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US5326727A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for integrated circuit fabrication including linewidth control during etching

Assignee: Nokia Bell Labs
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Filing: 1992-12-30
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Granted: 1994-07-05
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Expires: 2012-12-30
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Abstract

Abstract Pattern transfer from a resist to an underlying layer is accomplished by etching the underlying layer in a plasma comprising hydrogen bromide and oxygen. Accuracy of pattern transfer is obtained by using first and second materials underneath the resist. The first and second materials may be, e.g., polysilicon and a photoresist. Etching of the resist is performed under conditions designed to minimize changes in the horizontal dimensions.

Inventors

  • 👤 Taeho Kook
  • 👤 Avinoam Kornblit
  • 👤 Kolawole R. Olasupo

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 21:34
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; H10P50/71

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 124 words
A method of integrated circuit fabrication comprising the steps of: forming a layer of first material on a substrate; covering said layer of first material with a layer of second material of photoresist, said second layer being a planarizing layer; covering said layer of second material with a resist, said second material reducing reflections of radiation used in the selective exposure of said resist; selectively exposing portions of said resist to radiation; etching said planarizing layer in a plasma comprising oxygen and at least one member selected from the group consisting of halogens and halogen hydrides, said at least one member and said oxygen having concentrations selected to minimize changes in the dimensions of the resist during etching which exposes portions of said material.
Claim 2
Independent Claim 124 words
A method of integrated circuit fabrication comprising the steps of: forming a layer of first material on a substrate; covering said layer of first material with a layer of second material of photoresist, said second layer being a planarizing layer; covering said layer of second material with a resist, said second material reducing reflections of radiation used in the selective exposure of said resist; selectively exposing portions of said resist to radiation; etching said planarizing layer in a plasma comprising oxygen and at least one member selected from the group consisting of halogens and halogen hydrides, said at least one member and said oxygen having concentrations selected to minimize changes in the dimensions of the resist during etching which exposes portions of said material.
Claim 3
Dependent Claim 16 words
A method as recited in claim 1 in which said plasma further comprises an inert constituent.
Claim 4
Dependent Claim 14 words
A method as recited in claim 2 in which said inert constituent comprises helium.
Claim 5
Dependent Claim 14 words
A method as recited in claim 1 in which said first material comprises polysilicon.
Claim 6
Dependent Claim 15 words
A method as recited in claim 4 comprising the further step of etching said polysilicon.
Claim 7
Dependent Claim 23 words
A method as recited in claim 1 in which said at least one member is selected from the group consisting of hydrogen halides.
Claim 8
Dependent Claim 15 words
A method as recited in claim 6 in which said halogen hydride is hydrogen bromide.
Claim 9
Dependent Claim 21 words
A method as recited in claim 7 in which the concentration of said hydrogen bromide to said oxygen is approximately 1:1.
Claim 10
Dependent Claim 20 words
A method as recited in claim 8 in which said plasma has a pressure of approximately 25 mTorr or less.

References Cited (Backward Citations)

US4244799A Cited
US4521274A Cited
US4615782A Cited
US4657629A Cited
US4770739A Cited
US4812200A Cited
US5126231A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-07-04 1998-01-03 1998-07-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-07-04 2002-01-03 2002-07-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-07-04 2006-01-03 2006-07-05 $7700.00 Window Closed / Lapsed

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