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US5338370A
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US
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Photovoltaic device
Assignee: Canon Inc
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Filing: 1992-05-05
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Granted: 1994-08-16
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Expires: 2012-05-05
Abstract
Abstract A photovoltaic device produced by successively laminating on a conductive substrate a transparent conductive layer, a silicon containing non-monocrystal layer of a first conductivity type; a silicon containing non-monocrystal layer of an i-type; a silicon containing non-monocrystal layer of a second conductivity type different from the first conductivity type; and an electrode, wherein the silicon containing non-monocrystal layer of the first conductivity type contains at least one element which constitutes the transparent conductive layer.
Inventors
- 👤 Tatsuyuki Aoike
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:34
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F10/00; H10F10/10; H10F10/17; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
103 words
A photovoltaic device produced by the process which comprises forming, in sequence, on a transparent conductive layer of at least one of In 2 O 3 , ITO, ZnO, CdO, CdSnO 4 , TiO 2 , and Ti 2 N 3 ; (a) a non-monocrystalline layer of a first conductivity type containing Si atoms and at least one metallic element constituting said transparent conductive layer to enhance and maintain photoelectric conversion efficiency; (b) a non-monocrystalline layer of an i-type and containing Si atoms; and (c) a non-monocrystalline layer of a second conductivity type different from the first conductivity type and containing Si atoms.
Claim 2
Dependent Claim
103 words
A photovoltaic device produced by the process which comprises forming, in sequence, on a transparent conductive layer of at least one of In 2 O 3 , ITO, ZnO, CdO, CdSnO 4 , TiO 2 , and Ti 2 N 3 ; (a) a non-monocrystalline layer of a first conductivity type containing Si atoms and at least one metallic element constituting said transparent conductive layer to enhance and maintain photoelectric conversion efficiency; (b) a non-monocrystalline layer of an i-type and containing Si atoms; and (c) a non-monocrystalline layer of a second conductivity type different from the first conductivity type and containing Si atoms.
Claim 3
Dependent Claim
120 words
A photovoltaic device comprising: a conductive substrate; a transparent conductive layer on said conductive substrate; a non-monocrystalline layer of a first conductivity type and containing Si atoms on said transparent conductive layer; a non-monocrystalline layer of an i-type and containing Si atoms on said non-monocrystalline layer of the first conductivity type; a non-monocrystalline layer of a second conductivity type different from the first conductivity type and containing Si atoms on said i-type non-monocrystalline layer; and an electrode on said non-monocrystalline layer of the second conductivity type; wherein said transparent conductive layer is at least one of Au, Al, and Cu and said non-monocrystalline layer of the first conductivity type contains at least one metallic element constituting said transparent conductive layer.
Claim 4
Dependent Claim
120 words
A photovoltaic device comprising: a conductive substrate; a transparent conductive layer on said conductive substrate; a non-monocrystalline layer of a first conductivity type and containing Si atoms on said transparent conductive layer; a non-monocrystalline layer of an i-type and containing Si atoms on said non-monocrystalline layer of the first conductivity type; a non-monocrystalline layer of a second conductivity type different from the first conductivity type and containing Si atoms on said i-type non-monocrystalline layer; and an electrode on said non-monocrystalline layer of the second conductivity type; wherein said transparent conductive layer is at least one of Au, Al, and Cu and said non-monocrystalline layer of the first conductivity type contains at least one metallic element constituting said transparent conductive layer.
Claim 5
Dependent Claim
32 words
A photovoltaic device according to claims 1 or 2, wherein the metallic element contained in said non-monocrystalline layer of the first conductivity type has a concentration of 0.1 atom ppm-1 atom ppm.
Claim 6
Dependent Claim
32 words
A photovoltaic device according to claims 1 or 2, wherein the metallic element contained in said non-monocrystalline layer of the first conductivity type has a concentration of 1 atom ppm-1000 atom ppm.
Claim 7
Dependent Claim
32 words
A photovoltaic device according to claims 1 or 2, wherein the metallic element contained in said non-monocrystalline layer of the first conductivity type has a concentration of 10 atom ppm-100 atom ppm.
Claim 8
Dependent Claim
28 words
A photovoltaic device according to claims 1 or 2, wherein said non-monocrystalline layer of the first conductivity type further contains carbon in a concentration of 5-50 atomic %.
Claim 9
Dependent Claim
19 words
A photovoltaic device according to claims 1 or 2, wherein said non-monocrystalline layer of the i-type further contains Ge.
Claim 10
Dependent Claim
19 words
A photovoltaic device according to claims 1 or 2, wherein said non-monocrystalline layer of the i-type further contains C.
Claim 11
Dependent Claim
25 words
A photovoltaic device according to claims 1 or 2, wherein said non-monocrystalline layer of the first conductivity type has a thickness of 1 nm-50 nm.
Claim 12
Dependent Claim
48 words
A photovoltaic device according to claim 1, wherein said transparent conductive layer is a metal oxide selected from the group consisting of In 2 O 3 , ITO, ZnO, CdO, CdSnO 4 , and TiO 2 and said non-monocrystalline layer of the first conductivity type further includes oxygen.
Claim 13
Dependent Claim
29 words
A photovoltaic device according to claim 1, wherein said transparent conductive layer is Ti 2 N 3 and said non-monocrystalline layer of the first conductivity type further contains nitrogen.
Claim 14
Dependent Claim
23 words
A photovoltaic device according to claims 1 or 2, wherein said non-monocrystalline layer of an i-type has a thickness of 100 nm-1000 nm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-08-15 | 1998-02-14 | 1998-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-15 | 2002-02-14 | 2002-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-15 | 2006-02-14 | 2006-08-16 | $7700.00 | Window Closed / Lapsed |