Abstract A CCD solid state image sensing device (A) is described in which a photosensitive section is constructed by a photodiode formed by a PN-junction between a first P-type well region (2) and an N-type impurity diffusion region (3) formed on an N-type silicon substrate (1). The N-type impurity diffusion region (3) is formed by ion implantation of a single substance of arsenic (As). With this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with known image sensing screens, can be reduced. The n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing this CCD solid state image sensing device also is disclosed.
A CCD solid state image sensing device (A) in which a photo-sensitive section formed of an N-type impurity diffusion region (3) is formed within a P-type substrate (2) or within a P-type impurity diffusion region in correspondence with a pixel, characterized in that said N-type impurity diffusion region (3) is formed by impurity diffusion of single substance of arsenic.
Claim 2
Independent Claim
138 words
A method of manufacturing a CCD solid state image sensing device comprising the steps of: (a) forming a first insulating layer (9) made of SiO₂ on a P-type substrate (2) or on a P-type impurity diffusion region; (b) forming a second insulating layer (10) made of Si₃N₄ on said first insulating layer; (c) forming a third insulating layer (11) made of SiO₂ on said second insulating layer; (d) removing said second and third insulating layers formed on said photo-sensitive section; (e) forming a transfer electrode (13) on said third insulating layer; (f) implanting arsenic into said P-type substrate or into said P-type impurity diffusion region in correspondence with a pixel by using said transfer electrode (13) as a mask; and (g) carrying out a heat treatment in a nitrogen atmosphere to form said N-type impurity diffusion region (3).
Claim 3
Dependent Claim
23 words
The method according to claim 2, in which said arsenic is implanted at position 0.3 to 0.4 µm deep from the substrate surface.
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