Abstract An energy filter for carriers in semiconductor devices and devices with such filters are disclosed. The filter is a superlattice and the filtering action arises from the subbands and gaps in the conduction and valence bands of the superlattice. A heterojunction bipolar transistor with the filter between the emitter and base has carriers injected from the emitter into the base with energies confined to levels that minimize transit time across the base; a MESFET with a filter between a heterojunction source to channel has carriers injected with energies confined to minimize transit time across the channel. A diode with a filter in front of a drift region limits the spread of energies of injected carriers.
A transistor, comprising: (a) a first region of semiconductor material; (b) a second region of semiconductor material; (c) a superlattice between and butting said first and second regions, so that carriers injected from said first region into said second region penetrate the layers of said superlattice with energies consistent with the minibands of said superlattice; and (d) a third region of semiconductor material located to collect carriers passing through said second region.
Claim 2
Dependent Claim
72 words
A transistor, comprising: (a) a first region of semiconductor material; (b) a second region of semiconductor material; (c) a superlattice between and butting said first and second regions, so that carriers injected from said first region into said second region penetrate the layers of said superlattice with energies consistent with the minibands of said superlattice; and (d) a third region of semiconductor material located to collect carriers passing through said second region.
Claim 3
Dependent Claim
28 words
The transistor of claim 1, wherein: (a) said first region is an emitter; (b) said second region is a base; and (c) said third region is a collector.
Claim 4
Dependent Claim
50 words
The transistor of claim 2, wherein: (a) said emitter is made of Al x Ga 1-x As; (b) said base is made of Al y Ga 1-y As; (c) said collector i s made of Al z Ga 1-z As; and (d) said superlattice has components of GaAs and AlaAs.
Claim 5
Dependent Claim
35 words
The transistor of claim 1, further comprising: (a) a gate; and wherein: (b) said first region is a source; (c) said second region is a channel region; and (d) said third region is a drain.