Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
148 words
A method of manufacturing electronic devices having internal windows in an insulating, ion implanted region, the device including a semiconductor structure and a top and a bottom metal electrode to the structure, which comprises: depositing on the top surface of the top electrode a photoresist layer in a thickness sufficient to prevent implantation ions from reaching semiconductor material underlying the top electrode, patterning the photoresist layer, and implanting proton ions into said semiconductor material, forming an insulating region with a centrally located window, wherein said photoresist layer is patterned by angle etching with reactive ion etching (RIE) to produce a masking pattern side walls of which are inclined a preselected angle with respect to a normal to said top surface and which are parallel each to another, and said implanting of the ions is conducted at an angle directed parallel to the side walls of the photoresist pattern.
Claim 2
Independent Claim
148 words
A method of manufacturing electronic devices having internal windows in an insulating, ion implanted region, the device including a semiconductor structure and a top and a bottom metal electrode to the structure, which comprises: depositing on the top surface of the top electrode a photoresist layer in a thickness sufficient to prevent implantation ions from reaching semiconductor material underlying the top electrode, patterning the photoresist layer, and implanting proton ions into said semiconductor material, forming an insulating region with a centrally located window, wherein said photoresist layer is patterned by angle etching with reactive ion etching (RIE) to produce a masking pattern side walls of which are inclined a preselected angle with respect to a normal to said top surface and which are parallel each to another, and said implanting of the ions is conducted at an angle directed parallel to the side walls of the photoresist pattern.
Claim 3
Dependent Claim
46 words
The method of claim 1, in which said photoresist layer is patterned in the form of dots of photoresist, having side walls parallel each to another and sloping said angle relative to a plane normal to the plane of the top surface of the top electrode.
Claim 4
Dependent Claim
87 words
The method of claim 1, in which said photoresist mask is produced by depositing a thick photoresist layer on top of the metal electrode, depositing a spin-on-glass layer on top of the photoresist layer, depositing a thin photoresist layer on top of the spin-on-glass layer, patterning the thin photoresist layer by conventional lithography into a desired pattern, and transferring said pattern to the spin-on-glass layer by etching in a CF 4 /O 2 plasma and then to the thick photoresist layer by Oxygen Reactive Ion Etching (RIE).
Claim 5
Dependent Claim
49 words
The method of claim 2, in which, prior to said RIE step, the top surface of the device is arranged at an angle relative to a normal to parallel plates of a RIE oxygen system, said angle corresponding with an angle of implantation at a subsequent ion implantation step.
Claim 6
Dependent Claim
27 words
The method of claim 1, in which said angle is within a range of from 5 to 10 degrees relative to the normal to said top surface.
Claim 7
Dependent Claim
12 words
The method of claim 5, in which said angle is 7 degrees.
Claim 8
Dependent Claim
59 words
The method of claim 3, in which said metal electrode has an aperture for the passage of radiation emission therethrough, and in which, prior to the deposition of the thick photoresist layer, an SiO 2 layer approximately λ/2 thick is deposited on top of the metal electrode and on a surface of the semiconductor structure exposed in the aperture.
Claim 9
Dependent Claim
18 words
The method of claim 7, in which said exposed surface is a surface of a semiconductor contact layer.
Claim 10
Dependent Claim
26 words
The method of claim 1, in which said device is selected from vertical cavity surface emitting lasers (VCSELs) and from resonant cavity light emitting diodes (RCLEDs).
Claim 11
Dependent Claim
51 words
The method of claim 1, in which said device is a VCSEL, the semiconductor structure of which includes multi-quantum wells, active top and bottom confining layers, and DBR top and bottom mirrors, and said insulating region is formed by said implantation of ions into peripheral areas of the top DBR mirror.
Claim 12
Dependent Claim
21 words
The method of claim 10, in which a plurality of these VCSELs is arranged into an array of individually addressable VCSELs.