US5347157A
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Multilayer structure having a (111)-oriented buffer layer
Assignee: Eastman Kodak Co
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Filing: 1992-12-17
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Granted: 1994-09-13
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Expires: 2012-12-17
Abstract
Abstract A multilayer structure comprising in order: a (111)-oriented single crystal substrate and an epitaxial metal oxide buffer layer. The substrate is doped or undoped. The substrate is a semiconductor selected from the group consisting of Si compounds, Ge compounds, and compounds having at least one element selected from the group consisting of Al, Ga, and In and at least one element selected from the group consisting of N, P, As, and Sb. The substrate defines a substrate superlattice dimension equal to 3 times a sublattice constant of the substrate. The epitaxial metal oxide buffer layer has a three-fold rotation symmetry about the substrate (111) direction. The buffer layer defines a buffer layer superlattice dimension equal to 4 times the oxygen-to-oxygen lattice spacing of the buffer layer. The buffer layer superlattice dimension is within 15 percent of the substrate superlattice dimension.
Inventors
- 👤 Liang-Sun Hung
- 👤 John A. Agostinelli
- 👤 Jose M. Mir
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 04:34
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/35; G02F1/37; C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/60; C30B29/68; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/13; G02B6/131
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
141 words
A multilayer structure comprising in order: a (111)-oriented single crystal substrate, said substrate being doped or undoped, said substrate being a semiconductor selected from the group consisting of Si x Ge 1-x semiconductors, wherein x is from 0 to 1, and semiconductors having at least one element selected from the group consisting of Al, Ca, and In and at least one element selected from the group consisting of N, P, As, and Sb, said substrate defining a substrate superlattice dimension equal to 3 times a sublattice constant of said substrate; and an epitaxial metal oxide buffer layer having a three-fold rotation symmetry about the substrate <111>direction, said buffer layer defining a buffer layer superlattice dimension equal to 4 times the oxygen-to-oxygen lattice spacing of said buffer layer, said buffer layer superlattice dimension being within 15 percent of said substrate superlattice dimension.
Claim 2
Dependent Claim
141 words
A multilayer structure comprising in order: a (111)-oriented single crystal substrate, said substrate being doped or undoped, said substrate being a semiconductor selected from the group consisting of Si x Ge 1-x semiconductors, wherein x is from 0 to 1, and semiconductors having at least one element selected from the group consisting of Al, Ca, and In and at least one element selected from the group consisting of N, P, As, and Sb, said substrate defining a substrate superlattice dimension equal to 3 times a sublattice constant of said substrate; and an epitaxial metal oxide buffer layer having a three-fold rotation symmetry about the substrate <111>direction, said buffer layer defining a buffer layer superlattice dimension equal to 4 times the oxygen-to-oxygen lattice spacing of said buffer layer, said buffer layer superlattice dimension being within 15 percent of said substrate superlattice dimension.
Claim 3
Dependent Claim
18 words
The multilayer structure of claim 1 further comprising an epitaxial metal oxide film deposited on said buffer layer.
Claim 4
Dependent Claim
32 words
The multilayer structure of claim 1 wherein said buffer layer is selected from the group consisting of (111)MgO, (0001)Al 2 O 3 , (0001)Ga 2 O 3 , and (111)SrTiO 3 .
Claim 5
Dependent Claim
31 words
The multilayer structure of claim 3 further comprising an epitaxial film of (0001)LiNb x Ta 1-x O 3 , wherein x is from 0 to 1, deposited on said buffer layer.
Claim 6
Dependent Claim
38 words
The multilayer structure of claim 4 wherein said substrate is selected from the group consisting of GaP, InP, InAs, GaSb, Al x Ga 1-x As, and Si x Ge 1-x , wherein x is from 0 to 1.
Claim 7
Dependent Claim
12 words
The multilayer structure of claim 1 wherein said buffer layer is (111)MgO.
Claim 8
Dependent Claim
17 words
The multilayer structure of claim 6 further comprising a nonlinear optical film deposited on said buffer layer.
Claim 9
Dependent Claim
31 words
The multilayer structure of claim 6 further comprising an epitaxial film of (0001)LiNb x Ta 1-x O 3 , wherein x is from 0 to 1, deposited on said buffer layer.
Claim 10
Dependent Claim
22 words
The multilayer structure of claim 6 wherein said substrate is Al x Ga 1-x As, wherein x is from 0 to 1.
Claim 11
Dependent Claim
128 words
A multilayer structure comprising in order: a (111)-oriented single crystal semiconductor substrate, said substrate being doped or undoped and being selected from the group consisting of GaP, InP, InAs, GaSb, Al x Ga 1-x As, and Si x Ge 1-x , wherein x is from 0 to 1; and an epitaxial metal oxide buffer layer selected from the group consisting of (111)MgO, (0001)Al 2 O 3 , (0001)Ga 2 O 3 , and (111)SrTiO 3 , said substrate defining a substrate superlattice dimension equal to 3 times a sublattice constant of said substrate, said buffer layer defining a buffer layer superlattice dimension equal to 4 times the oxygen-to-oxygen lattice spacing of said buffer layer, said buffer layer superlattice dimension being within 10 percent of said substrate superlattice dimension.
Claim 12
Dependent Claim
128 words
A multilayer structure comprising in order: a (111)-oriented single crystal semiconductor substrate, said substrate being doped or undoped and being selected from the group consisting of GaP, InP, InAs, GaSb, Al x Ga 1-x As, and Si x Ge 1-x , wherein x is from 0 to 1; and an epitaxial metal oxide buffer layer selected from the group consisting of (111)MgO, (0001)Al 2 O 3 , (0001)Ga 2 O 3 , and (111)SrTiO 3 , said substrate defining a substrate superlattice dimension equal to 3 times a sublattice constant of said substrate, said buffer layer defining a buffer layer superlattice dimension equal to 4 times the oxygen-to-oxygen lattice spacing of said buffer layer, said buffer layer superlattice dimension being within 10 percent of said substrate superlattice dimension.
Claim 13
Dependent Claim
22 words
The multilayer structure of claim 10 wherein said substrate is Al x Ga 1-x As, wherein x is from 0 to 1.
Claim 14
Dependent Claim
31 words
The multilayer structure of claim 10 further comprising an epitaxial film of (0001)LiNb x Ta 1-x O 3 , wherein x is from 0 to 1, deposited on said buffer layer.
Claim 15
Dependent Claim
11 words
The multilayer structure of claim 12 wherein said substrate is GaAs.
Claim 16
Dependent Claim
54 words
A multilayer structure comprising in order: a (111)-oriented single crystal semiconductor substrate, said substrate being doped or undoped and being selected from the group consisting of GaP, InP, InAs, GaSb, Al x Ga 1-x As, and Si x Ge 1-x , wherein x is from 0 to 1; and an epitaxial (111)MgO buffer layer.
Claim 17
Dependent Claim
54 words
A multilayer structure comprising in order: a (111)-oriented single crystal semiconductor substrate, said substrate being doped or undoped and being selected from the group consisting of GaP, InP, InAs, GaSb, Al x Ga 1-x As, and Si x Ge 1-x , wherein x is from 0 to 1; and an epitaxial (111)MgO buffer layer.
Claim 18
Dependent Claim
17 words
The multilayer structure of claim 14 further comprising a nonlinear optical film deposited on said buffer layer.
Claim 19
Dependent Claim
31 words
The multilayer structure of claim 14 further comprising an epitaxial film of (0001)LiNb x Ta 1-x O 3 , wherein x is from 0 to 1, deposited on said buffer layer.
Claim 20
Dependent Claim
22 words
The multilayer structure of claim 16 wherein said substrate is Al x Ga 1-x As, wherein x is from 0 to 1.
Claim 21
Dependent Claim
11 words
The multilayer structure of claim 16 wherein said substrate is GaAs.
Claim 22
Dependent Claim
22 words
The multilayer structure of claim 14 wherein said substrate is Al x Ga 1-x As, wherein x is from 0 to 1.
References Cited (Backward Citations)
JPH02184599A
Cited
US5227011A
Cited
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