Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
218 words
A circuit comprising: a gate array base having multiple transistor rows, each transistor row containing multiple transistors of a given type, alternate rows containing transistors of opposite types formed in wells of opposite-type diffusion, said wells having defined therein well tie-down regions; a first metal layer including first power supply busses for supplying operating and reference voltages to said transistors, said first power supply busses extending in a row direction and at least partially overlapping said well tie-down regions; a second metal layer including second power supply busses for supplying operating and reference voltages to said transistors, said second power supply busses extending a column direction and at least partially overlapping said well tie-down regions and said first power supply busses; vias connecting said first and second power supply busses each supplying a same one of said operating voltage and said reference voltage; and contacts connecting ones of said first power supply busses and ones of said well tie-down regions; of said vias and contacts, only said vias being formed where first and second power supply busses each supplying a same one of said operating voltage and said reference voltage overlap and only said contacts being formed where first and second power supply busses each supplying a different one of said operating voltage and said reference voltage overlap.
Claim 2
Dependent Claim
218 words
A circuit comprising: a gate array base having multiple transistor rows, each transistor row containing multiple transistors of a given type, alternate rows containing transistors of opposite types formed in wells of opposite-type diffusion, said wells having defined therein well tie-down regions; a first metal layer including first power supply busses for supplying operating and reference voltages to said transistors, said first power supply busses extending in a row direction and at least partially overlapping said well tie-down regions; a second metal layer including second power supply busses for supplying operating and reference voltages to said transistors, said second power supply busses extending a column direction and at least partially overlapping said well tie-down regions and said first power supply busses; vias connecting said first and second power supply busses each supplying a same one of said operating voltage and said reference voltage; and contacts connecting ones of said first power supply busses and ones of said well tie-down regions; of said vias and contacts, only said vias being formed where first and second power supply busses each supplying a same one of said operating voltage and said reference voltage overlap and only said contacts being formed where first and second power supply busses each supplying a different one of said operating voltage and said reference voltage overlap.
Claim 3
Dependent Claim
27 words
The apparatus of claim 1 wherein first power supply busses for supplying said operating voltage and first power supply busses for supplying said reference voltage are alternated.
Claim 4
Dependent Claim
27 words
The apparatus of claim 2 wherein second power supply busses for supplying said operating voltage and second power supply busses for supplying said reference voltage are alternated.
Claim 5
Dependent Claim
26 words
The apparatus of claim 2 wherein one of said first power supply busses and said second power supply busses overlap said well tie-down regions substantially entirely.
Claim 6
Dependent Claim
29 words
The apparatus of claim 3 wherein one of said first and second power supply busses are of a width substantially equal to a width of said well tie-down regions.
Claim 7
Dependent Claim
36 words
The apparatus of claim 3 wherein one of said first and second power supply busses are of a width substantially equal to a width of an area between groups of transistor pairs in a row direction.
Claim 8
Dependent Claim
33 words
The apparatus of claim 1 wherein each of said vias is separated form a closest one of said contacts a distance not substantially less than a height of one of said transistor rows.