US3773567A
Expired / Lapsed
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Diffused heterojunction multilayer coatings for electrostatic photography
Assignee: SECRETARY DEPARTMENT OF SUPPLY AU
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Filing: 1969-12-30
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Granted: 1973-11-20
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Expires: 1989-12-30
Abstract
Abstract A method of coating surfaces for electrostatic photography which consists in successively depositing dissimilar materials on to a surface under conditions such that partial diffusion of one material into the adjacent material occurs at the interface between the dissimilar materials to an extent such that zones of p-type and n-type semiconductors are produced in the diffused region which act together as rectifying junctions to allow control of holes and electrons produced by photons which enter such an area, the first layer preferably being a conductor or semiconductor and the second layer being a photoconductor or an insulator with some injected charge mobility.
Inventors
- 👤 F Gillespie
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:13
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/043; G03G5/0433; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/063
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
64 words
The method of claim 1 wherein a polycrystalline or amorphous base is used which forms the first material, over which is deposited the second polycrystalline or amorphous material under conditions which cause partial diffusion to occur to a depth of about 100 nanometers at the coating-support interface in order to produce by chemical combination zones of p-type and n-type semiconductors in the diffused region.
Claim 2
Dependent Claim
55 words
The method of claim 1 wherein a base has successively deposited on it two polycrystalline or amorphous materials under conditions which cause partial diffusion of one material into the other to a depth of about 100 nanometers at the interface in order to produce by chemical combination the required zone of p-type and n-type semiconductors.
Claim 3
Dependent Claim
28 words
The method of claim 1 wherein a first material is a polycrystalline or amorphous conductor or semiconductor and a second adjoining material is a polycrystalline or amorphous photoconductor.
Claim 4
Dependent Claim
33 words
The method of claim 1 wherein a first material is a polycrystalline or amorphous conductor or semiconductor and a second adjacent material is an polycrystalline or amorphous insulator with some injected charge mobility.
Claim 5
Dependent Claim
55 words
The method of claim 1 wherein a base has successively deposited on it more than two polycrystalline or amorphous materials under conditions which cause partial diffusion of each material into the others to a depth of about 100 nanometers at the interfaces to produce by chemical combination the required zones of p-type and n-type semiconductors.
Claim 6
Dependent Claim
86 words
The method of claim 1 wherein the first deposited material is selected from antimony, arsenic, gold, copper, cadmium, bismuth, germanium, silicon, the carbides, nitrides and borides of uranium, tungsten and tantalum, the oxides, sulfides, selenides, tellurides, and iodides of thallium, antimony, bismuth cadmium, lead, mercury and copper, the arsenides and antimonides of copper, gallium and indium, and the second deposited material is selected from carbon, selenium, the sulfides, selenides and sulfo-selenides of antimony, arsenic and cadmium, the oxides of aluminum, nickel, titanium, tin, silicon and zinc.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-11-19 | 1977-05-21 | 1977-11-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-11-19 | 1981-05-21 | 1981-11-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-11-19 | 1985-05-21 | 1985-11-20 | $7700.00 | Window Closed / Lapsed |