US5335200A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High voltage negative charge pump with low voltage CMOS transistors
Assignee: Texas Instruments Inc
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Filing: 1993-01-05
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Granted: 1994-08-02
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Expires: 2013-01-05
Abstract
Abstract An improved negative charge pump system for erasing a memory array in a memory which has a supply voltage and a negative charge pump. The negative charge pump system includes (a) a device for selecting a memory array to be erased; (b) a device for switching on the supply voltage Vnn for the charge pump; (c) a device for pumping the supply voltage Vnn with the charge pump to produce a pumped negative voltage; (d) a device for erasing the selected array with the pumped negative voltage; (e) a device for stopping the pumping; and (f) a device for providing a discharge path for voltages trapped in the charge pump.
Inventors
- 👤 Tim M. Coffman
- 👤 Sung-Wei Lin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 04:09
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/10; G11C16/14; G11C16/30; G11C5/00; G11C5/14; G11C5/145
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
101 words
A method for erasing a memory array in a memory which has a supply voltage and a negative charge having multiple stages, comprising the steps of: (a) selecting a memory array to be erased; (b) applying the supply voltage to the charge pump; (c) pumping the supply voltage to produce a pumped negative voltage from a negative at each of said multiple stages of said negative charge pump; (d) erasing the selected array with the pumped negative voltage; (e) stopping said erasing; and (f) providing a separate discharge path for the negative voltage trapped in each stage of the charge pump.
Claim 2
Independent Claim
101 words
A method for erasing a memory array in a memory which has a supply voltage and a negative charge having multiple stages, comprising the steps of: (a) selecting a memory array to be erased; (b) applying the supply voltage to the charge pump; (c) pumping the supply voltage to produce a pumped negative voltage from a negative at each of said multiple stages of said negative charge pump; (d) erasing the selected array with the pumped negative voltage; (e) stopping said erasing; and (f) providing a separate discharge path for the negative voltage trapped in each stage of the charge pump.
Claim 3
Dependent Claim
119 words
An improved negative charge pump system for erasing a memory array in a memory which has a supply voltage and a negative charge pump having multiple stages, comprising: (a) means for selecting a memory array to be erased; (b) means for applying the supply voltage to the charge pump; (c) means for pumping the supply voltage to produce a pumped negative voltage from a negative voltage at each of said multiple stages of said negative charge pump; (d) means for erasing the selecting array with the pumped negative voltage; (e) means for stopping said erasing; and (f) means for providing a separate discharge path for each of said negative voltages trapped in each said stage of the charge pump.
Claim 4
Dependent Claim
119 words
An improved negative charge pump system for erasing a memory array in a memory which has a supply voltage and a negative charge pump having multiple stages, comprising: (a) means for selecting a memory array to be erased; (b) means for applying the supply voltage to the charge pump; (c) means for pumping the supply voltage to produce a pumped negative voltage from a negative voltage at each of said multiple stages of said negative charge pump; (d) means for erasing the selecting array with the pumped negative voltage; (e) means for stopping said erasing; and (f) means for providing a separate discharge path for each of said negative voltages trapped in each said stage of the charge pump.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-01 | 1998-01-31 | 1998-08-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-01 | 2002-01-31 | 2002-08-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-01 | 2006-01-31 | 2006-08-02 | $7700.00 | Window Closed / Lapsed |