Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
48 words
A test reticle for use in alignment of integrated circuit process layers, said test reticle comprising: a plurality of alignment mark groups, each of said groups including a particular type of alignment mark in one or more predetermined sizes; and registration means incorporating one or more registration structures.
Claim 2
Dependent Claim
48 words
A test reticle for use in alignment of integrated circuit process layers, said test reticle comprising: a plurality of alignment mark groups, each of said groups including a particular type of alignment mark in one or more predetermined sizes; and registration means incorporating one or more registration structures.
Claim 3
Dependent Claim
26 words
The test reticle of claim 1 wherein said alignment mark groups further include one or more pairs of orthogonally arranged alignment marks in said predetermined sizes.
Claim 4
Dependent Claim
29 words
The test reticle of claim 1 wherein said registration means comprises one or more metrology cells, each of said metrology cells incorporating one or more of said registration structures.
Claim 5
Dependent Claim
17 words
The test reticle of claim 1 wherein one of said alignment mark groups comprises LSA alignment marks.
Claim 6
Dependent Claim
17 words
The test reticle of claim 1 wherein one of said alignment mark groups comprises FIA alignment marks.
Claim 7
Dependent Claim
17 words
The test reticle of claim 1 wherein one of said alignment mark groups comprises LIA alignment marks.
Claim 8
Dependent Claim
17 words
The test reticle of claim 1 wherein one of said alignment mark groups comprises GAM alignment marks.
Claim 9
Dependent Claim
17 words
The test reticle of claim 1 wherein one of said alignment mark groups comprises GAMLSA alignment marks.
Claim 10
Dependent Claim
19 words
The test reticle of claim 1 wherein one of said alignment mark groups comprises Canon 6 Bar alignment marks.
Claim 11
Dependent Claim
16 words
The test reticle of claim 1 wherein one of said registration structures comprises visual vernier registration.
Claim 12
Dependent Claim
15 words
The test reticle of claim 1 wherein one of said registration structures comprises box-in-box registration.
Claim 13
Dependent Claim
16 words
The test reticle of claim 1 wherein one of said registration structures comprises LSA AMS registration.
Claim 14
Dependent Claim
16 words
The test reticle of claim 1 wherein one of said registration structures comprises FIA AMS registration.
Claim 15
Dependent Claim
15 words
The test reticle of claim 1 wherein one of said registration structures comprises CANOMAP registration.
Claim 16
Dependent Claim
16 words
The test reticle of claim 1 wherein one of said registration structures comprises XY 2I registration.
Claim 17
Independent Claim
167 words
A method of using a test reticle to align integrated circuit process layers, said method comprising the steps of: generating a test reticle having a pattern including a plurality of alignment mark groups, each of said groups including a particular type of alignment mark in one or more predetermined sizes, and one or more registration structures; determining an initial expected range of said predetermined alignment mark sizes suitable for a particular application; applying said pattern of said test reticle to a process layer of one or more test wafers; processing said test wafers having said pattern of said test reticle thereon through one or more additional processing steps; measuring alignment signals produced by scanning alignment marks having a size in said initial expected range; quantifying said alignment signals using a measure of alignment signal quality; and fitting said quantified alignment signals to a statistical model in order to determine one or more optimized alignment mark sizes which result in an acceptable level of said alignment signal quality.
Claim 18
Independent Claim
167 words
A method of using a test reticle to align integrated circuit process layers, said method comprising the steps of: generating a test reticle having a pattern including a plurality of alignment mark groups, each of said groups including a particular type of alignment mark in one or more predetermined sizes, and one or more registration structures; determining an initial expected range of said predetermined alignment mark sizes suitable for a particular application; applying said pattern of said test reticle to a process layer of one or more test wafers; processing said test wafers having said pattern of said test reticle thereon through one or more additional processing steps; measuring alignment signals produced by scanning alignment marks having a size in said initial expected range; quantifying said alignment signals using a measure of alignment signal quality; and fitting said quantified alignment signals to a statistical model in order to determine one or more optimized alignment mark sizes which result in an acceptable level of said alignment signal quality.
Claim 19
Dependent Claim
34 words
The method of claim 16 wherein said method further includes the step of verifying said alignment signal quality by applying said optimized alignment mark size to said test wafers and performing a registration thereon.
Claim 20
Dependent Claim
41 words
The method of claim 16 wherein said method includes the additional steps of: applying said optimized alignment mark size to one or more product wafers; and confirming said optimized alignment mark size on said product wafers by performing a registration thereon.
Claim 21
Dependent Claim
34 words
The method of claim 16 wherein said step of measuring alignment signals from said predetermined alignment mark sizes is performed using a waferstepper apparatus which scans said alignment mark to produce said alignment signals.
Claim 22
Dependent Claim
31 words
The method of claim 16 wherein said step of fitting said measured alignment signals to a model includes generating a best fit of said measured signals to a third order polynomial.
Claim 23
Dependent Claim
42 words
The method of claim 16 wherein said step of fitting said measured alignment signals to a model includes generating a contour map in accordance with said statistical model such that said optimal alignment signal sizes define an area of said contour map.
Claim 24
Independent Claim
132 words
A method of using a reticle to align integrated circuit process layers, said method comprising the steps of: generating a test reticle having a pattern including a plurality of alignment mark groups, each of said groups including a particular type of alignment mark in one or more predetermined sizes, and one or more registration structures; applying said pattern of said test reticle to a process layer of one or more test wafers; processing said test wafers having said pattern of said test reticle thereon through one or more additional processing steps; determining from said test wafers one or more optimized alignment mark sizes which result in an acceptable level of alignment signal quality; and applying at least one alignment mark of said optimized alignment mark size to one or more product wafers.
Claim 25
Independent Claim
132 words
A method of using a reticle to align integrated circuit process layers, said method comprising the steps of: generating a test reticle having a pattern including a plurality of alignment mark groups, each of said groups including a particular type of alignment mark in one or more predetermined sizes, and one or more registration structures; applying said pattern of said test reticle to a process layer of one or more test wafers; processing said test wafers having said pattern of said test reticle thereon through one or more additional processing steps; determining from said test wafers one or more optimized alignment mark sizes which result in an acceptable level of alignment signal quality; and applying at least one alignment mark of said optimized alignment mark size to one or more product wafers.