US5338400A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Micromachining process for making perfect exterior corner in an etchable substrate
Assignee: Measurement Specialties Inc
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Filing: 1993-02-25
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Granted: 1994-08-16
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Expires: 2013-02-25
Abstract
Abstract A process for forming a three-dimensional structure etched in a substrate with perfect convex corners includes partitioning the structure into two features such that the exterior corners are formed by the intersection of the two features; etching the first feature; forming an etch mask on the surface and on the substrate of the etched first feature; opening a window in the etch mask on the substrate to define the second feature; and etching the second feature, thereby obtaining the desired structure.
Inventors
- 👤 John H. Jerman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:23
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B33/00; C30B33/08; C30B33/10; H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/693
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
88 words
A process for forming a three-dimensional structure having at least one exterior corner in an etchable substrate comprising: partitioning said structure into a first feature and a second feature, such that the exterior corners are formed by an intersection of the two features; etching said first feature; forming an etch mask on the surface and on the substrate of the etched first feature; opening a window in the etch mask on the substrate to define said second feature; and etching said second feature, thereby obtaining said exterior corner.
Claim 2
Dependent Claim
88 words
A process for forming a three-dimensional structure having at least one exterior corner in an etchable substrate comprising: partitioning said structure into a first feature and a second feature, such that the exterior corners are formed by an intersection of the two features; etching said first feature; forming an etch mask on the surface and on the substrate of the etched first feature; opening a window in the etch mask on the substrate to define said second feature; and etching said second feature, thereby obtaining said exterior corner.
Claim 3
Dependent Claim
27 words
A process as defined in claim 1, wherein said window for the second feature surrounds at the substrate principal surface one end of the etched first feature.
Claim 4
Dependent Claim
31 words
A process as defined in claim 1, wherein said first feature is a set of parallel grooves and said second feature is a groove perpendicular to the set of parallel grooves.
Claim 5
Dependent Claim
18 words
A process as defined in claim 3, wherein said first and second grooves are V-shaped in cross section.
Claim 6
Dependent Claim
20 words
A process as defined in claim 4, wherein said set of grooves are narrower and shallower than said second feature.
Claim 7
Dependent Claim
18 words
A process as defined in claim 1, wherein the step of etching said first feature comprises isotropic etching.
Claim 8
Dependent Claim
102 words
A process for forming a three-dimensional structure having at least one exterior corner in an etchable substrate comprising: partitioning said structure into a first feature and a second feature such that said exterior corner is formed by the intersection of the two features; defining said second feature in a mask layer on a surface of said wafer; oxidizing the remainder of said wafer; patterning said first feature on said oxide; etching said first feature; oxidizing said wafer to grow oxide on the surface of the etched first feature; removing said mask layer; and etching said second feature, thereby obtaining said exterior corner.
Claim 9
Dependent Claim
102 words
A process for forming a three-dimensional structure having at least one exterior corner in an etchable substrate comprising: partitioning said structure into a first feature and a second feature such that said exterior corner is formed by the intersection of the two features; defining said second feature in a mask layer on a surface of said wafer; oxidizing the remainder of said wafer; patterning said first feature on said oxide; etching said first feature; oxidizing said wafer to grow oxide on the surface of the etched first feature; removing said mask layer; and etching said second feature, thereby obtaining said exterior corner.
Claim 10
Dependent Claim
32 words
A process as defined in claim 7, wherein said second feature as defined in the mask layer surrounds at the principal surface at the substrate one end of the etched first feature.
Claim 11
Dependent Claim
31 words
A process as defined in claim 7, wherein said first feature is a set of parallel grooves, and said second feature is a groove perpendicular to said set of parallel grooves.
Claim 12
Dependent Claim
15 words
A process as defined in claim 9, wherein said first and second grooves are V-shaped.
Claim 13
Dependent Claim
22 words
A process as defined in claim 10, wherein each of said set of grooves is narrower and shallower than said second feature.
Claim 14
Dependent Claim
18 words
A process as defined in claim 7, wherein the step of etching said first feature comprises isotropic etching.
Claim 15
Dependent Claim
17 words
A process as defined in claim 7, wherein the removing of said mask layer uses plasma etch.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-15 | 1998-02-14 | 1998-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-15 | 2002-02-14 | 2002-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-15 | 2006-02-14 | 2006-08-16 | $7700.00 | Window Closed / Lapsed |