US5358743A
Expired / Lapsed
US
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Selective and blanket chemical vapor deposition of Cu from (β-diketonate)Cu(L)n by silica surface modification
Assignee: University of New Mexico
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Filing: 1992-11-24
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Granted: 1994-10-25
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Expires: 2012-11-24
Abstract
Abstract In microelectronic manufacture, vertical interconnects in integrated circuits are made by the selective deposition of copper onto SiO2, which is controlled by reacting the SiO2 surface with chlorotrimethylsilane or dimethyldichlorosilane. These silanes interact with the surface hydroxyl groups to reduce the number of sites at which (hfac)Cu(VTMS) can adsorb and react, therefore providing selectivity.
Inventors
- 👤 Mark J. Hampden-Smith
- 👤 Toivo T. Kodas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 12:24
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/04; C23C16/02; C23C16/0272; C23C16/06; C23C16/18; H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
89 words
The method of selectively depositing copper onto exposed metallic substrates partially covered by a layer of silica, said method comprising the following steps: a. partially covering a metallic substrate with a layer of silica such that the metallic substrate is exposed partially; b. treating the silica with a functionalized organosilane to render the silica unreceptive to the deposition of copper thereon; and c. subjecting the treated silica and the exposed metallic substrate to a precursor material containing copper, whereby the copper is deposited only onto the exposed metallic substrate.
Claim 2
Independent Claim
89 words
The method of selectively depositing copper onto exposed metallic substrates partially covered by a layer of silica, said method comprising the following steps: a. partially covering a metallic substrate with a layer of silica such that the metallic substrate is exposed partially; b. treating the silica with a functionalized organosilane to render the silica unreceptive to the deposition of copper thereon; and c. subjecting the treated silica and the exposed metallic substrate to a precursor material containing copper, whereby the copper is deposited only onto the exposed metallic substrate.
Claim 3
Dependent Claim
27 words
The method of claim 1 wherein said functionalized organosilane includes a functional group comprising any one or a combination of a halide, an alkoxide, or an amide.
Claim 4
Dependent Claim
12 words
The method of claim 2 wherein said functionalized organosilane is a chlorosilane.
Claim 5
Dependent Claim
13 words
The method of claim 2 wherein said functionalized organosilane is trimethylchlorosilane or dimethyldichlorosilane.
Claim 6
Dependent Claim
24 words
The method of claim 1 wherein said precursor material is one or more compounds selected from the group consisting of (hfac)Cu(triorganophosphine), (hfac)Cu(alkene) and (hfac)Cu(alkyne).
Claim 7
Dependent Claim
27 words
The method of claim 5 wherein said precursor material is one or more compounds selected from the group consisting of (hfac)Cu(PMe 3 ), (hfac)Cu(1,5-COD), (hfac)Cu(VTMS) and (hfac)CU(2-butyne).
Claim 8
Dependent Claim
24 words
The method of claim 2 wherein said precursor material is one or more compounds selected from the group consisting of (hfac)Cu(triorganophosphine), (hfac)Cu(alkene) and (hfac)Cu(alkyne).
Claim 9
Dependent Claim
25 words
The method of claim 7 wherein said precursor material is one or more compounds selected from the group consisting of (hfac)Cu(PMe3), (hfac)Cu(1,5-COD), (hfac)Cu(VTMS) and (hfac)Cu(2-butyne).
Claim 10
Dependent Claim
24 words
The method of claim 1 wherein the said precursor material is heated to about 45° C. in ambient pressure of about 10 -3 torr.
Claim 11
Dependent Claim
26 words
The method of claim 1 wherein the step of subjecting the silica and exposed metallic substrate is carried out in the presence of N 2 .
Claim 12
Dependent Claim
20 words
The method of claim 1 wherein the step of treating comprises evaporating said functionalized organosilane for deposition onto the silica.
Claim 13
Dependent Claim
18 words
The method of claim 11 wherein said step is carded out in the presence of N 2 .
Claim 14
Dependent Claim
38 words
The method of claim 12 wherein said step is carried out in the presence of at least an equal quantity of the substance in the form of a functionalized chlorosilane relative to the quantity of N 2 .
Claim 15
Dependent Claim
14 words
The method of claim 11 wherein the chlorosilane consists of either trimethylchlorosilane or dimethyldichlorosilane.
Claim 16
Independent Claim
68 words
The method of selectively depositing copper onto exposed metallic substrates partially covered by a layer of silica, said method comprising the following steps: a. treating the silica with a functionalized organosilane to render the silica unreceptive to the deposition of copper thereon, and b. subjecting the silica and the exposed metallic substrate to a precursor material containing cooper, whereby the copper is deposited only onto the metallic substrate.
Claim 17
Independent Claim
68 words
The method of selectively depositing copper onto exposed metallic substrates partially covered by a layer of silica, said method comprising the following steps: a. treating the silica with a functionalized organosilane to render the silica unreceptive to the deposition of copper thereon, and b. subjecting the silica and the exposed metallic substrate to a precursor material containing cooper, whereby the copper is deposited only onto the metallic substrate.
Claim 18
Dependent Claim
28 words
The method according to claim 15, wherein the functional group of said functionalized organosilane is any one or a combination of a halide, an alkoxide or an amide.
References Cited (Backward Citations)
US5100501A
Cited
US5098516A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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