US5354714A
Expired / Lapsed
US
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Method of forming a vacuum micro-chamber for encapsulating a microelectronics device
Assignee: Texas Instruments Inc
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Filing: 1993-08-26
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Granted: 1994-10-11
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Expires: 2013-08-26
Abstract
Abstract A method of forming a vacuum micro-chamber for encapsulating a microelectronics device in a vacuum processing chamber comprises the steps of forming a microelectronics device (14) on a substrate base (30). The next step is to cover microelectronics device (14) with an organic spacer such as photoresist in a form having a plurality of protrusions, such as a star shape form (36). The next step is to cover the organic spacer and substrate base (30) with the metal layer (24) so that the metal layer covers all of the organic spacer except for a predetermined number of access apertures (34) to the organic spacer. Next, the organic spacer is removed through access apertures (34) to cause metal layer (24) to form a shell over a vacuum chamber (20) between the microelectronics device (14) and metal layer (24). The next step is to seal vacuum chamber (20) by coating metal layer (24) and closing off access apertures (34). The method of the present invention has application to produce vacuum micro-diodes and micro-triodes, micro-mass spectrometers, micro-light bulbs, and micro-thermocouple gages, as well as numerous other applications.
Inventors
- 👤 R. Mark Boysel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 15:12
CPC Classifications
H; H01; H01J; H01J9/00; H01J9/02; H01J9/022; H01J9/025
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
94 words
A method of forming a vacuum micro-chamber for encapsulating a microelectronic device on a substrate, said method comprising the steps of: a) forming a spacer material overlying said microelectronic device and a portion of said substrate adjacent to said microelectronic device; b) forming a covering layer overlying and encompassing said spacer material except for at least one access aperture; c) removing said spacer material through said at least one access aperture to form a chamber defined between said substrate and said covering layer; and d) sealing said chamber by closing off said access aperture.
Claim 2
Independent Claim
94 words
A method of forming a vacuum micro-chamber for encapsulating a microelectronic device on a substrate, said method comprising the steps of: a) forming a spacer material overlying said microelectronic device and a portion of said substrate adjacent to said microelectronic device; b) forming a covering layer overlying and encompassing said spacer material except for at least one access aperture; c) removing said spacer material through said at least one access aperture to form a chamber defined between said substrate and said covering layer; and d) sealing said chamber by closing off said access aperture.
Claim 3
Dependent Claim
30 words
The method of claim 1 and further comprising the step of fixedly establishing a vacuum in said chamber by placing said chamber in an evacuated environment during said sealing step.
Claim 4
Dependent Claim
13 words
The method of claim 1 wherein said covering layer is a metal layer.
Claim 5
Dependent Claim
20 words
The method of claim 1 wherein said sealing step is accomplished by forming a metal seal over said access aperture.
Claim 6
Dependent Claim
15 words
The method of claim 1 wherein said metal layer is a low temperature metal layer.
Claim 7
Dependent Claim
11 words
The method of claim 1 wherein said metal layer is aluminum.
Claim 8
Dependent Claim
22 words
The method of claim 1 wherein said metal layer functions as the upper electrode of said microelectronic device to form a triode.
Claim 9
Dependent Claim
22 words
The method of claim 1 wherein said metal layer functions as the upper electrode of said microelectronic device to form a diode.
Claim 10
Dependent Claim
15 words
The method of claim 1 wherein said covering layer has a plurality of access apertures.
Claim 11
Dependent Claim
13 words
The method of claim 1 wherein said spacer material is an organic spacer.
Claim 12
Dependent Claim
11 words
The method of claim 1 wherein said spacer material is photoresist.
Claim 13
Dependent Claim
14 words
The method of claim 1 wherein said removing step is by isotropic plasma etching.
Claim 14
Dependent Claim
40 words
The method of claim 1 wherein said covering layer comprises lowered portions which are in contact with said substrate and a raised portion which is not in contact with said substrate, thereby forming said access aperture through said raised portion.
Claim 15
Dependent Claim
10 words
The method of claim 1 wherein said substrate is silicon.
Claim 16
Dependent Claim
11 words
The method of claim 1 wherein said substrate is gallium arsenide.
Claim 17
Independent Claim
137 words
A method of forming a vacuum micro-chamber for encapsulating a microelectronic device on a substrate, said method comprising the steps of: a) forming a spacer layer overlying said microelectronic device and said substrate; b) patterning said spacer layer to form a spacer material overlying said microelectronic device and a portion of said substrate adjacent to said microelectronic device; c) forming a metal layer overlying and encompassing said spacer material; d) patterning said metal layer to form at least one access aperture therein; e) removing said spacer material through said at least one access aperture by a isotropic plasma etch process to form a chamber defined between said substrate and said aluminum layer; and f) fixedly establishing a vacuum in said chamber by sealing said chamber in an evacuated environment with a metal seal over said access aperture.
Claim 18
Independent Claim
137 words
A method of forming a vacuum micro-chamber for encapsulating a microelectronic device on a substrate, said method comprising the steps of: a) forming a spacer layer overlying said microelectronic device and said substrate; b) patterning said spacer layer to form a spacer material overlying said microelectronic device and a portion of said substrate adjacent to said microelectronic device; c) forming a metal layer overlying and encompassing said spacer material; d) patterning said metal layer to form at least one access aperture therein; e) removing said spacer material through said at least one access aperture by a isotropic plasma etch process to form a chamber defined between said substrate and said aluminum layer; and f) fixedly establishing a vacuum in said chamber by sealing said chamber in an evacuated environment with a metal seal over said access aperture.
Claim 19
Dependent Claim
15 words
The method of claim 16 wherein said dry etch process is an isotropic plasma etch.
Claim 20
Dependent Claim
11 words
The method of claim 16 wherein said metal layer is aluminum.
Claim 21
Dependent Claim
41 words
The method of claim 16 wherein said patterned metal layer comprises lowered portions which are in contact with said substrate and a raised portion which is not in contact with said substrate, thereby forming said access aperture through said raised portion.
Claim 22
Independent Claim
138 words
A method of forming a vacuum micro-chamber for encapsulating a microelectronic device on a substrate, said method comprising the steps of: a) forming a spacer layer of photoresist overlying said microelectronic device and said substrate; b) patterning said spacer layer to form a spacer material overlying said microelectronic device and a portion of said substrate adjacent to said microelectronic device; c) forming a metal layer overlying and encompassing said spacer material; d) patterning said metal layer to form at least one access aperture therein; e) removing said spacer material through said at least one access aperture by a dry etch process to form a chamber defined between said substrate and said metal layer; and f) fixedly establishing a vacuum in said chamber by sealing said chamber in an evacuated environment with a metal seal over said access aperture.
Claim 23
Independent Claim
138 words
A method of forming a vacuum micro-chamber for encapsulating a microelectronic device on a substrate, said method comprising the steps of: a) forming a spacer layer of photoresist overlying said microelectronic device and said substrate; b) patterning said spacer layer to form a spacer material overlying said microelectronic device and a portion of said substrate adjacent to said microelectronic device; c) forming a metal layer overlying and encompassing said spacer material; d) patterning said metal layer to form at least one access aperture therein; e) removing said spacer material through said at least one access aperture by a dry etch process to form a chamber defined between said substrate and said metal layer; and f) fixedly establishing a vacuum in said chamber by sealing said chamber in an evacuated environment with a metal seal over said access aperture.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-10-10 | 1998-04-11 | 1998-10-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-10 | 2002-04-11 | 2002-10-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-10 | 2006-04-11 | 2006-10-11 | $7700.00 | Window Closed / Lapsed |