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Buried-type semiconductor laser device

Assignee: Furukawa Electric Co Ltd
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Filing: 1992-12-17
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Granted: 1994-06-28
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Expires: 2012-12-17
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Abstract

Abstract This invention provides a buried-type semiconductor laser device that operates stably and reliably at a high temperature for a prolonged period of time. A buried-type semiconductor laser device according to the invention comprises a semiconductor substrate 2, a first ridge mesa 8 formed on said substrate 2, said first ridge mesa 8 being covered on the top with at least an active layer 4 and provided at both lateral edges with current blocking layers 9, 10 of p-n reverse junction semiconductors arranged along the active layer for confining electric currents, and a second ridge mesa 11 formed by said first ridge mesa 8 and said current blocking layers 9, 10 and provided at both lateral edges with a semi-insulating layer 13.

Inventors

  • 👤 Akihiko Kasukawa
  • 👤 Toshio Kikuta

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 23:16
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/2275; H01S5/30; H01S5/32; H01S5/323; H01S5/3235; H01S5/32391

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 82 words
In a buried-type semiconductor laser device comprising a semiconductor substrate, a first ridge mesa formed on said substrate, said first ridge mesa being covered on top with an active layer and provided at both lateral edges with current blocking layers of p-n reverse junction semiconductors arranged along the active layer for confining injection currents, and a second ridge mesa formed at least by said first ridge mesa and said current blocking layers and provided at both lateral edges with a semi-insulating layer.
Claim 2
Dependent Claim 82 words
In a buried-type semiconductor laser device comprising a semiconductor substrate, a first ridge mesa formed on said substrate, said first ridge mesa being covered on top with an active layer and provided at both lateral edges with current blocking layers of p-n reverse junction semiconductors arranged along the active layer for confining injection currents, and a second ridge mesa formed at least by said first ridge mesa and said current blocking layers and provided at both lateral edges with a semi-insulating layer.
Claim 3
Dependent Claim 27 words
A buried-type semiconductor laser device according to claim 1, wherein said active layer has a bulk structure, a quantum well structure or a strained quantum well structure.
Claim 4
Dependent Claim 25 words
A buried-type semiconductor laser device according to claim 1, wherein said active layer formed on said first ridge mesa is covered with a clad layer.
Claim 5
Dependent Claim 30 words
A buried-type semiconductor laser device according to claim 1, wherein said second ridge mesa formed by said first ridge mesa and said current blocking layers comprises clad and contact layers.
Claim 6
Dependent Claim 20 words
A buried-type semiconductor laser device according to claim 1, wherein said current blocking layers are made of n-InP and p-InP.
Claim 7
Dependent Claim 32 words
A buried-type semiconductor laser device according to claim 1, wherein said semi-insulating layer is made of Fe-doped InP and covered with an InP layer or the semi-insulating layer is made of polyimide.
Claim 8
Dependent Claim 19 words
A buried-type semiconductor laser device according to claim 5, wherein an InP layer is formed on said semi-insulating layer.

References Cited (Backward Citations)

JPS58111388A Cited
JPS6092684A Cited
US4984244A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-06-27 1997-12-27 1998-06-28 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-06-27 2001-12-27 2002-06-28 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-06-27 2005-12-27 2006-06-28 $7700.00 Window Closed / Lapsed

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