US5350931A
Expired / Lapsed
US
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Double barrier resonant propagation filter
Assignee: United States Department of the Army
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Filing: 1993-05-19
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Granted: 1994-09-27
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Expires: 2013-05-19
Abstract
Abstract One or more double barrier resonant tunneling filters are provided for electron propagation mode control in nanostructure quantum wire electron waveguides and in quantum interference devices in the waveguide.
Inventors
- 👤 James F. Harvey
- 👤 Robert A. Lux
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 14:59
CPC Classifications
B; B82; B82Y; B82Y10/00; H; H10; H10D; H10D30/00; H10D62/00; H10D62/80; H10D62/81; H10D62/812; H10D62/813; H10D8/00; H10D8/70; H10D8/755
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
153 words
A resonant propagation filter for applications in quantum wire waveguide comprising: first and second regions of a first semiconductor material having a first conduction band edge energy; and a third region of a second semiconductor material with a second conduction band edge energy which is lower than that of said first and second regions, the third region being disposed between said first and second regions; a first quantum wire waveguide having a conduction band edge energy similar to the third region; wherein the first, second and third regions form a resonant tunneling structure and wherein said resonant tunneling structure is disposed within said electron waveguide such that the lateral dimensions of the resonant tunneling structure are constrained thereby permitting only a predetermined range of electron momenta in a direction of electron propagation and only discrete values of momentum in the lateral directions; said filter permitting predetermined propagating modes to pass through said waveguide.
Claim 2
Dependent Claim
153 words
A resonant propagation filter for applications in quantum wire waveguide comprising: first and second regions of a first semiconductor material having a first conduction band edge energy; and a third region of a second semiconductor material with a second conduction band edge energy which is lower than that of said first and second regions, the third region being disposed between said first and second regions; a first quantum wire waveguide having a conduction band edge energy similar to the third region; wherein the first, second and third regions form a resonant tunneling structure and wherein said resonant tunneling structure is disposed within said electron waveguide such that the lateral dimensions of the resonant tunneling structure are constrained thereby permitting only a predetermined range of electron momenta in a direction of electron propagation and only discrete values of momentum in the lateral directions; said filter permitting predetermined propagating modes to pass through said waveguide.
Claim 3
Dependent Claim
44 words
The filter of claim 1 wherein said first and second regions define first and second barrier regions of a quantum well due to the difference in the conduction band edge energies of said regions to the conduction band edge energies of the third region.
Claim 4
Dependent Claim
26 words
The filter of claim 1 wherein a resonant energy level, V n , of said filter is adjusted by adjusting the thickness of said third region.
Claim 5
Dependent Claim
35 words
The filter of claim 1 wherein said waveguide is GaAs, said first and second regions are Al x Ga 1-x As and said third region is selected from the group consisting of GaAs or InGaAs.
Claim 6
Dependent Claim
58 words
The filter of claim 1 which further includes at least a second quantum wire waveguide which intersects and couples to an intermediate portion of said first quantum wire; and at least a second barrier resonant tunneling filter disposed in series within the length of said second waveguide and having a structure similar to that of the first-mentioned filter.
Claim 7
Dependent Claim
54 words
The filter of claim 4 which further includes a second quantum wire waveguide which intersects and couples to an intermediate portion of said first quantum wire; and a second barrier resonant tunneling filter disposed in series within the length of said second waveguide and having a structure similar to that of the first-mentioned filter.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-09-26 | 1998-03-28 | 1998-09-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-26 | 2002-03-28 | 2002-09-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-09-26 | 2006-03-28 | 2006-09-27 | $7700.00 | Window Closed / Lapsed |