Patent US5331658A successfully refreshed from Google Patents.
US5331658A
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Vertical cavity surface emitting laser and sensor
Assignee: Seiko Epson Corp
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Filing: 1992-08-26
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Granted: 1994-07-19
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Expires: 2012-08-26
Abstract
Abstract A vertical cavity surface emitting laser (VCSEL) having sensing capabilities is fabricated by forming a layer having the capability to change the threshold current of the VCSEL. This can be accomplished by forming a deformable membrane or a cantilevered beam on the VCSEL. The deformation of movement of the beam causes a change in the threshold current of the VCSEL, so that it can go from lasing to nonlasing or vice versa. In addition, a layer which changes reflectivity in the presence of a particular chemical can also be formed on the VCSEL to produce the same result.
Inventors
- 👤 Chan-Long Shieh
- 👤 Donald E. Ackley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 07:48
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18361; H01S5/18377; G; G01; G01D; G01D5/00; G01D5/26; H01S5/06; H01S5/0607; H01S5/0014; H01S5/0028; H01S5/02; H01S5/026; H01S5/0262; H01S5/0264; H01S5/18308; H01S5/18363; H01S5/18366; H01S5/18375; H01S5/20; H01S5/2054; H01S5/2059; H01S5/2063
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
78 words
A semiconductor laser operating at a particular wavelength and having a threshold current, comprising: a semiconductor supporting structure; a first mirror stack positioned above said supporting structure; an active layer comprised of at least one light emitting region positioned above said first mirror stack; a second mirror stack positioned above said active layer; and a means for changing said threshold current of said semiconductor laser upon sensing a change in an environment positioned above said second mirror stack.
Claim 2
Dependent Claim
78 words
A semiconductor laser operating at a particular wavelength and having a threshold current, comprising: a semiconductor supporting structure; a first mirror stack positioned above said supporting structure; an active layer comprised of at least one light emitting region positioned above said first mirror stack; a second mirror stack positioned above said active layer; and a means for changing said threshold current of said semiconductor laser upon sensing a change in an environment positioned above said second mirror stack.
Claim 3
Dependent Claim
51 words
The semiconductor laser of claim 1 wherein said means for changing said threshold current is comprised of a deformable, reflective layer positioned above said second mirror stack, wherein said deformable, reflective layer is positioned in a range of approximately 1/4 or 1/2 said wavelength of operation above said second mirror stack.
Claim 4
Dependent Claim
31 words
The semiconductor laser of claim 2 wherein said means for changing said threshold current is comprised of a reflectivity changeable layer having a thickness of approximately 1/4 said wavelength of operation.
Claim 5
Dependent Claim
22 words
The semiconductor laser of claim 2 wherein said means for changing said threshold current is comprised of a silicon/silicon dioxide mirror stack.
Claim 6
Dependent Claim
40 words
The semiconductor laser of claim 1 wherein said means for changing said threshold current forms an air bridge having an air gap in a range of approximately 1/4 or 1/2 wave between said second mirror stack and said first layer.
Claim 7
Dependent Claim
35 words
The semiconductor laser of claim 1 wherein said means for changing said threshold current is comprised of a displaceable beam positioned in a range of approximately 1/4 or 1/2 wave above said second mirror stack.
Claim 8
Dependent Claim
42 words
The semiconductor laser of claim 1 wherein said means for changing said threshold current is comprised of an anti-reflective, 1/4 wave thick layer formed on said second mirror stack which has a capability to change reflectivity in a presence of a chemical.
Claim 9
Dependent Claim
15 words
The semiconductor laser of claim 1 further comprising a photodiode positioned within said semiconductor laser.
Claim 10
Dependent Claim
15 words
The semiconductor laser of claim 1 further comprising a phototransistor positioned within said semiconductor laser.
Claim 11
Dependent Claim
81 words
A semiconductor laser, operating at a particular wavelength and having a threshold current, comprising: a semiconductor supporting structure; a first mirror stack positioned above said supporting structure; an active layer comprised of at least one light emitting region positioned above said first mirror stack; a second mirror stack positioned above said active layer; and a first layer positioned above said second mirror stack which is capable of changing said threshold current of said semiconductor laser upon a change in an environment.
Claim 12
Dependent Claim
81 words
A semiconductor laser, operating at a particular wavelength and having a threshold current, comprising: a semiconductor supporting structure; a first mirror stack positioned above said supporting structure; an active layer comprised of at least one light emitting region positioned above said first mirror stack; a second mirror stack positioned above said active layer; and a first layer positioned above said second mirror stack which is capable of changing said threshold current of said semiconductor laser upon a change in an environment.
Claim 13
Dependent Claim
47 words
The semiconductor laser of claim 10 wherein said first layer is comprised of a deformable, reflective layer positioned above said second mirror stack, wherein said deformable, reflective layer is positioned in a range of approximately 1/4 or 1/2 said wavelength of operation above said second mirror stack.
Claim 14
Dependent Claim
27 words
The semiconductor laser of claim 10 wherein said first layer is comprised of a reflectivity changeable layer having a thickness of approximately 1/4 said wavelength of operation.
Claim 15
Dependent Claim
18 words
The semiconductor laser of claim 11 wherein said first layer is comprised of a silicon/silicon dioxide mirror stack.
Claim 16
Dependent Claim
36 words
The semiconductor laser of claim 10 wherein said first layer forms an air bridge having an air gap in a range of approximately 1/4 or 1/2 wave between said second mirror stack and said first layer.
Claim 17
Dependent Claim
31 words
The semiconductor laser of claim 10 wherein said first layer is comprised of a displaceable beam positioned in a range of approximately 1/4 or 1/2 wave above said second mirror stack.
Claim 18
Dependent Claim
38 words
The semiconductor laser of claim 10 wherein said first layer is comprised of an anti-reflective, 1/4 wave thick layer formed on said second mirror stack which has a capability to change reflectivity in a presence of a chemical.
Claim 19
Dependent Claim
15 words
The semiconductor laser of claim 10 further comprising a photodiode positioned within said semiconductor laser.
Claim 20
Dependent Claim
15 words
The semiconductor laser of claim 10 further comprising a phototransistor positioned within said semiconductor laser.
Claim 21
Independent Claim
90 words
A method of fabricating a semiconductor laser, operating at a particular wavelength and having a threshold current, comprising the steps of: providing a semiconductor supporting structure; forming a first mirror stack positioned above said supporting structure; forming an active layer comprised of at least one light emitting region positioned above said first mirror stack; forming a second mirror stack positioned above said active layer; and forming a means for changing said threshold current of said semiconductor laser upon sensing a change in an environment positioned above said second mirror stack.
Claim 22
Independent Claim
90 words
A method of fabricating a semiconductor laser, operating at a particular wavelength and having a threshold current, comprising the steps of: providing a semiconductor supporting structure; forming a first mirror stack positioned above said supporting structure; forming an active layer comprised of at least one light emitting region positioned above said first mirror stack; forming a second mirror stack positioned above said active layer; and forming a means for changing said threshold current of said semiconductor laser upon sensing a change in an environment positioned above said second mirror stack.
Claim 23
Dependent Claim
48 words
The method of claim 19 wherein means for changing said threshold current comprises forming a deformable, reflective layer positioned above said second mirror stack, wherein said deformable, reflective layer is positioned in a range of approximately 1/4 or 1/2 said wavelength of operation above said second mirror stack.
Claim 24
Dependent Claim
19 words
The method of claim 19 wherein forming said means for changing said threshold current comprises forming a reflective metal.
Claim 25
Dependent Claim
21 words
The method of claim 19 wherein forming said means for changing said threshold current comprises forming a silicon/silicon dioxide mirror stack.
Claim 26
Dependent Claim
41 words
The method of claim 19 wherein forming said means for changing said threshold current comprises forming an air bridge having an air gap in a range of approximately 1/4 or 1/2 wave between said second mirror stack and said first layer.
Claim 27
Dependent Claim
34 words
The method of claim 19 wherein forming said means for changing said threshold current comprises forming a displaceable beam positioned in a range of approximately 1/4 or 1/2 wave above said second mirror stack.
Claim 28
Dependent Claim
41 words
The method of claim 19 wherein forming said means for changing said threshold current comprises forming an anti-reflective, 1/4 wave thick layer formed on said second mirror stack which has a capability to change reflectivity in a presence of a chemical.
Claim 29
Dependent Claim
15 words
The method of claim 19 further comprising forming a photodiode positioned within said semiconductor laser.
Claim 30
Dependent Claim
15 words
The method of claim 19 further comprising forming a phototransistor positioned within said semiconductor laser.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-07-18 | 1998-01-17 | 1998-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-07-18 | 2002-01-17 | 2002-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-07-18 | 2006-01-17 | 2006-07-19 | $7700.00 | Window Closed / Lapsed |