US5328853A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a photodetector array having high pixel density
Assignee: United States Department of the Navy
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Filing: 1993-06-18
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Granted: 1994-07-12
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Expires: 2013-06-18
Abstract
Abstract Photoconductive semiconductor material is injected into narrow and closelypaced cylindrical channels in an insulating matrix plate to form pixel elements of a high resolution photodetector array. A transparent conductive layer is deposited on one surface of the photoconductor array while light reflecting pads are formed on the elements at the opposite surface. Subsequently, a layer of light modulating material and a transparent conductive layer are deposited on the opposite surface to obtain a high resolution spatial light modulator.
Inventors
- 👤 Carmen I. Huber
- 👤 Tito E. Huber
- 👤 Tak-Kin Chu
- 👤 Nicholas Caviris
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:56
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/135; G02F1/1354; H; H10; H10F; H10F39/00; H10F39/10; H10F77/00; H10F77/10; H10F77/12; H10F77/121; H10F77/40; H10F77/413; G02F1/1352; Y; Y10; Y10S; Y10S148/00; Y10S148/05; Y10S148/107
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
114 words
A method of making a photodetector device which includes an electrically insulating matrix having a plurality of pins made of a photoconducting semiconductor embedded in channels formed in the matrix to provide a pixel density substantially exceeding 1,000,000 per square centimeter, comprising the steps of: heating the photoconducting semiconductor to a molten state; injecting said photoconducting semiconductor in the molten state into the channels of the matrix; cooling the matrix to solidify the injected photoconducting semiconductor into the pins; chemically etching the pins at an interface surface of the matrix to form spaces in the channels between the pins and said interface surface; and filling said spaces in the channels with light reflecting material.
Claim 2
Independent Claim
114 words
A method of making a photodetector device which includes an electrically insulating matrix having a plurality of pins made of a photoconducting semiconductor embedded in channels formed in the matrix to provide a pixel density substantially exceeding 1,000,000 per square centimeter, comprising the steps of: heating the photoconducting semiconductor to a molten state; injecting said photoconducting semiconductor in the molten state into the channels of the matrix; cooling the matrix to solidify the injected photoconducting semiconductor into the pins; chemically etching the pins at an interface surface of the matrix to form spaces in the channels between the pins and said interface surface; and filling said spaces in the channels with light reflecting material.
Claim 3
Dependent Claim
75 words
The method as defined in claim 1 wherein said step of filling the spaces comprises: depositing a layer of the reflecting material over the interface surface of the matrix causing the reflecting material to enter into said spaces in the channels; and polishing the interface surface to remove an excess of the reflecting material deposited thereon leaving the spaces in the channels filled with the reflecting material as reflecting pads in contact with the pins.
References Cited (Backward Citations)
US2597000A
Cited
US2450020A
Cited
US2446237A
Cited
US3773567A
Cited
US4049505A
Cited
US4232440A
Cited
US5156980A
Cited
US5298432A
Cited
US5011793A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-07-11 | 1998-01-10 | 1998-07-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-07-11 | 2002-01-10 | 2002-07-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-07-11 | 2006-01-10 | 2006-07-12 | $7700.00 | Window Closed / Lapsed |