US5349598A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optical semiconductor apparatus, a method of driving the same and an optical transmission system using the same
Assignee: Canon Inc
•
Filing: 1993-01-29
•
Granted: 1994-09-20
•
Expires: 2013-01-29
Abstract
Abstract An optical semiconductor apparatus includes at least two upper and lower light waveguides. The waveguides are formed in a direction of semiconductor layers layered on a substrate and have a predetermined coupling degree therebetween. At least one semiconductor laser and at least one photodetector are respectively arranged in any one of the light waveguides. A grating may be formed in or in the vicinity of any one of the light waveguides to attain a wavelength-sensitivity in the coupling between the upper and lower light waveguides. The coupling degree may be controlled by a voltage applied to a part of the waveguides. An incident light entering one of the waveguides can be coupled to a local oscillation light emitted from the semiconductor laser to generate a beat signal therebetween. The beat signal can be detected by the photodetector.
Inventors
- 👤 Toshihiko Ouchi
- 👤 Hajime Sakata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:08
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/1028; H01S5/1032; H01S5/02; H01S5/026; H01S5/0262; H01S5/0264; G; G02; G02F; G02F2/00; G02F2/002; H01S5/06; H01S5/062; H01S5/0625; H01S5/06255; H01S5/06256; H01S5/1035; H01S5/12; H01S5/1206; H01S5/1215; H01S5/50; H01S5/5045
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
97 words
An optical semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on said substrate, at least an upper waveguide and a lower waveguide fabricated in said semiconductor layers, said upper and lower waveguides being separated from each other in a direction of said semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on said substrate so that light emitted therefrom enters one of said upper and lower waveguides; a photodetector positioned on said substrate so as to receive light from one of said upper and lower waveguides.
Claim 2
Dependent Claim
97 words
An optical semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on said substrate, at least an upper waveguide and a lower waveguide fabricated in said semiconductor layers, said upper and lower waveguides being separated from each other in a direction of said semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on said substrate so that light emitted therefrom enters one of said upper and lower waveguides; a photodetector positioned on said substrate so as to receive light from one of said upper and lower waveguides.
Claim 3
Dependent Claim
40 words
An optical semiconductor apparatus according to claim 1, further comprising a grating formed in or in the vicinity of one of said upper and lower waveguides so that the coupling between said upper and lower waveguides has a wavelength-selectivity property.
Claim 4
Dependent Claim
25 words
An optical semiconductor apparatus according to claim 2, further comprising means for controlling the wavelength-selectivity so that a selection wavelength of the coupling is changeable.
Claim 5
Dependent Claim
17 words
An optical semiconductor apparatus according to claim 1, further comprising means for controlling the degree of coupling.
Claim 6
Dependent Claim
17 words
An optical semiconductor apparatus according to claim 1, wherein said semiconductor laser comprises a single-mode tunable laser.
Claim 7
Dependent Claim
18 words
An optical semiconductor apparatus according to claim 5, wherein said semiconductor laser comprises a distributed feedback type laser.
Claim 8
Dependent Claim
19 words
An optical semiconductor apparatus according to claim 5, wherein said semiconductor laser comprises a distributed Bragg reflection type laser.
Claim 9
Dependent Claim
26 words
An optical semiconductor apparatus according to claim 1, further comprising another semiconductor laser, wherein said semiconductor laser and said another semiconductor laser are arranged in parallel.
Claim 10
Dependent Claim
27 words
An optical semiconductor apparatus according to claim 1, further comprising a mesa portion of said optical semiconductor apparatus for lateral confinement of said upper and lower waveguides.
Claim 11
Dependent Claim
39 words
An optical semiconductor apparatus according to claim 9, wherein said mesa portion is formed by etching both lateral sides of said upper and lower waveguides down to said substrate and burying the etched both sides with a high-resistance material.
Claim 12
Dependent Claim
42 words
An optical semiconductor apparatus according to claim 9, wherein said mesa portion is formed by etching both lateral sides of said upper waveguide down to a level slightly above said lower waveguide and burying the etched both sides with a high-resistance material.
Claim 13
Dependent Claim
17 words
An optical semiconductor apparatus according to claim 1, wherein said semiconductor laser includes a plurality of electrodes.
Claim 14
Dependent Claim
16 words
An optical semiconductor apparatus according to claim 1, wherein said photodetector includes a plurality of electrodes.
Claim 15
Independent Claim
180 words
A method of driving an optical semiconductor apparatus, said method comprising the steps of: (a) providing an optical semiconductor apparatus, the semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on the substrate, at least an upper waveguide and a lower waveguide fabricated in the semiconductor layers, the upper and lower waveguides being separated from each other in a direction of the semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on said substrate so that light emitted therefrom enters one of the upper and lower waveguides; and a photodetector positioned on said substrate so as to receive light from one of the upper and lower waveguides; (b) causing light incident on the optical semiconductor apparatus to enter one of the upper and lower waveguides; (c) causing the semiconductor laser to generate a local oscillation light beam; (d) coupling the incident light to the local oscillation light beam to a predetermined coupling degree; and (e) performing a heterodyne detection with the photodetector to detect information carried by the incident light.
Claim 16
Independent Claim
180 words
A method of driving an optical semiconductor apparatus, said method comprising the steps of: (a) providing an optical semiconductor apparatus, the semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on the substrate, at least an upper waveguide and a lower waveguide fabricated in the semiconductor layers, the upper and lower waveguides being separated from each other in a direction of the semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on said substrate so that light emitted therefrom enters one of the upper and lower waveguides; and a photodetector positioned on said substrate so as to receive light from one of the upper and lower waveguides; (b) causing light incident on the optical semiconductor apparatus to enter one of the upper and lower waveguides; (c) causing the semiconductor laser to generate a local oscillation light beam; (d) coupling the incident light to the local oscillation light beam to a predetermined coupling degree; and (e) performing a heterodyne detection with the photodetector to detect information carried by the incident light.
Claim 17
Independent Claim
202 words
A method of driving an optical semiconductor apparatus, said method comprising the steps of: (a) providing an optical semiconductor apparatus, the semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on the substrate, at least an upper waveguide and a lower waveguide fabricated in the semiconductor layers, the upper and lower waveguides being separated from each other in a direction of the semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on the substrate so that light emitted therefrom enters one of the upper and lower waveguides; and a photodetector positioned on the substrate so as to receive light from one of the upper and lower waveguides; (b) causing light incident on the optical semiconductor apparatus to enter one of the upper and lower waveguides; (c) causing the semiconductor laser to generate a local oscillation light beam; (d) coupling the incident light to the local oscillation light beam to a predetermined coupling degree; and (e) performing a heterodyne detection with the photodetector while stabilizing one of the oscillation wavelength and the phase of the semiconductor laser by using a signal detected by the photodetector to detect information carried by the incident light.
Claim 18
Independent Claim
202 words
A method of driving an optical semiconductor apparatus, said method comprising the steps of: (a) providing an optical semiconductor apparatus, the semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on the substrate, at least an upper waveguide and a lower waveguide fabricated in the semiconductor layers, the upper and lower waveguides being separated from each other in a direction of the semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on the substrate so that light emitted therefrom enters one of the upper and lower waveguides; and a photodetector positioned on the substrate so as to receive light from one of the upper and lower waveguides; (b) causing light incident on the optical semiconductor apparatus to enter one of the upper and lower waveguides; (c) causing the semiconductor laser to generate a local oscillation light beam; (d) coupling the incident light to the local oscillation light beam to a predetermined coupling degree; and (e) performing a heterodyne detection with the photodetector while stabilizing one of the oscillation wavelength and the phase of the semiconductor laser by using a signal detected by the photodetector to detect information carried by the incident light.
Claim 19
Independent Claim
150 words
A method of driving an optical semiconductor apparatus, said method comprising the steps of: (a) providing an optical semiconductor apparatus, the semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on the substrate; at least an upper waveguide and a lower waveguide fabricated in the semiconductor layers, the upper and lower waveguides being separated from each other in a direction of the semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on the substrate so that light emitted therefrom enters one of the upper and lower waveguides; a photodetector positioned on said substrate so as to receive light from one of the upper and lower waveguides; and (b) applying a voltage to a portion of the upper and lower waveguides to change a refractive index thereof so that the degree of coupling between the upper and lower waveguides is controlled.
Claim 20
Independent Claim
150 words
A method of driving an optical semiconductor apparatus, said method comprising the steps of: (a) providing an optical semiconductor apparatus, the semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on the substrate; at least an upper waveguide and a lower waveguide fabricated in the semiconductor layers, the upper and lower waveguides being separated from each other in a direction of the semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on the substrate so that light emitted therefrom enters one of the upper and lower waveguides; a photodetector positioned on said substrate so as to receive light from one of the upper and lower waveguides; and (b) applying a voltage to a portion of the upper and lower waveguides to change a refractive index thereof so that the degree of coupling between the upper and lower waveguides is controlled.
Claim 21
Independent Claim
263 words
A method of driving an optical semiconductor apparatus, said method comprising the steps of: (a) providing an optical semiconductor apparatus, the semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on the substrate; at least an upper waveguide and a lower waveguide fabricated in the semiconductor layers, the upper and lower waveguides being separated from each other in a direction of the semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on said substrate so that light emitted therefrom enters one of the upper and lower waveguides; a photodetector positioned on said substrate so as to receive light from one of the upper and lower waveguides; a grating formed in or in the vicinity of one of the upper and lower waveguides so that the coupling between the upper and lower waveguides has the property of wavelength-selectivity; and control means for controlling the wavelength-selectivity so that a selection wavelength of the coupling is changeable; (b) causing light incident on the optical semiconductor apparatus to enter one of the upper and lower waveguides; (c) causing the semiconductor laser to generate a local oscillation light beam; (d) adjusting the selection-wavelength to be the wavelength of the incident light with the control means only when the apparatus performs a signal receiving operation; (e) performing a heterodyne detection with the photodetector to detect information carried by the incident light; and (f) changing the selection-wavelength to deviate from the wavelength of the incident light with the control means when the apparatus does not perform the signal receiving operation.
Claim 22
Independent Claim
263 words
A method of driving an optical semiconductor apparatus, said method comprising the steps of: (a) providing an optical semiconductor apparatus, the semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on the substrate; at least an upper waveguide and a lower waveguide fabricated in the semiconductor layers, the upper and lower waveguides being separated from each other in a direction of the semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on said substrate so that light emitted therefrom enters one of the upper and lower waveguides; a photodetector positioned on said substrate so as to receive light from one of the upper and lower waveguides; a grating formed in or in the vicinity of one of the upper and lower waveguides so that the coupling between the upper and lower waveguides has the property of wavelength-selectivity; and control means for controlling the wavelength-selectivity so that a selection wavelength of the coupling is changeable; (b) causing light incident on the optical semiconductor apparatus to enter one of the upper and lower waveguides; (c) causing the semiconductor laser to generate a local oscillation light beam; (d) adjusting the selection-wavelength to be the wavelength of the incident light with the control means only when the apparatus performs a signal receiving operation; (e) performing a heterodyne detection with the photodetector to detect information carried by the incident light; and (f) changing the selection-wavelength to deviate from the wavelength of the incident light with the control means when the apparatus does not perform the signal receiving operation.
Claim 23
Independent Claim
167 words
A method of driving an optical semiconductor apparatus, said method comprising the steps of: (a) providing an optical semiconductor apparatus, said semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on the substrate; at least an upper waveguide and a lower waveguide fabricated in the semiconductor layers, the upper and lower waveguides being separated from each other in a direction of the semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on said substrate so that light emitted therefrom enters one of the upper and lower waveguides; a photodetector positioned on said substrate so as to receive light from one of the upper and lower waveguides; and control means for controlling the degree of coupling; (b) adjusting the degree of coupling to be approximately 100% with said control means when the apparatus does not perform signal receiving; and (c) causing the semiconductor laser to transmit an oscillating laser beam when the apparatus does not perform signal receiving.
Claim 24
Independent Claim
167 words
A method of driving an optical semiconductor apparatus, said method comprising the steps of: (a) providing an optical semiconductor apparatus, said semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on the substrate; at least an upper waveguide and a lower waveguide fabricated in the semiconductor layers, the upper and lower waveguides being separated from each other in a direction of the semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on said substrate so that light emitted therefrom enters one of the upper and lower waveguides; a photodetector positioned on said substrate so as to receive light from one of the upper and lower waveguides; and control means for controlling the degree of coupling; (b) adjusting the degree of coupling to be approximately 100% with said control means when the apparatus does not perform signal receiving; and (c) causing the semiconductor laser to transmit an oscillating laser beam when the apparatus does not perform signal receiving.
Claim 25
Independent Claim
211 words
A method of driving an optical semiconductor apparatus, said method comprising the steps of: (a) providing an optical semiconductor apparatus, the semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on the substrate; at least an upper waveguide and a lower waveguide fabricated in the semiconductor layers, the upper and lower waveguides being separated from each other in a direction of the semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on said substrate so that light emitted therefrom enters one of the upper and lower waveguides; a photodetector positioned on said substrate so as to receive light from one of the upper and lower waveguides; control means for controlling the degree of coupling; (b) causing light incident on the optical semiconductor apparatus to enter one of the upper and lower waveguides; (c) adjusting the degree of coupling to assume a large value with said control means; (d) performing a heterodyne detection with said photodetector to detect information carried by the incident light; (e) modulating the output of the semiconductor laser based on the detected information to generate a signal; and (f) causing the signal generated in said modulating step to be transmitted to the exterior of the optical semiconductor apparatus.
Claim 26
Independent Claim
211 words
A method of driving an optical semiconductor apparatus, said method comprising the steps of: (a) providing an optical semiconductor apparatus, the semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on the substrate; at least an upper waveguide and a lower waveguide fabricated in the semiconductor layers, the upper and lower waveguides being separated from each other in a direction of the semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on said substrate so that light emitted therefrom enters one of the upper and lower waveguides; a photodetector positioned on said substrate so as to receive light from one of the upper and lower waveguides; control means for controlling the degree of coupling; (b) causing light incident on the optical semiconductor apparatus to enter one of the upper and lower waveguides; (c) adjusting the degree of coupling to assume a large value with said control means; (d) performing a heterodyne detection with said photodetector to detect information carried by the incident light; (e) modulating the output of the semiconductor laser based on the detected information to generate a signal; and (f) causing the signal generated in said modulating step to be transmitted to the exterior of the optical semiconductor apparatus.
Claim 27
Dependent Claim
233 words
An optical transmission system comprising: (a) a transmission line; (b) a plurality of nodes interconnected by said transmission line, at least one of said nodes containing an optical semiconductor apparatus, said semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on said substrate; at least an upper waveguide and a lower waveguide fabricated in said semiconductor layers, said upper and lower waveguides being separated from each other in a direction of said semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on said substrate so that light emitted therefrom enters one of said upper and lower waveguides; a photodetector positioned on said substrate so as to receive light from one of said upper and lower waveguides; a grating formed in or in the vicinity of one of said upper and lower waveguides so that the coupling between said upper and lower waveguides has the property of wavelength-selectivity; and control means for controlling the wavelength-selectivity so that a selection wavelength of the coupling is changeable, wherein said control means adjusts the selection-wavelength to be the wavelength of light incident on said optical semiconductor apparatus only when said optical semiconductor apparatus performs a signal receiving operation, and wherein said control means adjusts the selection-wavelength to deviate from the wavelength of the incident light when said optical semiconductor apparatus does not perform the signal receiving operation.
Claim 28
Dependent Claim
233 words
An optical transmission system comprising: (a) a transmission line; (b) a plurality of nodes interconnected by said transmission line, at least one of said nodes containing an optical semiconductor apparatus, said semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on said substrate; at least an upper waveguide and a lower waveguide fabricated in said semiconductor layers, said upper and lower waveguides being separated from each other in a direction of said semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on said substrate so that light emitted therefrom enters one of said upper and lower waveguides; a photodetector positioned on said substrate so as to receive light from one of said upper and lower waveguides; a grating formed in or in the vicinity of one of said upper and lower waveguides so that the coupling between said upper and lower waveguides has the property of wavelength-selectivity; and control means for controlling the wavelength-selectivity so that a selection wavelength of the coupling is changeable, wherein said control means adjusts the selection-wavelength to be the wavelength of light incident on said optical semiconductor apparatus only when said optical semiconductor apparatus performs a signal receiving operation, and wherein said control means adjusts the selection-wavelength to deviate from the wavelength of the incident light when said optical semiconductor apparatus does not perform the signal receiving operation.
Claim 29
Dependent Claim
184 words
An optical transmission system comprising: (a) a transmission line; (b) a plurality of nodes interconnected by said transmission line, at least one of said nodes containing an optical semiconductor apparatus, said semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on said substrate; at least an upper waveguide and a lower waveguide fabricated in said semiconductor layers, said upper and lower waveguides being separated from each other in a direction of said semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on said substrate so that light emitted therefrom enters one of said upper and lower waveguides; a photodetector positioned on said substrate so as to receive light from one of said upper and lower waveguides; and control means for controlling the degree of coupling, wherein the degree of coupling is adjusted to approximately 100% by said control means when said optical semiconductor apparatus does not perform a signal receiving operation and wherein said semiconductor laser oscillates and transmits a laser beam when said optical semiconductor apparatus does not perform the signal receiving operation.
Claim 30
Dependent Claim
184 words
An optical transmission system comprising: (a) a transmission line; (b) a plurality of nodes interconnected by said transmission line, at least one of said nodes containing an optical semiconductor apparatus, said semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on said substrate; at least an upper waveguide and a lower waveguide fabricated in said semiconductor layers, said upper and lower waveguides being separated from each other in a direction of said semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on said substrate so that light emitted therefrom enters one of said upper and lower waveguides; a photodetector positioned on said substrate so as to receive light from one of said upper and lower waveguides; and control means for controlling the degree of coupling, wherein the degree of coupling is adjusted to approximately 100% by said control means when said optical semiconductor apparatus does not perform a signal receiving operation and wherein said semiconductor laser oscillates and transmits a laser beam when said optical semiconductor apparatus does not perform the signal receiving operation.
Claim 31
Dependent Claim
203 words
An optical transmission system comprising: (a) a transmission line; (b) a plurality of nodes interconnected by said transmission line, at least one of said nodes containing an optical semiconductor apparatus, said semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on said substrate; at least an upper waveguide and a lower waveguide fabricated in said semiconductor layers, said upper and lower waveguides being separated from each other in a direction of said semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on said substrate so that light emitted therefrom enters one of said upper and lower waveguides; a photodetector positioned on said substrate so as to receive light from one of said upper and lower waveguides; and control means for controlling the degree of coupling, wherein the degree of coupling is adjusted to a large value by said control means, wherein a heterodyne detection is performed by said photodetector to detect information carried by light incident on said optical semiconductor device and wherein light emitted from said semiconductor laser is modulated based on the detected information to generate a signal which is to be transmitted to the exterior of said optical semiconductor apparatus.
Claim 32
Dependent Claim
203 words
An optical transmission system comprising: (a) a transmission line; (b) a plurality of nodes interconnected by said transmission line, at least one of said nodes containing an optical semiconductor apparatus, said semiconductor apparatus comprising: a substrate; a plurality of semiconductor layers formed on said substrate; at least an upper waveguide and a lower waveguide fabricated in said semiconductor layers, said upper and lower waveguides being separated from each other in a direction of said semiconductor layers and being coupled to each other to a predetermined coupling degree; a semiconductor laser positioned on said substrate so that light emitted therefrom enters one of said upper and lower waveguides; a photodetector positioned on said substrate so as to receive light from one of said upper and lower waveguides; and control means for controlling the degree of coupling, wherein the degree of coupling is adjusted to a large value by said control means, wherein a heterodyne detection is performed by said photodetector to detect information carried by light incident on said optical semiconductor device and wherein light emitted from said semiconductor laser is modulated based on the detected information to generate a signal which is to be transmitted to the exterior of said optical semiconductor apparatus.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-09-19 | 1998-03-21 | 1998-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-19 | 2002-03-21 | 2002-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-09-19 | 2006-03-21 | 2006-09-20 | $7700.00 | Window Closed / Lapsed |