US5357129A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state imaging device having high-sensitivity and low-noise characteristics by reducing electrostatic capacity of interconnection
Assignee: Sharp Corp
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Filing: 1993-11-24
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Granted: 1994-10-18
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Expires: 2013-11-24
Abstract
Abstract There is provided a solid state imaging device having high-sensitivity, low-noise characteristics by reducing electrostatic capacity relating to interconnection. The solid state imaging device includes a photoelectric conversion section, a transfer section, a floating diffusion layer for receiving signal charges from the transfer section, and an output transistor having a gate electrode connected to the floating diffusion layer via an interconnection. A source and a drain of the output transistor are provided commonly within a flat p-type well of relatively thin concentration in which the photoelectric conversion section, the transfer section, and the floating diffusion layer are also provided. It becomes possible to reduce an interconnection capacity, a gate-drain capacity, and a gate-channel capacity, to increase gain of a source follower circuit, to relax electric fields in the vicinity of the drain, and to prevent electric charges from inflow and outflow from substrate, without any increase in the fabrication process. As a result, a high-sensitivity, low-noise solid state imaging device can be offered.
Inventors
- 👤 Shinya Kamimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:37
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/454; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153; H10W; H10W20/00; H10W20/40; H10W20/495
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
259 words
A solid state imaging device comprising: a semiconductor substrate of a first conductive type; a well of a second conductive type provided on the semiconductor substrate, the second conductive type of the well being the conductive type reverse to the first conductive type of the semiconductor substrate; a photoelectric conversion section having a first semiconductor layer of the first conductive type provided within the well and serving for converting incident light into signal charges at a junction plane between the first semiconductor layer and the well; a transfer section having a second semiconductor layer of the first conductive type provided within the well and a third semiconductor layer of the second conductive type provided under the second semiconductor layer and thicker in concentration of dopants than the well, and serving for transferring signal charges received from the photoelectric conversion section through the second semiconductor layer; a floating diffusion layer being comprised of a fourth semiconductor layer of the first conductive type provided within the well and serving for receiving the signal charges outputted by the transfer section; and a driver transistor having a gate electrode connected to the floating diffusion layer via an interconnection and serving for outputting a signal corresponding to a potential of the floating diffusion layer, wherein channel, source, and drain regions of the driver transistor are provided within the well, and wherein under the source and drain regions of the driver transistor there is further provided a fifth semiconductor layer of the second conductive type which is thicker in concentration of dopants than the well.
Claim 2
Dependent Claim
259 words
A solid state imaging device comprising: a semiconductor substrate of a first conductive type; a well of a second conductive type provided on the semiconductor substrate, the second conductive type of the well being the conductive type reverse to the first conductive type of the semiconductor substrate; a photoelectric conversion section having a first semiconductor layer of the first conductive type provided within the well and serving for converting incident light into signal charges at a junction plane between the first semiconductor layer and the well; a transfer section having a second semiconductor layer of the first conductive type provided within the well and a third semiconductor layer of the second conductive type provided under the second semiconductor layer and thicker in concentration of dopants than the well, and serving for transferring signal charges received from the photoelectric conversion section through the second semiconductor layer; a floating diffusion layer being comprised of a fourth semiconductor layer of the first conductive type provided within the well and serving for receiving the signal charges outputted by the transfer section; and a driver transistor having a gate electrode connected to the floating diffusion layer via an interconnection and serving for outputting a signal corresponding to a potential of the floating diffusion layer, wherein channel, source, and drain regions of the driver transistor are provided within the well, and wherein under the source and drain regions of the driver transistor there is further provided a fifth semiconductor layer of the second conductive type which is thicker in concentration of dopants than the well.
Claim 3
Dependent Claim
24 words
A solid state imaging device as claimed in claim 1, wherein the fifth semiconductor layer and the third semiconductor layer are the same layer.
Claim 4
Dependent Claim
287 words
A solid state imaging device comprising: a semiconductor substrate of a first conductive type; a well of a second conductive type provided on the semiconductor substrate, the second conductive type of the well being the conductive type reverse to the first conductive type of the semiconductor substrate; a photoelectric conversion section having a first semiconductor layer of the first conductive type provided within the well and serving for converting incident light into signal charges at a junction plane between the first semiconductor layer and the well; a transfer section having a second semiconductor layer of the first conductive type provided within the well and a third semiconductor layer of the second conductive type provided under the second semiconductor layer and thicker in concentration of dopants than the well, and serving for transferring signal charges received from the photoelectric conversion section through the second semiconductor layer; a floating diffusion layer being comprised of a fourth semiconductor layer of the first conductive type provided within the well and serving for receiving the signal charges outputted by the transfer section; and a driver transistor having a gate electrode connected to the floating diffusion layer via an interconnection and serving for outputting a signal corresponding to a potential of the floating diffusion layer, wherein channel, source, and drain regions of the driver transistor are provided within the well, and wherein the source and drain regions of the driver transistor are comprised of a fifth semiconductor layer of the first conductive type, and a sixth semiconductor layer of the first conductive type which is provided under the fifth semiconductor layer and between the channel region and the fifth semiconductor layer and is thinner in concentration of dopants than the fifth semiconductor layer.
Claim 5
Dependent Claim
287 words
A solid state imaging device comprising: a semiconductor substrate of a first conductive type; a well of a second conductive type provided on the semiconductor substrate, the second conductive type of the well being the conductive type reverse to the first conductive type of the semiconductor substrate; a photoelectric conversion section having a first semiconductor layer of the first conductive type provided within the well and serving for converting incident light into signal charges at a junction plane between the first semiconductor layer and the well; a transfer section having a second semiconductor layer of the first conductive type provided within the well and a third semiconductor layer of the second conductive type provided under the second semiconductor layer and thicker in concentration of dopants than the well, and serving for transferring signal charges received from the photoelectric conversion section through the second semiconductor layer; a floating diffusion layer being comprised of a fourth semiconductor layer of the first conductive type provided within the well and serving for receiving the signal charges outputted by the transfer section; and a driver transistor having a gate electrode connected to the floating diffusion layer via an interconnection and serving for outputting a signal corresponding to a potential of the floating diffusion layer, wherein channel, source, and drain regions of the driver transistor are provided within the well, and wherein the source and drain regions of the driver transistor are comprised of a fifth semiconductor layer of the first conductive type, and a sixth semiconductor layer of the first conductive type which is provided under the fifth semiconductor layer and between the channel region and the fifth semiconductor layer and is thinner in concentration of dopants than the fifth semiconductor layer.
Claim 6
Dependent Claim
24 words
A solid state imaging device as claimed in claim 3, wherein the second semiconductor layer and the sixth semiconductor layer are the same layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-10-17 | 1998-04-18 | 1998-10-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-17 | 2002-04-18 | 2002-10-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-17 | 2006-04-18 | 2006-10-18 | $7700.00 | Window Closed / Lapsed |