← Back to Patent Explorer
US5355385A Expired / Lapsed US ⏱️ 0.0 years remaining

Laser diode device having a protective layer on its light-emitting end face

Assignee: Fuji Electric Co Ltd
•
Filing: 1991-11-06
•
Granted: 1994-10-11
•
Expires: 2011-11-06
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A laser diode in which a laser diode chip having a light-emitting end face is resin-encapsulated by means of an encapsulating resin layer constituted by an epoxy-based resin or the like. An end-face-breakage preventing layer formed of a silicon-based resin having a high coefficient of light absorption in the wavelength band of a laser beam and a high bond energy is formed on the light-emitting end face. The end-face-breakage preventing layer 10 has a thickness of approximately 20 to 30 μm.

Inventors

  • 👤 Akira Amano
  • 👤 Yoichi Shindo
  • 👤 Nobutaka Suganuma
  • 👤 Katsue Nakata

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 17:53
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/84; G; G11; G11B; G11B7/00; G11B7/12; G11B7/123; G11B7/125; G11B7/127; G11B7/22; H01; H01S; H01S5/00; H01S5/02; H01S5/022; H01S5/023; H01S5/0232; G11B7/08; G11B7/09; G11B7/0908; H01S5/02208; H01S5/02212; H01S5/02218; H01S5/02234; H01S5/028; H01S5/0282; H01S5/0283; H10W; H10W72/00; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W90/00; H10W90/701; H10W90/751; H10W90/756

Claims Analysis

Total Claims: 18
Claim 1
Independent Claim 99 words
A laser diode device comprising: a laser diode chip encapsulated with a resin, the laser diode chip having at least one light-emitting end face; and an end-face-breakage preventing layer made of an organic resin and disposed on the light-emitting end face, the end-face-breakage preventing layer having a thickness of at least 5 μm, and the organic resin having a low coefficient of light absorption in a wavelength operation region of the laser diode and a dissociation energy of at least 90 kcal/mol, the dissociation energy of the organic resin being greater than a dissociation energy of the encapsulating resin.
Claim 2
Dependent Claim 99 words
A laser diode device comprising: a laser diode chip encapsulated with a resin, the laser diode chip having at least one light-emitting end face; and an end-face-breakage preventing layer made of an organic resin and disposed on the light-emitting end face, the end-face-breakage preventing layer having a thickness of at least 5 μm, and the organic resin having a low coefficient of light absorption in a wavelength operation region of the laser diode and a dissociation energy of at least 90 kcal/mol, the dissociation energy of the organic resin being greater than a dissociation energy of the encapsulating resin.
Claim 3
Dependent Claim 28 words
A laser diode device according to claim 1, wherein the end-face-breakage preventing layer is made of an organic resin selected from a silicon-based resin and an acrylic resin.
Claim 4
Dependent Claim 18 words
A laser diode device according to claim 2, wherein the silicon-based resin has dimethylpolysiloxane as its principal component.
Claim 5
Dependent Claim 16 words
A laser diode device according to claim 2, wherein the acrylic resin is polymethyl methacrylate resin.
Claim 6
Dependent Claim 26 words
A laser diode device according to claim 1, wherein the thickness of the end-face-breakage preventing layer is in the range of approximately 20 to 30 μm.
Claim 7
Dependent Claim 26 words
A laser diode device according to claim 2, wherein the thickness of the end-face-breakage preventing layer is in the range of approximately 20 to 30 μm.
Claim 8
Dependent Claim 26 words
A laser diode device according to claim 3, wherein the thickness of the end-face-breakage preventing layer is in the range of approximately 20 to 30 μm.
Claim 9
Dependent Claim 26 words
A laser diode device according to claim 4, wherein the thickness of the end-face-breakage preventing layer is in the range of approximately 20 to 30 μm.
Claim 10
Dependent Claim 72 words
A laser diode device comprising: a laser diode chip having at least one light-emitting end face; a resin encapsulating the laser diode chip; and an end-face-breakage preventing layer disposed between the light-emitting end face and the encapsulating resin, the end-face-breakage preventing layer having a thickness of at least 5 μm and being made of inorganic materials having a low coefficient of light absorption in a wavelength operating region of the laser diode.
Claim 11
Dependent Claim 72 words
A laser diode device comprising: a laser diode chip having at least one light-emitting end face; a resin encapsulating the laser diode chip; and an end-face-breakage preventing layer disposed between the light-emitting end face and the encapsulating resin, the end-face-breakage preventing layer having a thickness of at least 5 μm and being made of inorganic materials having a low coefficient of light absorption in a wavelength operating region of the laser diode.
Claim 12
Dependent Claim 28 words
A laser diode device according to claim 9, wherein a principal component of the end-face-breakage preventing layer is an oxide selected from aluminum oxide and a silicon oxide.
Claim 13
Dependent Claim 21 words
A laser diode device according to claim 9, wherein a principal component of the end-face-breakage preventing layer is a low-melting glass.
Claim 14
Dependent Claim 26 words
A laser diode device according to claim 9, wherein the thickness of the end-face-breakage preventing layer is in the range of approximately 20 to 30 μm.
Claim 15
Dependent Claim 26 words
A laser diode device according to claim 10, wherein the thickness of the end-face-breakage preventing layer is in the range of approximately 20 to 30 μm.
Claim 16
Dependent Claim 26 words
A laser diode device according to claim 11, wherein the thickness of the end-face-breakage preventing layer is in the range of approximately 20 to 30 μm.
Claim 17
Dependent Claim 67 words
A laser diode device comprising: a laser diode chip having at least one light-emitting end face; a resin encapsulating the laser diode chip; and an end-face-breakage preventing layer disposed between the light-emitting end face and the encapsulating resin, the end-face-breakage preventing layer having a thickness of at least 5 μm and having a low coefficient of light absorption in a wavelength operating region of the laser diode.
Claim 18
Dependent Claim 67 words
A laser diode device comprising: a laser diode chip having at least one light-emitting end face; a resin encapsulating the laser diode chip; and an end-face-breakage preventing layer disposed between the light-emitting end face and the encapsulating resin, the end-face-breakage preventing layer having a thickness of at least 5 μm and having a low coefficient of light absorption in a wavelength operating region of the laser diode.

References Cited (Backward Citations)

US4951291A Cited
US4852112A Cited
US4985370A Cited
US4975922A Cited
US4951292A Cited
US4962985A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-10-10 1998-04-11 1998-10-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-10-10 2002-04-11 2002-10-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-10-10 2006-04-11 2006-10-11 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag