Patent US903403A successfully refreshed from Google Patents.
Patent US5332691A successfully refreshed from Google Patents.
US5332691A
Expired / Lapsed
US
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Method of forming a contact
Assignee: Sharp Corp
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Filing: 1993-05-11
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Granted: 1994-07-26
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Expires: 2013-05-11
Abstract
Abstract A method of forming a contact is disclosed. The method of the present invention includes the steps of: forming an insulating layer on a silicon compound; forming a contact hole in the insulating layer, the contact hole reaching the silicon compound; forming at least one layer of a refractory material film on an inner wall of the contact hole and on a surface of the insulating layer; forming a silicon containing tungsten layer on the refractory material film by CVD; and growing tungsten on the silicon containing tungsten layer by CVD, to fill the contact hole with the tungsten wherein the silicon containing tungsten layer contains silicon in the range of 0.6 wt. % to 20 wt. %.
Inventors
- 👤 Takao Kinoshita
- 👤 Satoshi Saito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:02
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10W20/056; Y; Y10; Y10S; Y10S148/00; Y10S148/147
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
113 words
A method of forming a contact comprising the steps of: forming an insulating layer on an impurity doped silicon; forming a contact hole in said insulating layer, said contact hole reaching said impurity doped silicon; forming at least one layer of a refractory material film on an inner wall of said contact hole and on a surface of said insulating layer; forming a silicon containing tungsten layer on said refractory material film by CVD; and growing tungsten on said silicon containing tungsten layer by CVD, to fill said contact hole with said tungsten, and wherein said silicon containing tungsten layer contains silicon in the range of 0.6 wt. % to 20 wt. %.
Claim 2
Independent Claim
113 words
A method of forming a contact comprising the steps of: forming an insulating layer on an impurity doped silicon; forming a contact hole in said insulating layer, said contact hole reaching said impurity doped silicon; forming at least one layer of a refractory material film on an inner wall of said contact hole and on a surface of said insulating layer; forming a silicon containing tungsten layer on said refractory material film by CVD; and growing tungsten on said silicon containing tungsten layer by CVD, to fill said contact hole with said tungsten, and wherein said silicon containing tungsten layer contains silicon in the range of 0.6 wt. % to 20 wt. %.
Claim 3
Dependent Claim
67 words
A method according to claim 1, wherein said step of forming said silicon containing tungsten layer on said refractory material film is performed by using a first gas containing at least WF 6 and SiH 4 , and wherein said step of growing said tungsten on said silicon containing tungsten layer is performed by using a second gas containing at least WF 6 and H 2 .
Claim 4
Dependent Claim
52 words
A method according to claim 2, wherein in said step of forming said silicon containing tungsten layer on said refractory material film, the ratio of SiH 4 /WF 6 is at least 6, and said silicon containing tungsten layer is formed at temperatures in the range of 425° C. to 475° C.
Claim 5
Dependent Claim
44 words
A method according to claim 3, wherein said step of forming said silicon containing tungsten layer on said refractory material film and said step of growing said tungsten on said silicon containing tungsten layer are successively performed in one and the same CVD chamber.
Claim 6
Dependent Claim
40 words
A method according to claim 1, wherein said step of forming said refractory material film includes a step of forming a refractory metal film on said inner wall of said contact hole and on said surface of said insulating layer.
Claim 7
Dependent Claim
30 words
A method according to claim 5, wherein said step of forming said refractory material film further includes a step of forming a metal nitride film on said refractory material film.
Claim 8
Dependent Claim
25 words
A method according to claim 6, wherein said refractory material film is made of titanium, and said metal nitride film is a titanium nitride film.
Claim 9
Dependent Claim
23 words
A method according to claim 1, wherein a thickness of said silicon containing tungsten layer is in the range of 250Å to 500Å.
References Cited (Backward Citations)
US4851295A
Cited
US5130266A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-07-25 | 1998-01-24 | 1998-07-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-07-25 | 2002-01-24 | 2002-07-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-07-25 | 2006-01-24 | 2006-07-26 | $7700.00 | Window Closed / Lapsed |