US5324965A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Light emitting diode with electro-chemically etched porous silicon
Assignee: United States Department of the Army
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Filing: 1993-03-26
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Granted: 1994-06-28
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Expires: 2013-03-26
Abstract
Abstract A light emitting diode comprising microporous silicon of one conductivity type forming a PN junction with silicon of the opposite conductivity type and electrodes respectively connected to said regions, at least one of the electrodes being transparent.
Inventors
- 👤 Michael F. Tompsett
- 👤 Raphael Tsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 00:31
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/831; H10H20/81; H10H20/822; H10H20/826; H10H20/8264; H10H20/01; H10H20/032; H10H20/832; H10H20/833
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
67 words
A light emitting diode comprising: a first region of microporous silicon of one conductivity type; a second region of silicon of an opposite conductivity type, the second region being in electrical contact with said first region of microporous silicon; at least two electrodes electrically connected to said first and second regions; and a silicon substrate wherein said first and second regions are disposed within said silicon substrate.
Claim 2
Dependent Claim
67 words
A light emitting diode comprising: a first region of microporous silicon of one conductivity type; a second region of silicon of an opposite conductivity type, the second region being in electrical contact with said first region of microporous silicon; at least two electrodes electrically connected to said first and second regions; and a silicon substrate wherein said first and second regions are disposed within said silicon substrate.
Claim 3
Dependent Claim
25 words
A light emitting diode as set forth in claim 1 wherein said first and second regions are laterally disposed on a surface of the substrate.
Claim 4
Dependent Claim
25 words
A light emitting diode as set forth in claim 1 wherein said first and second regions are transversely disposed on a surface of said substrate.
Claim 5
Dependent Claim
30 words
A light emitting diode as set forth in claim 1 wherein said first region is of the P conductivity type and said second region is of the N conductivity type.
Claim 6
Dependent Claim
30 words
A light emitting diode as set forth in claim 1 wherein said first region is of the N conductivity type and said second region is of the P conductivity type.
Claim 7
Dependent Claim
101 words
A light emitting diode integrally incorporated in a silicon substrate of a first conductivity type comprising: a microporous region of the first conductivity type of the silicon substrate, the microporous region being formed by electrochemical etching and doping in a first surface of said substrate; a doped region of said silicon substrate being of a second conductivity type formed in contact with said microporous region, said doped region being formed by doping a first surface of said substrate; a first electrode conductively connected to said microporous region; and a second electrode conductively connected to said region of said second conductivity type.
Claim 8
Dependent Claim
101 words
A light emitting diode integrally incorporated in a silicon substrate of a first conductivity type comprising: a microporous region of the first conductivity type of the silicon substrate, the microporous region being formed by electrochemical etching and doping in a first surface of said substrate; a doped region of said silicon substrate being of a second conductivity type formed in contact with said microporous region, said doped region being formed by doping a first surface of said substrate; a first electrode conductively connected to said microporous region; and a second electrode conductively connected to said region of said second conductivity type.
Claim 9
Dependent Claim
16 words
A light emitting diode as set forth in claim 6 wherein said first electrode is transparent.
Claim 10
Dependent Claim
20 words
A light emitting diode as set forth in claim 6 wherein said first electrode is made of indium, tin oxide.
Claim 11
Dependent Claim
20 words
A light emitting diode as set forth in claim 6 wherein said region of the second conductivity type is annular.
Claim 12
Dependent Claim
30 words
A light emitting diode as set forth in claim 6 wherein: said first conductivity type is P and said second conductivity type is N+; and said first electrode is transparent.
Claim 13
Dependent Claim
29 words
A light emitting diode as set forth in claim 6 wherein said first conductivity type is N, said second conductivity type is P+ and said second electrode is transparent.
References Cited (Backward Citations)
US4801380A
Cited
US5206523A
Cited
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