US5325385A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Buried-type semiconductor laser device
Assignee: Furukawa Electric Co Ltd
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Filing: 1992-12-17
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Granted: 1994-06-28
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Expires: 2012-12-17
Abstract
Abstract This invention provides a buried-type semiconductor laser device that operates stably and reliably at a high temperature for a prolonged period of time. A buried-type semiconductor laser device according to the invention comprises a semiconductor substrate 2, a first ridge mesa 8 formed on said substrate 2, said first ridge mesa 8 being covered on the top with at least an active layer 4 and provided at both lateral edges with current blocking layers 9, 10 of p-n reverse junction semiconductors arranged along the active layer for confining electric currents, and a second ridge mesa 11 formed by said first ridge mesa 8 and said current blocking layers 9, 10 and provided at both lateral edges with a semi-insulating layer 13.
Inventors
- 👤 Akihiko Kasukawa
- 👤 Toshio Kikuta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 22:46
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/2275; H01S5/30; H01S5/32; H01S5/323; H01S5/3235; H01S5/32391
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
82 words
In a buried-type semiconductor laser device comprising a semiconductor substrate, a first ridge mesa formed on said substrate, said first ridge mesa being covered on top with an active layer and provided at both lateral edges with current blocking layers of p-n reverse junction semiconductors arranged along the active layer for confining injection currents, and a second ridge mesa formed at least by said first ridge mesa and said current blocking layers and provided at both lateral edges with a semi-insulating layer.
Claim 2
Dependent Claim
82 words
In a buried-type semiconductor laser device comprising a semiconductor substrate, a first ridge mesa formed on said substrate, said first ridge mesa being covered on top with an active layer and provided at both lateral edges with current blocking layers of p-n reverse junction semiconductors arranged along the active layer for confining injection currents, and a second ridge mesa formed at least by said first ridge mesa and said current blocking layers and provided at both lateral edges with a semi-insulating layer.
Claim 3
Dependent Claim
27 words
A buried-type semiconductor laser device according to claim 1, wherein said active layer has a bulk structure, a quantum well structure or a strained quantum well structure.
Claim 4
Dependent Claim
25 words
A buried-type semiconductor laser device according to claim 1, wherein said active layer formed on said first ridge mesa is covered with a clad layer.
Claim 5
Dependent Claim
30 words
A buried-type semiconductor laser device according to claim 1, wherein said second ridge mesa formed by said first ridge mesa and said current blocking layers comprises clad and contact layers.
Claim 6
Dependent Claim
20 words
A buried-type semiconductor laser device according to claim 1, wherein said current blocking layers are made of n-InP and p-InP.
Claim 7
Dependent Claim
32 words
A buried-type semiconductor laser device according to claim 1, wherein said semi-insulating layer is made of Fe-doped InP and covered with an InP layer or the semi-insulating layer is made of polyimide.
Claim 8
Dependent Claim
19 words
A buried-type semiconductor laser device according to claim 5, wherein an InP layer is formed on said semi-insulating layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-27 | 1997-12-27 | 1998-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-27 | 2001-12-27 | 2002-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-27 | 2005-12-27 | 2006-06-28 | $7700.00 | Window Closed / Lapsed |