Ion implanter with plural surface potential sensors

Claim 2

An ion implanter comprising: means for irradiating an ion beam; a rotary disc having a front surface with a number of substrates fixed and equally spaced circumferentially thereon, said rotary disc being supported for rotation and reciprocation so that said substrates are exposed in succession to the ion beam; a plurality of surface potential sensors positioned adjacent said front surface of said rotary disc, said surface potential sensors being respectively positioned at different angular distances with respect to the ion beam for generating a plurality of respective surface potential signals in response to surface potentials at said different angular distances on said respective substrates; and means responsive to the respective surface potential signals for estimating a surface potential produced on each of said substrates when said each substrate is exposed to the ion beam.

Claim 3

The ion implanter as claimed in claim 1, further including means responsive to the surface potential signals from said respective surface potential sensors for displaying the surface potentials on said substrates passing said respective potential sensors.

Claim 4

The ion implanter as claimed in claim 1, further including means responsive to the respective surface potential signals for controlling charges induced on the respective substrates.

Claim 5

An ion implanter comprising: means for irradiating an ion beam; a rotary disc having a front surface with a number of substrates fixed and equally spaced circumferentially thereof, said rotary drum being supported for rotation and reciprocation so that said substrates are exposed in succession to the ion beam; a plurality of surface potential sensors positioned adjacent said front surface of said rotary disc, said surface potential sensors being respectively positioned at different positions on a line extending in a direction of reciprocation of said rotary disc for producing a plurality of respective surface potential signals in response to surface potentials at said different positions on each of said substrates; and means responsive to the respective surface potential signals for estimating a surface potential produced on each of said substrates at a time at which and at a position where each substrate is exposed to the ion beam.

Claim 6

An ion implanter comprising: means for irradiating an ion beam; a rotary disc having a front surface with a number of substrates fixed and equally spaced circumferentially thereof, said rotary drum being supported for rotation and reciprocation so that said substrates are exposed in succession to the ion beam; a plurality of surface potential sensors positioned adjacent said front surface of said rotary disc, said surface potential sensors being respectively positioned at different positions on a line extending in a direction of reciprocation of said rotary disc for producing a plurality of respective surface potential signals in response to surface potentials at said different positions on each of said substrates; and means responsive to the respective surface potential signals for estimating a surface potential produced on each of said substrates at a time at which and at a position where each substrate is exposed to the ion beam.

Claim 7

The ion implanter as claimed in claim 4, further including means responsive to the surface potential signals from said surface potential sensors for respectively displaying the surface potentials at said respective different positions on said each substrate passing said surface potential sensors.

Claim 8

The ion implanter as claimed in claim 4, further including means responsive to the respective surface potential signals for controlling charges induced on the respective substrates.

Claim 9

An ion implanter, comprising: a rotary disc supported for rotation about an axis and reciprocation along a line and having a surface having a plurality of substrates fixed on said surface of said rotary disc at spaced intervals so that said substrates are positioned to be successively irradiated with an ion beam; means for selectively rotating and reciprocating said rotary disc; means for irradiating an ion beam to produce an ion beam spot at a predetermined position at said surface of said rotary disc so that said plurality of substrates are each irradiated with said ion beam at an irradiation target location; a plurality of surface potential sensors respectively positioned adjacent said surface of said rotary disc at predetermined locations relative to said irradiation target location to measure surface potential at a surface of each of said plurality of substrates after irradiation, each of said plurality of surface potential sensors respectively producing a surface potential signal representative of said surface potential on said substrate at said location of said surface potential sensor; and means responsive to the respective surface potential signals for estimating a surface potential produced on each of said angularly-spaced substrates when said each substrate is exposed to the ion beam.

Claim 10

An ion implanter, comprising: a rotary disc supported for rotation about an axis and reciprocation along a line and having a surface having a plurality of substrates fixed on said surface of said rotary disc at spaced intervals so that said substrates are positioned to be successively irradiated with an ion beam; means for selectively rotating and reciprocating said rotary disc; means for irradiating an ion beam to produce an ion beam spot at a predetermined position at said surface of said rotary disc so that said plurality of substrates are each irradiated with said ion beam at an irradiation target location; a plurality of surface potential sensors respectively positioned adjacent said surface of said rotary disc at predetermined locations relative to said irradiation target location to measure surface potential at a surface of each of said plurality of substrates after irradiation, each of said plurality of surface potential sensors respectively producing a surface potential signal representative of said surface potential on said substrate at said location of said surface potential sensor; and means responsive to the respective surface potential signals for estimating a surface potential produced on each of said angularly-spaced substrates when said each substrate is exposed to the ion beam.

Claim 11

The ion implanter as set forth in claim 7 wherein said predetermined locations at which said plurality of said surface potential sensors are located are angular spaced at predetermined angular distances relative to said irradiation target location and said substrates are fixed at said predetermined angular distances.

Claim 12

The ion implanter as set forth in claim 8 wherein said predetermined angular distances are equal.

Claim 13

The ion implanter as claimed in claim 8, further including means responsive to the surface potential signals from said angularly-spaced respective surface potential sensors for displaying the surface potentials on said substrates passing said respective angularly-spaced potential sensors.

Claim 14

The ion implanter as claimed in claim 8, further including means responsive to the respective surface potential signals for controlling charges induced on the respective angularly-spaced substrates.

Claim 15

The ion implanter as set forth in claim 7 wherein said predetermined locations at which said plurality of said surface potential sensors are located are linearly-spaced at predetermined linear distances relative to said irradiation target location and said substrates are fixed at predetermined angular distances.

Claim 16

The ion implanter as set forth in claim 12 wherein said predetermined angular distances are equal.

Claim 17

The ion implanter as claimed in claim 12, further including means responsive to the surface potential signals from said linearly-spaced respective surface potential sensors for displaying the surface potentials on said substrates passing said respective angularly-spaced potential sensors.

Claim 18

The ion implanter as claimed in claim 12, further including means responsive to the respective surface potential signals for controlling charges induced on the respective angularly-spaced substrates. h