US5339273A
Expired / Lapsed
US
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Semiconductor memory device having a testing function and method of testing the same
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1991-12-13
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Granted: 1994-08-16
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Expires: 2011-12-13
Abstract
Abstract A semiconductor memory device is provided with a plurality of bit lines, a plurality of word lines, a memory cell array including a plurality of memory cells each coupled to one bit line and one word line, and a varying part for varying a capacitance of at least a selected one of the bit lines in response to a predetermined signal which indicates a test mode in which an operation of the semiconductor memory device is tested.
Inventors
- 👤 Masao Taguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:09
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/02; G11C29/026; G11C29/04; G11C29/50; G11C29/50012; G11C5/00; G11C5/06; G11C5/063; G11C7/00; G11C7/18; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
174 words
A semiconductor memory device comprising: a sense amplifier; two bit line pairs coupled to said sense amplifier via switches; a plurality of word lines; at least one memory cell array including a plurality of memory cells, each of the memory cells being coupled to one bit line pair and one word line; and varying means, coupled to the bit lines, for varying a capacitance of at least a selected one of the bit line pairs in response to a predetermined signal which indicates a test mode in which an operation of the semiconductor memory device is tested, said varying means for increasing the capacitance of the selected bit line pair in the test mode compared to the capacitance of the selected bit line pair during normal read/write operation of the semiconductor memory device, whereby when said two bit line pairs are connected to said sense amplifier via said switches in the test mode, said selected bit line pair functions as a capacitor when the other of the two bit line pairs is in use.
Claim 2
Dependent Claim
174 words
A semiconductor memory device comprising: a sense amplifier; two bit line pairs coupled to said sense amplifier via switches; a plurality of word lines; at least one memory cell array including a plurality of memory cells, each of the memory cells being coupled to one bit line pair and one word line; and varying means, coupled to the bit lines, for varying a capacitance of at least a selected one of the bit line pairs in response to a predetermined signal which indicates a test mode in which an operation of the semiconductor memory device is tested, said varying means for increasing the capacitance of the selected bit line pair in the test mode compared to the capacitance of the selected bit line pair during normal read/write operation of the semiconductor memory device, whereby when said two bit line pairs are connected to said sense amplifier via said switches in the test mode, said selected bit line pair functions as a capacitor when the other of the two bit line pairs is in use.
Claim 3
Dependent Claim
37 words
The semiconductor memory device as claimed in claim 1, wherein each memory cell includes a transistor which is connected to one bit line and one word line, and a storage capacitor which is connected to the transistor.
Claim 4
Dependent Claim
42 words
The semiconductor memory device as claimed in claim 1, wherein said sense amplifier, coupled to the bit line pairs, is further for amplifying a potential difference of a selected bit line pair during the normal read/write operation and in the test mode.
Claim 5
Dependent Claim
61 words
The semiconductor memory device as claimed in claim 3, wherein a test data pattern is written into and read out from the memory cells coupled to the selected bit line pair in the test mode, so that a defect including a leak of the memory cell and a poor sensitivity of the sense amplifier is detectable from the read test data.
Claim 6
Dependent Claim
215 words
A semiconductor memory device comprising: at least first and second bit line groups respectively including a plurality of bit lines; a plurality of word lines; at least first and second memory cell arrays respectively including a plurality of memory cells, each of the memory cells of the first memory cell array being coupled to one bit line of the first bit line group and one word line, each of the memory cells of the second memory cell array being coupled to one bit line of the second bit line group and one word line; a sense amplifier for amplifying a potential difference on a selected bit line pair; and switching means, coupled to the first and second bit line groups and responsive to a control signal, for coupling one of the first and second bit line groups to the sense amplifier during a normal read/write operation of the semiconductor memory device and for coupling both the first and second bit line groups to the sense amplifier in a test mode in which an operation of the semiconductor memory device is tested, the bit line of the first bit line group having a first capacitance during the normal read/write operation and having a second capacitance which is greater than the first capacitance in the test mode.
Claim 7
Dependent Claim
215 words
A semiconductor memory device comprising: at least first and second bit line groups respectively including a plurality of bit lines; a plurality of word lines; at least first and second memory cell arrays respectively including a plurality of memory cells, each of the memory cells of the first memory cell array being coupled to one bit line of the first bit line group and one word line, each of the memory cells of the second memory cell array being coupled to one bit line of the second bit line group and one word line; a sense amplifier for amplifying a potential difference on a selected bit line pair; and switching means, coupled to the first and second bit line groups and responsive to a control signal, for coupling one of the first and second bit line groups to the sense amplifier during a normal read/write operation of the semiconductor memory device and for coupling both the first and second bit line groups to the sense amplifier in a test mode in which an operation of the semiconductor memory device is tested, the bit line of the first bit line group having a first capacitance during the normal read/write operation and having a second capacitance which is greater than the first capacitance in the test mode.
Claim 8
Dependent Claim
33 words
The semiconductor memory device as claimed in claim 5, wherein said sense amplifier is shared by the first and second memory cell array during the normal read/write operation and in the test mode.
Claim 9
Dependent Claim
37 words
The semiconductor memory device as claimed in claim 5, wherein each memory cell includes a transistor which is connected to one bit line and one word line, and a storage capacitor which is connected to the transistor.
Claim 10
Dependent Claim
71 words
The semiconductor memory device as claimed in claim 6, wherein a test data pattern is written into and read out from the memory cells coupled to a selected bit line pair of one of the first and second memory cell arrays in the test mode, so that a defect including a leak of the memory cell and a poor sensitivity of the sense amplifier is detectable from the read test data.
Claim 11
Dependent Claim
75 words
The semiconductor memory device as claimed in claim 5, which further comprises circuit means for generating the control signal which controls switching of said switching means during the normal read/write operation based on an address signal, and the control signal generated by said circuit means forcibly switches the switching means to couple both the first and second bit line groups to the sense amplifier in response to a predetermined signal which indicates the test mode.
Claim 12
Dependent Claim
24 words
The semiconductor memory device as claimed in claim 9, wherein the predetermined signal is an external signal received from outside the semiconductor memory device.
Claim 13
Independent Claim
209 words
A method of testing an operation of a semiconductor memory device which comprises a sense amplifier, two bit line pairs coupled to said sense amplifier via switches, a plurality of word lines, at least one memory cell array including a plurality of memory cells, each of the memory cells being coupled to one bit line pair and one word line, said method comprising the steps of: (a) varying a capacitance of at least a selected one of the bit line pairs in a test mode in which the operation of the semiconductor memory device is tested; (b) writing test data into the memory cells coupled to the other of the bit line pairs; and (c) reading the stored test data from the memory cells coupled to the other bit line pair; wherein in step (a), the capacitance of the selected bit line pair is increased in the test mode compared to the capacitance of the selected bit line pair during nornal read/write operation of the semiconductor memory device, whereby when said two bit line pairs are connected to said sense amplifier via said switches in the test mode, said selected bit line pair functions as a capacitor when the other of the two bit line pairs is in use.
Claim 14
Independent Claim
209 words
A method of testing an operation of a semiconductor memory device which comprises a sense amplifier, two bit line pairs coupled to said sense amplifier via switches, a plurality of word lines, at least one memory cell array including a plurality of memory cells, each of the memory cells being coupled to one bit line pair and one word line, said method comprising the steps of: (a) varying a capacitance of at least a selected one of the bit line pairs in a test mode in which the operation of the semiconductor memory device is tested; (b) writing test data into the memory cells coupled to the other of the bit line pairs; and (c) reading the stored test data from the memory cells coupled to the other bit line pair; wherein in step (a), the capacitance of the selected bit line pair is increased in the test mode compared to the capacitance of the selected bit line pair during nornal read/write operation of the semiconductor memory device, whereby when said two bit line pairs are connected to said sense amplifier via said switches in the test mode, said selected bit line pair functions as a capacitor when the other of the two bit line pairs is in use.
Claim 15
Dependent Claim
44 words
The method as claimed in claim 11, wherein in said step (c), said sense amplifier, coupled to the bit line pairs, is further for amplifying a potential difference of a selected bit line pair during the normal read/write operation and in the test mode.
Claim 16
Dependent Claim
60 words
The method as claimed in claim 12, wherein the test data pattern is read out from the memory cells coupled to the other bit line pair by said step (c) in the test mode, so that a defect including a leak of the memory cell and a poor sensitivity of the sense amplifier is detectable from the read test data.
Claim 17
Dependent Claim
188 words
The method as claimed in claim 11, wherein the semiconductor memory device includes at least first and second bit line groups respectively including the pairs of bit lines, at least first and second memory cell arrays respectively including the plurality of memory cells, each of the memory cells of the first memory cell array being coupled to one bit line of the first bit line group and one word line, each of the memory cells of the second memory cell array being coupled to one bit line of the second bit line group and one word line, and a sense amplifier for amplifying a potential difference on a selected bit line pair, one of the first and second bit line groups being coupled to the sense amplifier during a normal read/write operation of the semiconductor memory device, said step (a) coupling both the first and second bit line groups to the sense amplifier in the test mode so that the bit line of the first bit line group has a first capacitance which is greater than a second capacitance of the bit line during the normal read/write operation.
Claim 18
Independent Claim
298 words
A method of testing an operation of a semiconductor memory device which comprises a plurality of bit lines, a plurality of word lines, at least one memory cell array including a plurality of memory cells, each of the memory cells being coupled to one bit line and one word line, said method comprising the steps of: (a) varying a capacitance of at least a selected one of the bit lines in a test mode in which the operation of the semiconductor memory device is tested; (b) writing test data into the memory cells coupled to a selected bit line; and (c) reading the stored test data from the memory cells coupled to the selected bit line; wherein the semiconductor memory device includes at least first and second bit line groups respectively including the plurality of bit lines, at least first and second memory cell arrays respectively including the plurality of memory cells, each of the memory cells of the first cell array being coupled to one bit line of the first bit line group and one word line, each of the memory cells of the second memory cell array being coupled to one bit line of the second bit line group and one word line, and a sense amplifier for amplifying a potential difference on a selected bit line pair, one of the first and second bit line groups being coupled to the sense amplifier during a normal read/write operation of the semiconductor memory device; and in said step (a), coupling both the first and second bit line groups to the sense amplifier in the test mode so that the bit line of the first bit line group has a first capacitance which is greater than a second capacitance of the bit line during the nornal read/write operation.
Claim 19
Independent Claim
298 words
A method of testing an operation of a semiconductor memory device which comprises a plurality of bit lines, a plurality of word lines, at least one memory cell array including a plurality of memory cells, each of the memory cells being coupled to one bit line and one word line, said method comprising the steps of: (a) varying a capacitance of at least a selected one of the bit lines in a test mode in which the operation of the semiconductor memory device is tested; (b) writing test data into the memory cells coupled to a selected bit line; and (c) reading the stored test data from the memory cells coupled to the selected bit line; wherein the semiconductor memory device includes at least first and second bit line groups respectively including the plurality of bit lines, at least first and second memory cell arrays respectively including the plurality of memory cells, each of the memory cells of the first cell array being coupled to one bit line of the first bit line group and one word line, each of the memory cells of the second memory cell array being coupled to one bit line of the second bit line group and one word line, and a sense amplifier for amplifying a potential difference on a selected bit line pair, one of the first and second bit line groups being coupled to the sense amplifier during a normal read/write operation of the semiconductor memory device; and in said step (a), coupling both the first and second bit line groups to the sense amplifier in the test mode so that the bit line of the first bit line group has a first capacitance which is greater than a second capacitance of the bit line during the nornal read/write operation.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-15 | 1998-02-14 | 1998-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-15 | 2002-02-14 | 2002-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-15 | 2006-02-14 | 2006-08-16 | $7700.00 | Window Closed / Lapsed |