOS transistors connected serially and coupled between said first and third voltage potentials, said plurality of serially connected PMOS and NMOS transistors providing said voltage adjusting output node by a common connection between series PMOS and NMOS transistors; a voltage compensating circuit providing a voltage compensating drive node, said voltage compensating circuit coupled to said voltage adjusting output node and said second voltage potential; and an input buffer circuit providing an output node, said input buffer circuit comprising a plurality of input PMOS and NMOS transistors connected serially between said second and third voltage potentials, each transistor having an input terminal for receiving input signals, said plurality of input transistors providing said output node that is common between series PMOS and NMOS input transistors.
Claim 17
Dependent Claim
109 words
The circuit as recited in claim 14, wherein said voltage adjusting circuit further comprises: first and second PMOS transistors and an NMOS transistor, each transistor having an gate terminal, a source terminal and a drain terminal, said first PMOS transistor having its source terminal coupled to said first potential source and its gate and drain terminals coupled to said second PMOS transistor's source terminal, said second PMOS transistor having its gate and drain terminals coupled to said NMOS transistor's drain terminal thereby forming said voltage adjusting output node, said NMOS transistor's gate terminal coupled to said first voltage potential and its source terminal coupled to said third voltage potential.
Claim 18
Dependent Claim
58 words
The circuit as recited in claim 14, wherein voltage compensating circuit comprises: a PMOS transistor having a gate terminal, a source terminal and a drain terminal, said PMOS transistor's gate terminal coupled to said voltage adjusting output node, its source terminal coupled to said second voltage potential and its drain terminal coupled to said voltage compensating drive node.
Claim 19
Dependent Claim
123 words
The circuit as recited in claim 14, wherein said input buffer circuit further comprises: first and second PMOS transistors and first and second NMOS transistor, each transistor having a gate terminal, a source terminal and a drain terminal, said gate terminals of all four transistors are coupled together thereby forming an input node, said first PMOS transistor's source terminal coupled to said voltage compensating drive node and its drain terminal coupled to said second PMOS transistor's source terminal, said second PMOS transistor's drain terminal coupled to said first NMOS transistor's drain terminal thereby forming said output node, said first transistor's source terminal coupled to said second NMOS transistor's drain terminal and said second NMOS transistor's source terminal coupled to said third voltage potential.
Claim 20
Dependent Claim
19 words
The circuit as recited in claim 14, wherein said first voltage potential is equal to said second voltage potential.
Claim 21
Dependent Claim
19 words
The circuit as recited in claim 14, wherein said first voltage potential is greater than said second voltage potential.
Claim 22
Dependent Claim
27 words
The circuit as recited in claim 14, wherein said first potential source and said second potential source provide a voltage potential between 2 V to 7.5 V.
Claim 23
Dependent Claim
24 words
The circuit as recited in claim 14, wherein said first voltage potential and said second voltage potential provide a voltage potential below 2 V.
Claim 24
Dependent Claim
24 words
The circuit as recited in claim 14, wherein said first voltage potential and said second voltage potential provide a voltage potential above 7.5 V.
References Cited (Backward Citations)
US4700089A
Cited
US5220534A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-10-31 | 1998-05-02 | 1998-11-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-31 | 2002-05-02 | 2002-11-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-31 | 2006-05-02 | 2006-11-01 | $7700.00 | Window Closed / Lapsed |