Ballistic heterojunction bipolar transistor

Abstract

Abstract 1. Heterojunction bipolar semiconductor component operating at high speed comprising : a base (B) in a first semiconductor having a forbidden band and a doping of a first type, an emitter (E) in a second semiconductor having a wider forbidden band than that of the base and a doping of a second type opposed to the first, the emitter doping being weaker than the base doping, a collector (C) in a third semiconductor having a doping of the same type as the emitter, an emitter - base heterojunction having a peak or spike form conduction band with a progressive slope on the emitter side and an abrupt slope on the base side, said spike making it possible, when a forward biasing voltage is applied between the emitter and the base, to introduce the charge carriers of the emitter into the base with a high kinetic energy, said component being characterized in that it comprises at the emitter - base heterojunction, an interface (14, 18, 22, 28), whose composition and doping have the effect of giving the spike a width greater than (16 nm 160 A) to prevent the carriers traversing it by the tunnel effect and a height greater than approximately 10 times the normal thermal energy of the carriers in said semiconductor and below the diffusion energy of said carriers.

Inventors

• 👤 David G. Ankri
• 👤 Lester F. Eastman
• 👤 Walter H. Ku

Bibliographic Details