Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To avoid a double-resist process abundant in problems such as unevenness in application, etc., contained in the conventional filed oxidation process of a memory process. CONSTITUTION:By stacking a silicon oxide film 8 on the surface of a silicon nitride film 4 in advance, for the screening of the implanted ions in a P-type active region, the silicon oxide film can be substituted for resist, and the necessity of double coating of resist is eliminated. The adhesion between the resist and the base improves, and the redosing process of the resist application by the slippage in mask lamination, etc., can be simplified.

Inventors

• 👤 Masahiko Takeuchi
• 👤 雅彦 竹内
• 👤 Kaoru Motonami
• 👤 薫 本並
• 👤 Yoshiki Okumura
• 👤 奥村　喜紀

Bibliographic Details