Patent US5360753A successfully refreshed from Google Patents.
US5360753A
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Manufacturing method for a semiconductor isolation region
Assignee: Samsung Electronics Co Ltd
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Filing: 1993-09-27
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Granted: 1994-11-01
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Expires: 2013-09-27
Abstract
Abstract In an element isolation method of a semiconductor device which can form an element isolation region having a flat surface without regard to the width of the element isolation region, and whose width is below the resolution limit, an insulating film having an aperture in order to define the element isolation region is formed on the semiconductor wafer, wherein an oxidizable material layer is deposited and then first spacers are formed on the sidewalls of the aperture. Then, a thermal oxide film is formed over the entire semiconductor wafer, excluding a first-spacer-formed region, and the first spacer is removed. The wafer surface is exposed to the lower part of the removed first spacer region, and then the portion of the semiconductor wafer below the exposed region is etched to thereby form a trench. After that, an element isolation region is formed by filling up the trench and removing the insulating film around tile trench. Additionally, a second spacer is formed on the sidewalls of the first spacer so as to further reduce the element isolation region. Accordingly, a highly integrated semiconductor device can be accomplished by forming an element isolation region whose size is below the resolution limit and whereby good element isolation characteristics are provided.
Inventors
- 👤 Tai-seo Park
- 👤 Yun-gi Kim
- 👤 Dong-chul Park
- 👤 Sung-tae Ahn
- 👤 Byeong-yeol Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:59
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/693; H10P50/695; H10W10/012; H10W10/0121; H10W10/0124; H10W10/0128; H10W10/0145; H10W10/0147; H10W10/041; H10W10/10; H10W10/13; H10W10/17; H10W10/40
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
131 words
A method for manufacturing an element isolation region of a semiconductor device, comprising the steps of: (a) forming an insulating layer having at least one aperture on a semiconductor wafer; (b) forming an oxidizable material layer over said insulating layer including said at least one aperture; (c) forming a first spacer on the oxidizable material at the peripheral surface of said at least one aperture; (d) forming a thermal oxide film by thermally oxidizing said oxidizable material layer excluding a portion thereof masked by said first spacer; (e) removing said first spacer and the resulting underlying material thereby leaving a portion of said semiconductor wafer exposed; and (f) forming a trench in said semiconductor wafer by etching said exposed portion of said semiconductor wafer to thereby define an element isolation region.
Claim 2
Independent Claim
131 words
A method for manufacturing an element isolation region of a semiconductor device, comprising the steps of: (a) forming an insulating layer having at least one aperture on a semiconductor wafer; (b) forming an oxidizable material layer over said insulating layer including said at least one aperture; (c) forming a first spacer on the oxidizable material at the peripheral surface of said at least one aperture; (d) forming a thermal oxide film by thermally oxidizing said oxidizable material layer excluding a portion thereof masked by said first spacer; (e) removing said first spacer and the resulting underlying material thereby leaving a portion of said semiconductor wafer exposed; and (f) forming a trench in said semiconductor wafer by etching said exposed portion of said semiconductor wafer to thereby define an element isolation region.
Claim 3
Dependent Claim
30 words
A method for manufacturing an element isolation region according to claim 1, wherein said step of forming an insulating layer comprises stacking a nitride film on a pad oxide film.
Claim 4
Dependent Claim
44 words
A method for manufacturing an element isolation region according to claim 2, further comprising a step of etching a peripheral portion of said pad oxide film adjacent to said aperture to obtain an undercut region, before said step of forming an oxidizable material layer.
Claim 5
Dependent Claim
27 words
A method for manufacturing an element isolation region according to claim 1, wherein said step of forming an oxidizable material layer consists of forming a polysilicon layer.
Claim 6
Dependent Claim
19 words
A method for manufacturing an element isolation region according to claim 1, wherein said first spacer is a nitride.
Claim 7
Dependent Claim
35 words
A method for manufacturing an element isolation region according to claim 1, further comprising the steps of: (a) filling said trench with an insulating material; and (b) removing said insulating material from said semiconductor wafer.
Claim 8
Independent Claim
191 words
A method for forming an element isolation region on a semiconductor wafer, comprising the steps of: (a) forming an insulating film having an aperture on said wafer which exposes a portion thereof, said insulating film having a lower pad oxide film portion and an upper nitride film portion; (b) forming an undercut region under said nitride film portion by etching said pad oxide film adjacent said aperture; (c) forming an oxidizable material layer on said insulating film and said exposed portion of said semiconductor wafer in said aperture; (d) forming a first spacer on the oxidizable material at the a sidewall of said aperture; (e) thermally oxidizing said oxidizable material layer, using said first spacer as an anti-oxidizing mask; (f) removing said first spacer to thereby expose an unoxidized portion of said oxidizable material layer; (g) forming a trench by etching said exposed portion of said oxidizable material layer and a portion of said semiconductor wafer therebelow using said thermal oxide film as an etching mask; (h) filling said trench with an insulating material; and (i) removing said insulating material formed on said semiconductor wafer to obtain an element isolation region.
Claim 9
Independent Claim
191 words
A method for forming an element isolation region on a semiconductor wafer, comprising the steps of: (a) forming an insulating film having an aperture on said wafer which exposes a portion thereof, said insulating film having a lower pad oxide film portion and an upper nitride film portion; (b) forming an undercut region under said nitride film portion by etching said pad oxide film adjacent said aperture; (c) forming an oxidizable material layer on said insulating film and said exposed portion of said semiconductor wafer in said aperture; (d) forming a first spacer on the oxidizable material at the a sidewall of said aperture; (e) thermally oxidizing said oxidizable material layer, using said first spacer as an anti-oxidizing mask; (f) removing said first spacer to thereby expose an unoxidized portion of said oxidizable material layer; (g) forming a trench by etching said exposed portion of said oxidizable material layer and a portion of said semiconductor wafer therebelow using said thermal oxide film as an etching mask; (h) filling said trench with an insulating material; and (i) removing said insulating material formed on said semiconductor wafer to obtain an element isolation region.
Claim 10
Dependent Claim
29 words
A method for forming an element isolation region according to claim 7, wherein further including a step of forming a thermal oxide on an interior surface of said trench.
Claim 11
Dependent Claim
45 words
A method for forming an element isolation region according to claim 7, further comprising the steps of: (a) removing said thermal oxide film functioning as an etching mask, before filling said trench; and (b) forming an oxide film on an inner surface of said trench.
Claim 12
Dependent Claim
36 words
A method for forming an element isolation region according to claim 9, further comprising the steps of: (a) removing said nitride film; and (b) forming an insulating layer over the resultant structure, thereby filling said trench.
Claim 13
Dependent Claim
25 words
A method for forming an element isolation region according to claim 10, wherein said step of forming an insulating layer includes forming a polysilicon layer.
Claim 14
Dependent Claim
68 words
A method for forming an element isolation region according to claim 9, further comprising the steps of: (a) forming an oxidizable insulating material layer over the resultant structure after forming said oxide film; (b) etching back said oxidizable insulating material layer so that portions thereof remain in said trench to obtain an insulating material pattern on said element isolation region; and (c) partially oxidizing said insulating material pattern.
Claim 15
Dependent Claim
187 words
A manufacturing method of an element isolation region on a semiconductor wafer, comprising the steps of: (a) forming an insulating layer having at least one aperture on a semiconductor wafer, said aperture leaving a portion of said semiconductor wafer exposed; (b) forming a first spacer on a sidewall of said at least one aperture; (c) forming an oxidizable material film over said insulating layer, said first spacer, and said exposed portion of said semiconductor wafer; (d) forming a second spacer in said aperture on said oxidizable material, said second spacer being disposed inwardly relative to said first spacer; (e) forming a first thermal oxide film portion in a region of said aperture surrounded by said second spacer and forming a second thermal oxide film portion over said insulating layer by thermal oxidation, using said second spacer as an anti-oxidant mask to thereby leave an oxidizable material film portion thereunder; (f) removing said second spacer to expose said oxidizable material film portion; and (g) etching said oxidizable material film portion and a portion of said semiconductor wafer immediately thereunder to obtain a trench defining said element isolation region.
Claim 16
Dependent Claim
187 words
A manufacturing method of an element isolation region on a semiconductor wafer, comprising the steps of: (a) forming an insulating layer having at least one aperture on a semiconductor wafer, said aperture leaving a portion of said semiconductor wafer exposed; (b) forming a first spacer on a sidewall of said at least one aperture; (c) forming an oxidizable material film over said insulating layer, said first spacer, and said exposed portion of said semiconductor wafer; (d) forming a second spacer in said aperture on said oxidizable material, said second spacer being disposed inwardly relative to said first spacer; (e) forming a first thermal oxide film portion in a region of said aperture surrounded by said second spacer and forming a second thermal oxide film portion over said insulating layer by thermal oxidation, using said second spacer as an anti-oxidant mask to thereby leave an oxidizable material film portion thereunder; (f) removing said second spacer to expose said oxidizable material film portion; and (g) etching said oxidizable material film portion and a portion of said semiconductor wafer immediately thereunder to obtain a trench defining said element isolation region.
Claim 17
Dependent Claim
54 words
A manufacturing method of an element isolation region on a semiconductor wafer according to claim 13, further comprising the steps of: (a) forming a silicon nitride film in said trench; (b) filling said trench having said silicon nitride film therein with an oxidizable material; and (c) partially oxidizable said oxidizing material in said trench.
Claim 18
Dependent Claim
23 words
A manufacturing method of an element isolation region on a semiconductor wafer according to claim 14, wherein said oxidizable material is a polysilicon.
Claim 19
Dependent Claim
36 words
A manufacturing method of an element isolation region on a semiconductor wafer according to claim 13, wherein said first spacer is made from a material selected from the group consisting of silicon oxide and silicon nitride.
Claim 20
Dependent Claim
29 words
A manufacturing method of an element isolation region on a semiconductor wafer according to claim 13, wherein said insulating film and said second spacer are made of silicon nitride.
Claim 21
Independent Claim
183 words
A method of manufacturing an element isolation region on a semiconductor wafer, comprising the steps of: (a) forming a compound material layer having an aperture which exposes a portion of said semiconductor wafer; (b) forming a first spacer on a sidewall of said aperture; (c) forming an oxidizable material layer over said compound material layer, said first spacer, and said exposed portion of said semiconductor wafer; (d) forming a second spacer on a portion of said oxidizable material layer covering said first spacer; (e) thermally oxidizing said oxidizable material layer using said second spacer as an anti-oxidation mask and a portion of said semiconductor wafer in said aperture below said oxidizable material layer to obtain first and second thermal oxide film portions, respectively; (f) removing said second spacer; (g) removing said first thermal oxide film portion; (h) forming a trench by removing a remaining portion of said oxidizable material layer masked by said second spacer and anisotropically etching said semiconductor wafer therebelow; (i) forming an insulating film within said trench; and (j) depositing an insulating material in said trench having said insulating film.
Claim 22
Independent Claim
183 words
A method of manufacturing an element isolation region on a semiconductor wafer, comprising the steps of: (a) forming a compound material layer having an aperture which exposes a portion of said semiconductor wafer; (b) forming a first spacer on a sidewall of said aperture; (c) forming an oxidizable material layer over said compound material layer, said first spacer, and said exposed portion of said semiconductor wafer; (d) forming a second spacer on a portion of said oxidizable material layer covering said first spacer; (e) thermally oxidizing said oxidizable material layer using said second spacer as an anti-oxidation mask and a portion of said semiconductor wafer in said aperture below said oxidizable material layer to obtain first and second thermal oxide film portions, respectively; (f) removing said second spacer; (g) removing said first thermal oxide film portion; (h) forming a trench by removing a remaining portion of said oxidizable material layer masked by said second spacer and anisotropically etching said semiconductor wafer therebelow; (i) forming an insulating film within said trench; and (j) depositing an insulating material in said trench having said insulating film.
Claim 23
Dependent Claim
33 words
A method of manufacturing an element isolation region on a semiconductor wafer according to claim 18, wherein said compound material layer comprises a pad oxide film portion and a silicon nitride film portion.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-10-31 | 1998-05-02 | 1998-11-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-31 | 2002-05-02 | 2002-11-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-31 | 2006-05-02 | 2006-11-01 | $7700.00 | Window Closed / Lapsed |