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Patent EP0503666A2 successfully refreshed from Google Patents.
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EP0503666A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

CCD solid state image sensing device

Assignee: Sony Corp
•
Filing: 1992-03-13
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Granted: —
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Expires: 2012-03-13
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Abstract

Abstract A CCD solid state image sensing device (A) is described in which a photosensitive section is constructed by a photodiode formed by a PN-junction between a first P-type well region (2) and an N-type impurity diffusion region (3) formed on an N-type silicon substrate (1). The N-type impurity diffusion region (3) is formed by ion implantation of a single substance of arsenic (As). With this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with known image sensing screens, can be reduced. The n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing this CCD solid state image sensing device also is disclosed.

Inventors

  • 👤 Takahisa Kusaka
  • 👤 Hideo Kanbe
  • 👤 Akio Izumi
  • 👤 Hideshi Abe
  • 👤 Masanori Ohashi
  • 👤 Atsuhi Sony Corporation Asai

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-09 04:05
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/452; H10D44/462; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153; H10F77/00; H10F77/10; H10F77/12; H10F77/122; H10F77/1223; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S438/00; Y10S438/909

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 59 words
A CCD solid state image sensing device (A) in which a photo-sensitive section formed of an N-type impurity diffusion region (3) is formed within a P-type substrate (2) or within a P-type impurity diffusion region in correspondence with a pixel, characterized in that said N-type impurity diffusion region (3) is formed by impurity diffusion of single substance of arsenic.
Claim 2
Independent Claim 138 words
A method of manufacturing a CCD solid state image sensing device comprising the steps of: (a) forming a first insulating layer (9) made of SiO₂ on a P-type substrate (2) or on a P-type impurity diffusion region; (b) forming a second insulating layer (10) made of Si₃N₄ on said first insulating layer; (c) forming a third insulating layer (11) made of SiO₂ on said second insulating layer; (d) removing said second and third insulating layers formed on said photo-sensitive section; (e) forming a transfer electrode (13) on said third insulating layer; (f) implanting arsenic into said P-type substrate or into said P-type impurity diffusion region in correspondence with a pixel by using said transfer electrode (13) as a mask; and (g) carrying out a heat treatment in a nitrogen atmosphere to form said N-type impurity diffusion region (3).
Claim 3
Dependent Claim 23 words
The method according to claim 2, in which said arsenic is implanted at position 0.3 to 0.4 µm deep from the substrate surface.

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