Patent US5336327A successfully refreshed from Google Patents.
US5336327A
Expired / Lapsed
US
⏱️ 0.0 years remaining
CVD reactor with uniform layer depositing ability
Assignee: NXP USA Inc
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Filing: 1993-11-19
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Granted: 1994-08-09
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Expires: 2013-11-19
Abstract
Abstract A CVD reactor with a flat generally rectangularly shaped susceptor having a leading edge including a curve which is concave in the direction of gas flow through the reactor. The reactor produces epitaxial layers on semiconductor wafers in which the uniformity of the layer is dependent upon the radius of the concave curvature.
Inventors
- 👤 Hsing-Chung Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:22
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4584; C23C16/455; C23C16/45587; C23C16/45591; C30; C30B; C30B25/00; C30B25/02; C30B25/12; C30B25/14
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
155 words
A CVD reactor comprising: a housing defining a cavity having a generally flat surface with a wafer receiving rotatable platform mounted therein, the housing further including a gas inlet to one side of the platform and a gas outlet to an opposite side of the platform for causing gas introduced into the cavity through the gas inlet to flow across a portion of the flat surface and the platform; a substantially flat susceptor positioned on the flat surface of the cavity and substantially surrounding the rotatable platform so that gas flowing across the portion of the flat surface and platform flows across the susceptor, the susceptor having a leading edge extending from one side of a line through the gas inlet, the rotatable platform and the gas outlet to a side of the line opposite the one side; and the leading edge of the susceptor having a generally concave curvature relative to the gas inlet.
Claim 2
Dependent Claim
155 words
A CVD reactor comprising: a housing defining a cavity having a generally flat surface with a wafer receiving rotatable platform mounted therein, the housing further including a gas inlet to one side of the platform and a gas outlet to an opposite side of the platform for causing gas introduced into the cavity through the gas inlet to flow across a portion of the flat surface and the platform; a substantially flat susceptor positioned on the flat surface of the cavity and substantially surrounding the rotatable platform so that gas flowing across the portion of the flat surface and platform flows across the susceptor, the susceptor having a leading edge extending from one side of a line through the gas inlet, the rotatable platform and the gas outlet to a side of the line opposite the one side; and the leading edge of the susceptor having a generally concave curvature relative to the gas inlet.
Claim 3
Dependent Claim
16 words
A CVD reactor as claimed in claim 1 wherein the susceptor is formed substantially of graphite.
Claim 4
Dependent Claim
20 words
A CVD reactor as claimed in claim 1 wherein the platform is constructed to receive a semiconductor wafer positioned thereon.
Claim 5
Dependent Claim
25 words
A CVD reactor as claimed in claim 1 wherein the platform is constructed to receive a wafer up to 8 inches in diameter positioned thereon.
Claim 6
Dependent Claim
17 words
A CVD reactor as claimed in claim 3 wherein the reactor includes apparatus for growing epitaxial layers.
Claim 7
Dependent Claim
31 words
A CVD reactor as claimed in claim 1 wherein the leading edge of the susceptor with a concave curvature includes a curve having a radius in the range of 8-15 cm.
Claim 8
Dependent Claim
33 words
A CVD reactor as claimed in claim 1 wherein the leading edge of the susceptor includes a shape and curvature determined by a lateral gas velocity profile upstream of the susceptor leading edge.
Claim 9
Dependent Claim
21 words
A CVD reactor as claimed in claim 1 wherein the substantially flat susceptor includes a susceptor which is generally rectangularly shaped.
Claim 10
Dependent Claim
16 words
A CVD reactor as claimed in claim 1 wherein the reactor is the rectangular horizontal type.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-08 | 1998-02-07 | 1998-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-08 | 2002-02-07 | 2002-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-08 | 2006-02-07 | 2006-08-09 | $7700.00 | Window Closed / Lapsed |