US5227011A
Expired / Lapsed
US
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Method for producing a second harmonic wave generating device
Assignee: Ibiden Co Ltd
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Filing: 1992-06-01
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Granted: 1993-07-13
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Expires: 2012-06-01
Abstract
Abstract A method for producing a second harmonic wave generating device comprises the steps of: forming a LiTaO 3 thin film adjusted to have an ordinary refractive index (n oS1 ) of 2.00 to 2.20 at a fundamental wavelength (λμm) and an extraordinary refractive index (n eS2 ) of 2.15 to 2.35 at a second harmonic wavelength (λμm/2) on a LiNbO 3 substrate; forming a LiNbO 3 thin film on top of the LiTaO 3 thin film, the LiNbO 3 thin film adjusted to have an ordinary refractive index (n oF1 ) at λμm and an extraordinary refractive index (n eF2 ) at λμm/2 represented by the equation: ##EQU1## dry etching the LiNbO 3 thin film to form an LiNbO 3 thin film having a thickness of 0.1 to 30 μm.
Inventors
- 👤 Ryo Enomoto
- 👤 Masaya Yamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 13:46
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/35; G02F1/37; G02F1/377
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
130 words
A method for producing a second harmonic wave generating device comprising the steps of forming a LiTaO 3 thin film adjusted to have an ordinary refractive index (n oS1 ) of 2.00 to 2.20 at a fundamental wavelength (λμm) and an extraordinary refractive index (n eS2 ) of 2.15 to 2.35 at a second harmonic wavelength (λμm/2) on a LiNbO 3 substrate; forming a LiNbO 3 thin film on top of said LiTaO 3 thin film, said LiNbO 3 thin film adjusted to have an ordinary refractive index (n oF1 ) at λμm and an extraordinary refractive index (n eF2 ) at λμm/2 represented by the equation: ##EQU13## dry etching said LiNbO 3 thin film to form an LiNbO 3 thin film having a thickness of 0.1 to 30 μm.
Claim 2
Independent Claim
130 words
A method for producing a second harmonic wave generating device comprising the steps of forming a LiTaO 3 thin film adjusted to have an ordinary refractive index (n oS1 ) of 2.00 to 2.20 at a fundamental wavelength (λμm) and an extraordinary refractive index (n eS2 ) of 2.15 to 2.35 at a second harmonic wavelength (λμm/2) on a LiNbO 3 substrate; forming a LiNbO 3 thin film on top of said LiTaO 3 thin film, said LiNbO 3 thin film adjusted to have an ordinary refractive index (n oF1 ) at λμm and an extraordinary refractive index (n eF2 ) at λμm/2 represented by the equation: ##EQU13## dry etching said LiNbO 3 thin film to form an LiNbO 3 thin film having a thickness of 0.1 to 30 μm.
Claim 3
Dependent Claim
37 words
The method for producing a second harmonic wave generating device of claim 1, wherein the n oS1 and the n eS2 of said LiTaO 3 thin film are adjusted by varying the content of a hetero-element therein.
Claim 4
Dependent Claim
34 words
The method for producing a second harmonic wave generating device of claim 2, wherein said hetero-element is at least one element selected from the group consisting of Na, Mg, Cr, Nd, Ti and V.
Claim 5
Dependent Claim
37 words
The method for producing a second harmonic wave generating device of claim 1, wherein the n oF1 and the n eF2 of said LiNbO 3 thin film are adjusted by varying the content of a hetero-element therein.
Claim 6
Dependent Claim
34 words
The method for producing a second harmonic wave generating device of claim 4, wherein said hetero-element is at least one element selected from the group consisting of Na, Mg, Cr, Nd, Ti and V.
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