US5328859A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making high voltage PNP bipolar transistor in CMOS
Assignee: Xerox Corp
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Filing: 1993-01-04
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Granted: 1994-07-12
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Expires: 2013-01-04
Abstract
Abstract A high voltage bipolar transistor fabricated on a CMOS substrate without adding any additional process steps. During the CMOS n-well mask and implant steps an n-well is formed for the transistor. Next, during the CMOS field and deep boron implant steps a circular p-field is formed within the n-well. Finally, during the CMOS p+ mask and implant steps the p+ emitter is formed. The presence of the p-field between the emitter and n+ base provides high voltage protection.
Inventors
- 👤 Tuan A. Vo
- 👤 Mohamad M. Mojaradi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 07:08
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/133; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/02; H10D84/03; H10D84/038; Y; Y10; Y10S; Y10S148/00; Y10S148/011
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
221 words
The method of forming a high voltage bipolar transistor comprising an n-well, a p+ emitter and an n+ base at the surface of a p-type silicon substrate and located within said well, and a p-field at the surface of said substrate circularly surrounding said emitter and separating said emitter from said base, comprising the steps of: growing an oxide layer on the surface of said substrate, depositing a nitride layer on said oxide layer, using a first mask to etch away the nitride, to expose said oxide layer, except for two areas to form emitter and base nitride areas where the nitride remains, second masking to form an n-well exposed area overlapping and slightly larger than said emitter and base nitride areas, first implanting an n-well below said n-well area, third masking all of the surface of said substrate except for the area between said two nitride areas, second implanting in said area between said two nitride areas to form a p-field drift region to increase the breakdown voltage of the base to emitter junction, removing all of said nitride, fourth masking off all areas of said transistor except for said emitter area, third implanting to form a p+ emitter, fifth masking off all areas of said transistor except for said base area, and fourth implanting to form an n+ base.
Claim 2
Independent Claim
221 words
The method of forming a high voltage bipolar transistor comprising an n-well, a p+ emitter and an n+ base at the surface of a p-type silicon substrate and located within said well, and a p-field at the surface of said substrate circularly surrounding said emitter and separating said emitter from said base, comprising the steps of: growing an oxide layer on the surface of said substrate, depositing a nitride layer on said oxide layer, using a first mask to etch away the nitride, to expose said oxide layer, except for two areas to form emitter and base nitride areas where the nitride remains, second masking to form an n-well exposed area overlapping and slightly larger than said emitter and base nitride areas, first implanting an n-well below said n-well area, third masking all of the surface of said substrate except for the area between said two nitride areas, second implanting in said area between said two nitride areas to form a p-field drift region to increase the breakdown voltage of the base to emitter junction, removing all of said nitride, fourth masking off all areas of said transistor except for said emitter area, third implanting to form a p+ emitter, fifth masking off all areas of said transistor except for said base area, and fourth implanting to form an n+ base.
Claim 3
Independent Claim
222 words
The method of forming a high voltage bipolar transistor comprising a p- well, an n+ emitter and a p+ base at the surface of an n-type silicon substrate and located within said well, and an n-field at the surface of said substrate circularly surrounding said emitter and separating said emitter from said base, comprising the steps of: growing an oxide layer on the surface of said substrate, depositing a nitride layer on said oxide layer, using a first mask to etch away the nitride, to expose said oxide layer, except for two areas to form emitter and base nitride areas where the nitride remains, second masking to form a p-well exposed area overlapping and slightly larger than said emitter and base nitride areas, first implanting a p-well below said p-well area, third masking all of the surface of said substrate except for the area between said two nitride areas, second implanting in said area between said two nitride areas to form an n-field drift region to increase the breakdown voltage of the base to emitter junction, removing all of said nitride, fourth masking off all areas of said transistor except for said emitter area, third implanting to form an n+ emitter, fifth masking off all areas of said transistor except for said base area, and fourth implanting to form a p+ base.
Claim 4
Independent Claim
222 words
The method of forming a high voltage bipolar transistor comprising a p- well, an n+ emitter and a p+ base at the surface of an n-type silicon substrate and located within said well, and an n-field at the surface of said substrate circularly surrounding said emitter and separating said emitter from said base, comprising the steps of: growing an oxide layer on the surface of said substrate, depositing a nitride layer on said oxide layer, using a first mask to etch away the nitride, to expose said oxide layer, except for two areas to form emitter and base nitride areas where the nitride remains, second masking to form a p-well exposed area overlapping and slightly larger than said emitter and base nitride areas, first implanting a p-well below said p-well area, third masking all of the surface of said substrate except for the area between said two nitride areas, second implanting in said area between said two nitride areas to form an n-field drift region to increase the breakdown voltage of the base to emitter junction, removing all of said nitride, fourth masking off all areas of said transistor except for said emitter area, third implanting to form an n+ emitter, fifth masking off all areas of said transistor except for said base area, and fourth implanting to form a p+ base.
References Cited (Backward Citations)
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