Patent US5332696A successfully refreshed from Google Patents.
US5332696A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing a silicon layer having increased surface area
Assignee: SK Hynix Inc
•
Filing: 1993-05-14
•
Granted: 1994-07-26
•
Expires: 2013-05-14
Abstract
Abstract The invention relates to a process for increasing the surface area of a silicon layer for a charge storage electrode by forming a silicon layer having a highly granulated surface and which comprises depositing an alloy layer comprising an A-material 2X and a B-material 2Y on a first insulating layer 1 which is deposited on a substrate. The depositing of the alloy layer takes place at a predetermined temperature to form a plurality of B-material 2Y precipitations on the insulating layer 1 and an A-material 2X layer on the plurality of B-material 2Y precipitations and on a plurality of first insulating layer surfaces not covered by the plurality of B-material 2Y precipitations. The resulting structure is then cooled, preferably to room temperature. The solubility of the B-material 2Y, which may be considered as the solute, is extremely limited in the A-material 2X, which may be considered as the solvent. The A-material 2X is selectively removed from the plurality of first insulating layer surfaces and from the plurality of B-material 2Y precipitations deposited on the insulating layer 1 to expose the plurality of first insulating layer surfaces and the plurality of B-material 2Y precipitations deposited on the first insulating layer to define a highly granulated surface. A silicon layer 3 for charge storage electrode is deposited on the resulting surface comprising the highly granulated surface thereby forming a highly granulated silicon surface to provide, in use, a conducting layer for charge storage electrode whereby the capacitance of the capacitor for a semiconductor device is increased per unit area.
Inventors
- 👤 Jae K. Kim
- 👤 Chul G. Ko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 23:54
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; Y; Y10; Y10S; Y10S148/00; Y10S148/014; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
205 words
A method for manufacturing a silicon layer having an increased surface area, the method comprising: depositing a first insulating layer 1 on a substrate; depositing an alloy layer 2 comprising two materials 2X,2Y on the first insulating layer 1; heating the alloy layer 2 to enable one material 2X to be melted and to enable the other material 2Y not to be melted, thereby dividing one material 2X from the other material 2Y of the alloy layer to partitively form the other material 2Y on the first insulating layer 1; removing the material 2X partitively formed from the other material 2Y of the alloy layer 2 to expose a portion of the first insulating layer 1, thereby remaining the material 2Y on the first insulating layer 1 and simultaneously providing a highly granulated surface 1X; etching the exposed portion of the first insulating layer 1 to unevenly erode the first insulating layer 1 such that a plurality of cavities 10 is formed in the first insulating layer 1; removing the remaining material 2Y deposited on the first insulating layer 1; and, depositing a silicon layer 5 on the entire surface of the resulting structure to form a granulated silicon layer having an increased surface area.
Claim 2
Independent Claim
205 words
A method for manufacturing a silicon layer having an increased surface area, the method comprising: depositing a first insulating layer 1 on a substrate; depositing an alloy layer 2 comprising two materials 2X,2Y on the first insulating layer 1; heating the alloy layer 2 to enable one material 2X to be melted and to enable the other material 2Y not to be melted, thereby dividing one material 2X from the other material 2Y of the alloy layer to partitively form the other material 2Y on the first insulating layer 1; removing the material 2X partitively formed from the other material 2Y of the alloy layer 2 to expose a portion of the first insulating layer 1, thereby remaining the material 2Y on the first insulating layer 1 and simultaneously providing a highly granulated surface 1X; etching the exposed portion of the first insulating layer 1 to unevenly erode the first insulating layer 1 such that a plurality of cavities 10 is formed in the first insulating layer 1; removing the remaining material 2Y deposited on the first insulating layer 1; and, depositing a silicon layer 5 on the entire surface of the resulting structure to form a granulated silicon layer having an increased surface area.
Claim 3
Dependent Claim
43 words
The method of claim 1, wherein the alloy layer is Al-Si binary alloy layer such that one material 2X of the alloy layer is Aluminum and the other material 2Y thereof is silicon the content rate of which is 1-30 percentages of Al-content.
Claim 4
Dependent Claim
25 words
The method of claim 1, wherein the material 2X partitively formed from the other material 2Y of the alloy layer is removed by selective etching.
Claim 5
Dependent Claim
14 words
The method of claim 1, wherein the alloy layer is Al-Cu-Si ternary alloy layer.
Claim 6
Dependent Claim
302 words
A process for increasing the surface area of a silicon layer for a charge storage electrode by forming a silicon layer having a highly granulated silicon surface, said process comprising: depositing an alloy layer 2 comprising an A-material 2X and a B-material 2Y on a first insulating layer 1 deposited on a substrate at a temperature sufficient to enable the A-material 2X to melt thereby dividing the A-material 2X from the B-material 2Y of the alloy layer 2 to partitively form the B-material 2Y on the first insulating layer 1; cooling the alloy layer 2 to a temperature sufficient to form a plurality of B-material 2Y precipitations on the first insulating layer 1 and an A-material 2X layer on the plurality of B-material 2Y precipitations and on a plurality of first insulating layer surfaces 1 not covered by the plurality of B-material 2Y precipitations; selectively removing the A-material 2X from the plurality of first insulating layer surfaces 1 and from the plurality of B-material 2Y precipitations deposited on the first insulating layer 1 to expose the plurality of portions of the first insulating layer 1 and the plurality of B-material 2Y precipitations deposited on the first insulating layer 1; forming a plurality of cavities into each of the exposed plurality of first insulating layer surfaces 1; removing the B-material 2Y from the surface of the first insulating layer 1 to define a highly granulated surface comprising the plurality of cavities formed into the first insulating layer 1; and depositing a silicon layer 6 on the entire surface of the resulting surface comprising the plurality of cavities into the first insulating layer 1 thereby forming a highly granulated silicon surface layer 6X for use as a charge storage electrode of the semiconductor device such that the capacity of the device can be improved.
Claim 7
Dependent Claim
302 words
A process for increasing the surface area of a silicon layer for a charge storage electrode by forming a silicon layer having a highly granulated silicon surface, said process comprising: depositing an alloy layer 2 comprising an A-material 2X and a B-material 2Y on a first insulating layer 1 deposited on a substrate at a temperature sufficient to enable the A-material 2X to melt thereby dividing the A-material 2X from the B-material 2Y of the alloy layer 2 to partitively form the B-material 2Y on the first insulating layer 1; cooling the alloy layer 2 to a temperature sufficient to form a plurality of B-material 2Y precipitations on the first insulating layer 1 and an A-material 2X layer on the plurality of B-material 2Y precipitations and on a plurality of first insulating layer surfaces 1 not covered by the plurality of B-material 2Y precipitations; selectively removing the A-material 2X from the plurality of first insulating layer surfaces 1 and from the plurality of B-material 2Y precipitations deposited on the first insulating layer 1 to expose the plurality of portions of the first insulating layer 1 and the plurality of B-material 2Y precipitations deposited on the first insulating layer 1; forming a plurality of cavities into each of the exposed plurality of first insulating layer surfaces 1; removing the B-material 2Y from the surface of the first insulating layer 1 to define a highly granulated surface comprising the plurality of cavities formed into the first insulating layer 1; and depositing a silicon layer 6 on the entire surface of the resulting surface comprising the plurality of cavities into the first insulating layer 1 thereby forming a highly granulated silicon surface layer 6X for use as a charge storage electrode of the semiconductor device such that the capacity of the device can be improved.
Claim 8
Dependent Claim
34 words
The process of claim 5 wherein the A-material 2X of the alloy layer is aluminum and the B-material 2Y of the alloy layer is silicon and with the Aluminum containing about 1-30 percent silicon.
Claim 9
Dependent Claim
19 words
The process of claim 5 wherein the A-material 2X is an Aluminum-Copper alloy and the B-material 2Y is silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-07-25 | 1998-01-24 | 1998-07-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-07-25 | 2002-01-24 | 2002-07-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-07-25 | 2006-01-24 | 2006-07-26 | $7700.00 | Window Closed / Lapsed |