Structure formed by a method of patterning a submicron semiconductor layer

Claim 2

An integrated circuit structure, comprising: a conductive region in a semiconductor substrate; an undoped oxide layer over the substrate and the conductive region; a doped oxide layer over the undoped oxide layer; an etch stop layer over the doped oxide layer; and an opening through the etch stop layer, the doped oxide layer, and the undoped oxide layer to expose a portion of the conductive region.

Claim 3

The structure of claim 1, further comprising a conductive interconnect structure over the etch stop layer and extending into the opening to contact the conductive region.

Claim 4

The structure of claim 1, wherein the etch stop layer is tantalum disilicide.

Claim 5

The structure of claim 1, wherein the etch stop layer is titanium nitride.

Claim 6

An intermediate structure utilized in the formation of an integrated circuit device, comprising: a semiconductor substrate; a first plurality of conductive structures formed in the substrate; a second plurality of conductive structures formed over the substrate; a first interlevel dielectric layer of undoped oxide over the substrate and the second plurality of conductive structures, wherein the first interlevel dielectric layer has an uneven topography; a second interlevel dielectric layer of doped oxide over the first interlevel dielectric layer, wherein the second interlevel dielectric layer conforms to the topography of the first interlevel dielectric layer, thereby having an uneven topography; an etch stop layer over the second interlevel dielectric layer, wherein the etch stop layer conforms to the topography of the second interlevel dielectric layer, thereby also having an uneven topography; a planarizing layer over the etch stop layer, the planarizing layer having a substantially planar upper surface; and photoresist layer over the planarizing layer.

Claim 7

An intermediate structure utilized in the formation of an integrated circuit device, comprising: a semiconductor substrate; a first plurality of conductive structures formed in the substrate; a second plurality of conductive structures formed over the substrate; a first interlevel dielectric layer of undoped oxide over the substrate and the second plurality of conductive structures, wherein the first interlevel dielectric layer has an uneven topography; a second interlevel dielectric layer of doped oxide over the first interlevel dielectric layer, wherein the second interlevel dielectric layer conforms to the topography of the first interlevel dielectric layer, thereby having an uneven topography; an etch stop layer over the second interlevel dielectric layer, wherein the etch stop layer conforms to the topography of the second interlevel dielectric layer, thereby also having an uneven topography; a planarizing layer over the etch stop layer, the planarizing layer having a substantially planar upper surface; and photoresist layer over the planarizing layer.

Claim 8

The structure of claim 5, wherein the etch stop layer is tantalum disilicide.

Claim 9

The structure of claim 5, wherein the etch stop layer is titanium nitride.

Claim 10

The structure of claim 5, further comprising a plurality of openings through the photoresist and planarizing layers to expose portions of the etch stop layer.

Claim 11

The structure of claim 8, further comprising a plurality of openings in the etch sop layer coinciding with the openings through the photoresist and planarizing layers, and exposing portions of the second interlevel dielectric layer therethrough.