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EP0364214B1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Optical wavelength conversion devices

Assignee: Sony Corp
•
Filing: 1989-10-10
•
Granted: 1995-01-11
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Expires: 2009-10-10
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Abstract

No abstract record available.

Inventors

  • 👤 Masahiro C/O Patents Division Sony Corp. Yamada

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-05 17:44
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/13; G02B6/136; G02F; G02F1/00; G02F1/35; G02F1/37; G02F1/377; G02F1/374

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 308 words
An optical wavelength conversion device comprising: an optical waveguide (2) formed on a substrate (1) of a non-linear optical material so as to generate a secondary harmonic wave by Cerenkov radiation, the waveguide (2) comprising a first waveguide passage (2a, 2c) for confining a fundamental wave and converting it into a secondary harmonic wave, and a second waveguide passage (2b) for confining said secondary harmonic wave and propagating it towards an end face for emission therefrom, characterised in that: said waveguide (2) is formed in a ridge shape on said substrate (1), and said first waveguide passage (2a, 2c) is formed so as to be in contact with said second waveguide passage (2b) along at least one of the lateral sides of the ridge; and in that n₂ > n₃ > n₁, where n₁, n₂ and n₃ are, respectively, the refractive indices of said substrate (1), said first waveguide passage (2a, 2c) and said second waveguide passage (2b); and in that said first and second waveguide passages (2a, 2c, 2b) are formed so as to satisfy: W r f < a < W r s, W r f or W r s < b, and W r s < c where a is the width of said first waveguide passage (2a, 2c) in a direction which is parallel to said substrate (1), b is the depth of said first waveguide passage (2a, 2c) in a direction which is perpendicular to the face of said substrate (1), c is the depth of said second waveguide passage (2b) in a direction which is perpendicular to the face of said substrate (1), W r f is the fundamental wave cut-off thickness below which propagation of the fundamental wave is prevented, and W r s is the secondary harmonic wave cut-off thickness below which propagation of the secondary harmonic wave is prevented.
Claim 2
Dependent Claim 216 words
A process for manufacturing an optical wavelength conversion device according to claim 1, comprising the steps of: forming, on a substrate (1) of a non-linear optical material which has a refractive index n1, an optical waveguide layer (1 Ti ) which is to be used as a second waveguide passage (2b) and which has a refractive index n₃ (n₃ > n₁) by diffusion of titanium; forming a metal layer (3) on said substrate (1); selectively forming a photoresist layer (4) on said metal layer (3); selectively removing said metal layer (3) where it is not masked with said photoresist layer (4) using electron cyclotron resonance etching with argon gas; removing said photoresist layer (4); etching out a ridge on said substrate (1) using said metal layer (3) as a mask (3a) by electron cyclotron resonance etching using a fluorocarbon gas; forming, on a lateral side of said optical waveguide layer (2), a proton exchange layer (5) which is to be used as a first waveguide passage (2a, 2c) and which has a refractive index n₂ (n₂ > n₃ > n₁), by a heat treatment in an aqueous solution capable of proton exchange with optical waveguide portions which are exposed by removal of said metal layer (3); and removing the remaining portions of said metal layer (3).
Claim 3
Dependent Claim 211 words
A process for manufacturing an optical wavelength conversion device according to claim 1, comprising the steps of: forming, on a substrate (1) of a non-linear optical material which has a refractive index n1, an optical waveguide layer (1 Ti ) which is to be used as a second waveguide passage (2b) and which has a refractive index n₃ (n₃ > n₁) by diffusion of titanium; forming a metal layer (3) on said substrate (1); selectively forming a photoresist layer (4) on said metal layer (3); selectively removing a part of said metal layer (3) and said optical waveguide layer (2), using said photoresist layer (4) as a mask; forming, on a lateral side of said optical waveguide layer (2), a proton exchange layer (5) which is to be used as a first waveguide passage (2a, 2c) and which has a refractive index n₂ (n₂ > n₃ > n₁), by a heat treatment in an aqueous solution capable of proton exchange with optical waveguide portions which are exposed by removal of said metal layer (3); etching said proton exchange layer (5) into a thin layer by reactive ion etching using selectively unremoved portions of said metal layer (3) as a mask (3a); and removing the remaining portions of said metal layer (3).

References Cited (Backward Citations)

EP0310435A2 Cited

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